Correlated development of a (2 × 2) reconstruction and a charge accumulation layer on the InAs(111)–Bi surface

Szamota-Leandersson, Karolina; Leandersson, M.; Göthelid, Mats; Karlsson, Ulf O.

doi:10.1016/j.susc.2010.09.015

Cited by 9 publications

(26 citation statements)

References 27 publications

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“…Pristine InAs(1 1 1) surfaces While a (2×2) LEED pattern is observed for InAs(1 1 1)A (figure 1(a)), the InAs(1 1 1)B surface is unreconstructed (not shown); this is due to charge transfer between the outermost layers [30]-which also explains the »250 meV shift towards the high binding energy (BE) side of the main peak of the In4d PES spectrum for the A side with respect to the B side-and/or the presence of In vacancies on the In-terminated A surface (see [31][32][33], and the references therein). The In4d PES spectra for both the A side and the B side of InAs(1 1 1) are in agreement with those reported previously [21,34,35]. They are given in figure 2 to help comparison with those of the Bi-covered substrates in the following discussion.…”

Section: Resultssupporting

confidence: 86%

“…One can also note that the intensity of the surface (S) component is larger for the In-terminated A side than for the B side. The energy shift between the surface and bulk components is found to be 0.3 eV for the A side, in good agreement with [34], and to be 0.26 eV for the B side [21].…”

Section: Resultssupporting

confidence: 70%

“…We report here on a study of the electronic structure of Bi films deposited on both A (In-terminated) and B (As-terminated) faces of InAs(1 1 1). Although some results on the growth of Bi on InAs(1 1 1)B have been reported in the past [21], the Bi/InAs(1 1 1)A interface has not yet been investigated to our knowledge.…”

Section: Introductionmentioning

confidence: 99%

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Bi ultra-thin crystalline films on InAs(1 1 1)A and B substrates: a combined core-level and valence-band angle-resolved and dichroic photoemission study

et al. 2019

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The growth of Bi on both the In-terminated (A) face and the As-terminated (B)face of InAs(1 1 1) has been investigated by low-energy electron diffraction, scanning tunnelling microscopy, and photoelectron spectroscopy using synchrotron radiation. The changes upon Bi deposition of the In4d and Bi 5d 5/2 photoelectron signals allow to get a comprehensive picture of the Bi/InAs(1 1 1) interface. From the early stage the Bi growth on the A face is epitaxial, contrary to that on the B face that proceeds via the formation of islands. Angle-resolved photoelectron spectra show that the electronic structure of a Bi deposit of ≈10 bi-layers on the A face is identical to that of bulkBi, while more than≈30 bi-layers are needed for the B face. Both bulk and surface electronic states observed are well accounted for by fully relativistic ab initio calculations performed using the one-step model of photoemission. These calculations are used to analyse the dichroic photoemission data recorded in the vicinity of the Fermi level around the G point of the Brillouin zone.

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Section: Resultssupporting

confidence: 86%

Section: Resultssupporting

confidence: 70%

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Bi ultra-thin crystalline films on InAs(1 1 1)A and B substrates: a combined core-level and valence-band angle-resolved and dichroic photoemission study

et al. 2019

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“…In contrast to the results reported by Szamota-Leanderson et al, 16 we have not obtained any charge accumulation layer on Bi/InAs(111)B-(2 Â 2) surface for T 4 and H 3 sites. In addition to these structures, we have also tested the case of T 4 -H 3 site.…”

Section: Discussioncontrasting

confidence: 99%

“…14 Szamota-Leandersson et al 15 have observed a charge accumulation layer on the well-ordered InAs(100)-(2 Â 6)/c(2 Â 12) surface, however, not on the poorly ordered layer. In a recent work, 16 they have investigated the Bi-covered InAs(111)B-(2 Â 2) surface using synchrotron radiation photoelectron spectroscopy and LEED techniques. They reported that the Bi layers induce states located at the bottom of the InAs conduction band due to a charge accumulation layer, and also they have suggested that Bi/InAs(111)B-(2 Â 2) surface is characterized by the Bi trimer model.…”

Section: Introductionmentioning

confidence: 99%

Theoretical investigation of charge accumulation layer on the Bi-induced InAs(111)-(2 × 2) surface

Özkaya

Usanmaz

Çakmak

et al. 2014

Journal of Applied Physics

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Based on pseudopotential method and density functional theory, we have investigated the stability, atomic geometry, and detailed electronic structures for Bi adsorbates on the InAs(111)-(2 Â 2) surface with three different sites: (i) T 4 (Bi trimer centered on T 4 site), (ii) H 3 (Bi trimer centered on H 3 site), and (iii) T 4 -H 3 (which is formed by trimers with opposite orientations: one centered on a T 4 site and the other on a H 3 ). Our total energy calculations suggest that adsorption on the T 4 -H 3 site is the energetically most stable structure among the proposed structures. The electronic band structure calculations reveal the existence of an accumulation layer between InAs(111) surface and Bi adatoms for T 4 -H 3 . Charge density difference results indicate significant amount of the charge accumulation on the Bi/InAs interface. V C 2014 AIP Publishing LLC. [http://dx.

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Structure of Strained Low‐Dimensional Sb by In Situ Surface X‐Ray Diffraction

Mousley

Burrows

Nicklin

et al. 2022

Physica Status Solidi (b)

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Antimony ultrathin films in tensile strain are grown on InAs(111)B substrates and studied in situ using surface X‐ray diffraction. The detailed atomic structures of two highly crystalline Sb(0001) films are derived, with thicknesses of 19 and 4 bilayers. Features considered in structural modeling include interfacial intermixing, surface roughness, individual layer relaxations, and rotational twin domains (RTDs). The four‐bilayer film shows significant structural relaxation in every layer, while both films include RTDs. The results are discussed in relation to the topological properties of low‐dimensional Sb.

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Correlated development of a (2 × 2) reconstruction and a charge accumulation layer on the InAs(111)–Bi surface

Cited by 9 publications

References 27 publications

Bi ultra-thin crystalline films on InAs(1 1 1)A and B substrates: a combined core-level and valence-band angle-resolved and dichroic photoemission study

Bi ultra-thin crystalline films on InAs(1 1 1)A and B substrates: a combined core-level and valence-band angle-resolved and dichroic photoemission study

Theoretical investigation of charge accumulation layer on the Bi-induced InAs(111)-(2 × 2) surface

Structure of Strained Low‐Dimensional Sb by In Situ Surface X‐Ray Diffraction

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