Correlated TKD/EDS - TEM - APT analysis on selected interfaces of CoSi2 thin films

Zschiesche, Hannes; Campos, Andréa; Dominici, Christian; Roussel, Luc; Charaı̈, A.; Mangelinck, Dominique; Alfonso, Claude

doi:10.1016/j.ultramic.2019.06.007

Cited by 4 publications

(3 citation statements)

References 51 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…There is a white dividing line in the middle of CoSi 2 films, which is the original interface of Si substrate. The formation mechanism is due to the mutual diffusion of Co and Si atoms during the formation of silicide, which leads to a part of silicide below the Si substrate interface and another part above the Si substrate interface [27]. And as shown in figure 7(b), the element composition analysis of CoSi 2 film shows that the content ratio of Co to Si is about 1: 2.8, indicating that the silicide after RTA2 is not pure CoSi 2 phase, but also contains a small amount of CoSi phase [28].…”

Section: Resultsmentioning

confidence: 99%

Effects of cobalt deposition and pretreatment process on electrical properties of products

Xu¹,

Miao²,

Zhang³

2021

Eng. Res. Express

View full text Add to dashboard Cite

The preferable conditions for formation of high quality CoSi2 films and effect of process parameters on properties of products were investigated. The pretreatment should not only remove the natural oxide layer completely, but also could not damage Si substrate. The good static random access memory (SRAM) proportion of products is high when pretreatment thickness is 20 Å, reached 96.5%. The radio frequency (RF) bias power process parameter should also take an optimal value. When RF bias power is 150 W, the good SRAM proportion of products is greater than 98%. The 100 Å Co can just completely react with Si substrate after twice annealing (500 °C 30 s and 750 °C 30 s), and if it exceeds 100 Å, Co will be residual. Decreasing Co thickness leads to contact resistance (RC) increase whatever in N-well or P-well. The overall standby current (Isb) of product is least when Co thickness is 80 Å. Finally, the products achieved good electrical properties when Co thickness is 80 Å, pretreatment thickness is 20 Å and RF bias power is 150 W.

show abstract

Section: Resultsmentioning

confidence: 99%

Effects of cobalt deposition and pretreatment process on electrical properties of products

Xu¹,

Miao²,

Zhang³

2021

Eng. Res. Express

View full text Add to dashboard Cite

show abstract

“…The artifacts caused by these assumptions can be minimized if some prior knowledge of the sample is provided. Reconstruction parameters are dynamically optimized to match the reconstructed results according to the known features of the sample, such as its geometrical morphology acquired from imaging techniques like transmission electron microscopy (TEM) or SEM, the distance between lattice planes, the shank angle, the tip radius (Gault et al, 2009, 2011; Larson et al, 2012, 2013; Lefebvre et al, 2015; Hatzoglou et al, 2019; Zschiesche et al, 2019), and clusters or grain boundaries (Mouton et al, 2017; Baik et al, 2018; Kolli, 2018). Corrections to the local magnification are also exploited to eliminate trajectory aberrations that cause low-density poles on the hit maps (Larson et al, 2011).…”

Section: Introductionmentioning

confidence: 99%

A Bottom-Up Volume Reconstruction Method for Atom Probe Tomography

Yang

Cools

Bogdanowicz

et al. 2022

Microscopy and Microanalysis

View full text Add to dashboard Cite

This paper describes a reconstruction method for atom probe tomography based on a bottom-up approach accounting for (i) the final tip morphology (which is frequently induced by inhomogeneous evaporation probabilities across the tip surface due to laser absorption, heat diffusion effects, and inhomogeneous material properties), (ii) the limited (and changing) field of view, and (iii) the detector efficiency. The reconstruction starts from the final tip morphology and reverses the evaporation sequence through the pseudo-deposition of defined small reconstruction volumes, which are then stacked together to create the full three-dimensional (3D) tip. The subdivision in small reconstruction volumes allows the scheme to account for the changing tip shape and field of view as evaporation proceeds. Atoms within the same small reconstruction volume are reconstructed at once by placing atoms back onto their possible lattice sites through a trajectory-matching process involving simulated and experimental hit maps. As the ejected ion trajectories are simulated using detailed electrostatic modeling inside the chamber, no simplifications have been imposed on the shape of the trajectories, projection laws, or tip surface. We demonstrate the superior performance of our approach over the conventional reconstruction method (Bas) for an asymmetrical tip shape.

show abstract

“…In the present work, we demonstrate a simple and effective method of rectangular milling using LGIS‐FIB instrument for preparing needle shaped APT specimens from Al alloys at room temperature that significantly reduced the damage caused by Ga + ions and yielded accurate compositions with Ga content <0.1 at% in the matrix and at hetero‐phase interfaces. Earlier, the rectangular milling method was used for correlative transmission Kikuchi diffraction (TKD) and APT (Baik et al, 2018; Zschiesche et al, 2019) of metallic alloys.…”

Section: Introductionmentioning

confidence: 99%

On the fabrication of atom probe tomography specimens of Al alloys at room temperature using focused ion beam milling with liquid Ga ion source

Mondal

Bansal

Makineni

2022

Microscopy Res & Technique

View full text Add to dashboard Cite

In this work, a simple rectangular milling technique was demonstrated to prepare needle shape atom probe tomography (APT) specimens from Al alloys by focusedion-beam (FIB) milling using Ga + ions at room temperature. Ga has high miscibility in Al owing to which electropolishing technique is preferred over Ga + ion FIB instruments for the fabrication of APT specimens. Although, site specific sample preparation is not possible by the electropolishing technique. This led to the motivation to demonstrate a new rectangular milling technique using Ga + FIB instrument that resulted a significant reduction of Ga + ion impregnation into the specimens. This is attributed to the reduction of milling time (<30 s at 30 kV acceleration voltage) and the use of lower currents (<0.3 nA) compared to the conventional annular milling method. The yield of specimens during field evaporation in APT was also significantly increased from around 8 million ions to more than 86 million ions due to the avoidance of Ga + ion embrittlement. Therefore, the currently demonstrated rectangular milling technique can be used to prepare APT specimens from Al-alloys and obtained accurate compositions of matrix, phases, and hetero-phase interfaces with Ga < 0.1 at%.

show abstract

Correlated TKD/EDS - TEM - APT analysis on selected interfaces of CoSi2 thin films

Cited by 4 publications

References 51 publications

Effects of cobalt deposition and pretreatment process on electrical properties of products

Effects of cobalt deposition and pretreatment process on electrical properties of products

A Bottom-Up Volume Reconstruction Method for Atom Probe Tomography

On the fabrication of atom probe tomography specimens of Al alloys at room temperature using focused ion beam milling with liquid Ga ion source

Contact Info

Product

Resources

About