Correlated evolution of barrier capacitance charging, generation, and drift currents and of carrier lifetime in Si structures during 25 MeV neutrons irradiation

Gaubas, E.; Čeponis, T.; Jasiunas, A.; Uleckas, A.; Cortina, E.; Militaru, O.

doi:10.1063/1.4769370

Cited by 9 publications

(11 citation statements)

References 9 publications

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“…The creation of radiation defects was controlled by in situ measurements [4] of variations of the BELIV transients during irradiation by spallator neutrons. The evolution of BELIV transients is illustrated in Fig.…”

Section: Resultsmentioning

confidence: 99%

“…Particle detectors based on Si pin structure are commonly employed in high energy particle experiments for rapid and reliable detection of high energy particles [1,2]. However, large density of radiation induced defects acting as carrier traps affect the detector functional parameters by reducing the charge collection efficiency [1,2], increasing the leakage current [1][2][3], and consequently modifying the pulsed transient waveforms [1][2][3][4]. This necessitates a deeper study of peculiarities of carrier recombination channels attributed to radiation defects of large density.…”

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

Spectroscopy of radiation traps by temperature dependent photoconductivity and generation currents in Si

Gaubas¹,

Čeponis²,

Pavlov³

et al. 2014

Lith. J. Phys.

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An analysis of excess carrier decay transients has been performed on the reactor neutron irradiated Si n-type material grown by the magnetic field applied Czochralski (MCZ) technology, using the microwave-probed photoconductivity (MW-PC) transient technique. The measurements of temperature dependent excess carrier lifetime variations were carried out on the just irradiated and annealed samples in order to identify the prevailing radiation defects and to predict trap behaviour under thermal treatments. The activation energy of the dominant carrier traps has been extracted. Barrier capacitance and generation current variations in neutron irradiated MCZ Si pin diodes have been controlled employing the barrier evaluation by the linearly increasing voltage (BELIV) technique, as well.

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Section: Resultsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Spectroscopy of radiation traps by temperature dependent photoconductivity and generation currents in Si

Gaubas¹,

Čeponis²,

Pavlov³

et al. 2014

Lith. J. Phys.

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“…The electrical ( U r = 150V) and optical ( n ex0 ) parameters were carefully controlled to be fixed within measurements. The sample was kept in air just behind the neutron beam cone, while other experiment details are published in [ 14 , 28 ]. Evolution of the current transients is illustrated in Figure 5b , where currents had been controlled starting from that registered in the non-irradiated diode up to exposure duration for which the collected irradiation fluence reaches value of > 10 14 n/cm 2 .…”

Section: Discussionmentioning

confidence: 99%

Currents Induced by Injected Charge in Junction Detectors

Gaubas

Čeponis

Kalesinskas

2013

Sensors

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The problem of drifting charge-induced currents is considered in order to predict the pulsed operational characteristics in photo- and particle-detectors with a junction controlled active area. The direct analysis of the field changes induced by drifting charge in the abrupt junction devices with a plane-parallel geometry of finite area electrodes is presented. The problem is solved using the one-dimensional approach. The models of the formation of the induced pulsed currents have been analyzed for the regimes of partial and full depletion. The obtained solutions for the current density contain expressions of a velocity field dependence on the applied voltage, location of the injected surface charge domain and carrier capture parameters. The drift component of this current coincides with Ramo's expression. It has been illustrated, that the synchronous action of carrier drift, trapping, generation and diffusion can lead to a vast variety of possible current pulse waveforms. Experimental illustrations of the current pulse variations determined by either the rather small or large carrier density within the photo-injected charge domain are presented, based on a study of Si detectors.

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“…There, BELIV transients were recorded using fixed reverse (UR) voltage pulses with a peak value of UP=8 V and pulse duration of τP=50 µs. The initial current peak within a BELIV transient, which appeared due to barrier capacitance charging, corresponds to the barrier capacitance value Cb0, which is dependent on the effective doping concentration ~Neff 1/2 [14]. As shown in Fig.…”

Section: Beliv Characteristics Of Pristine Sensorsmentioning

confidence: 96%

CHARACTERISTICS OF 1.6 MeV PROTON-IRRADIATED GaN-BASED SENSORS

Meškauskaite¹,

Gaubas²,

Čeponis³

et al. 2017

RadJ

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Abstract. High response speed sensors made of thin GaN-based structures can be important for the optical readout of the radiation signals in harsh radiation environment at hadron accelerator facilities. In this work, the metalsemiconductor-metal structure sensors formed on the MOCVD grown GaN heterostructures have been studied. The proton-induced luminescence (PI-L) and the BELIV (barrier evaluation by linearly increasing voltage) transients have simultaneously been recorded during 1.6 MeV proton irradiation emitted by a Tandetron type accelerator. The PI-L and BELIV measurements allowed for tracing the evolution of the parameters of recombination. The radiation damage on GaN-based sensors has been examined by capacitance-voltage (C-V) and deep-level transient spectroscopy (DLTS) methods. The dominant radiation defects introduced by 1.6 MeV proton beam have been unveiled.

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Correlated evolution of barrier capacitance charging, generation, and drift currents and of carrier lifetime in Si structures during 25 MeV neutrons irradiation

Cited by 9 publications

References 9 publications

Spectroscopy of radiation traps by temperature dependent photoconductivity and generation currents in Si

Spectroscopy of radiation traps by temperature dependent photoconductivity and generation currents in Si

Currents Induced by Injected Charge in Junction Detectors

CHARACTERISTICS OF 1.6 MeV PROTON-IRRADIATED GaN-BASED SENSORS

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