Correlated Kelvin-probe force microscopy, micro-FTIR and micro-Raman analysis of doping anisotropy in multisectorial boron-doped HPHT diamonds

Nikolenko, A. D.; Strelchuk, V. V.; Lytvyn, P. M.; Danylenko, I. M.; Malyuta, S.V.; Gontar, A.G.; Starik, Sergii; Kovalenko, T.V.; Ivakhnenko, Sergey

doi:10.1016/j.diamond.2022.108927

Cited by 9 publications

(4 citation statements)

References 39 publications

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“…Figure 2 shows an example of temperature-dependent Raman spectra obtained for the {111} growth sector of BDD (sample I). All the spectra demonstrate domination of narrow first-order diamond's F 2g Raman peak at ∼1333 cm −1 and less intensive boron-induced peaks near ∼588, 920, 1046, 1380, and 1480 cm −1 [6,7,14]. To accurately compare the results obtained for different growth sectors, the Voigt function (the mixture of Lorentzian and Gaussian components) fit with the response function of the instrument was used to extract the Raman line position and FWHM of the F 2g phonon peak.…”

Section: Resultsmentioning

confidence: 93%

“…Single crystals of BDD exhibiting a cubo-octahedral habit were synthesized using the temperature gradient method under HPHT conditions (Р = 6.5 GPa and T = 1380 • C-1420 • C) in the Fe-Al-B-C system. This approach allows for the controlled growth of BDD with a concentration of uncompensated boron impurities [N a -N d ] in the range of approximately 2 × 10 −4 -2 × 10 −2 at.%, as verified by infrared (IR) absorption measurements [6,7]. Utilizing digital micro-photogrammetry method [32], 3D scans of the synthesized BDD single crystals were obtained.…”

Section: Methodsmentioning

confidence: 99%

“…On the other hand, we know that for the fabrication of microelectronic devices, for example, Schottky diodes, the presence of substitutional boron and its inhomogeneous concentration within the crystal is essential. Our analysis of doping anisotropy in multisectorial boron-doped HPHT diamonds showed that growth-sector-dependent boron content gradually decreased in a sequence {111} → {110} → {113} → {001} [6,7].…”

Section: Introductionmentioning

confidence: 95%

“…The boron-doped diamond (BDD) crystals herewith can show changes in morphology from cubic to cube-octahedron to octahedron as the crystal grows larger and the crystal extends into the higher temperature region. Using boron precursor in the Fe-Al-B-C system allows HPHTsynthesis of cube-octahedral BDD crystals with growth sectors such as {001}, {113}, and {111} [6]. It is therefore expected that growth sectors, namely, regions in the cube-octahedron diamond crystal, typically develop outward from the seed, which was emplaced by the growth of a single, specific crystal face, for instance {111}, the octahedral face.…”

Section: Introductionmentioning

confidence: 99%

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Temperature dependence of growth-sector-dependent Raman spectra of boron-doped diamonds synthesized at high-pressure high-temperature

Nikolenko,

Strelchuk,

Danylenko

et al. 2023

J. Phys.: Condens. Matter

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Single crystals of boron-doped diamond (BDD) were synthesized by the temperature gradient method in high-pressure and high-temperature conditions (HPHT) in the Fe-Al-B-C system, and multisectoral diamond plates were extracted. Temperature-dependent (77-600 K) high-resolution Raman spectroscopic studies have been carried out to investigate the behavior of anharmonic phonon decay in the {001}, {113}, and {111} growth sectors of multisectoral diamond plates with different content of boron impurities (≤80 ppm) and compare with the data for undoped IIa diamond. Micro-Fourier transform infrared (FTIR) spectroscopy was used to estimate the spatial distribution of uncompensated boron impurity [Na-Nd] in BDD plates by analyzing boron-related absorption peaks. The plates were shown to have non-uniform growth-sector-dependent content of uncompensated boron impurity in the range from 1.1 × 1018 to 1.4 × 1019 cm-3. The effects of anharmonic decay (damping) of optical phonons in BDD are studied by modeling the temperature dependence of phonon frequency and linewidth of the diamond’s F2g and boron-induced vibrational modes. The extrapolated zero-temperature optical phonon linewidth and frequency and the anharmonic nature of their linear relationship are determined as a function of the growth sector and boron doping. The predominant mechanisms and parameters of the anharmonic decay of optical phonons are determined, which is of fundamental importance for the thermal conductivity of semiconductor materials. The anharmonic phonon decay remained the predominant process at higher temperatures, irrespective of the doping level.

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Section: Resultsmentioning

confidence: 93%