To improve the constraints of kesterite
Cu
2
ZnSnS
4
(CZTS) solar cell, such as undesirable
band alignment at
p–n interfaces, bandgap tuning, and fast carrier recombination,
cadmium (Cd) is introduced into CZTS nanocrystals forming Cu
2
Zn
1–
x
Cd
x
SnS
4
through cost-effective solution-based method
without postannealing or sulfurization treatments. A synergetic experimental–theoretical
approach was employed to characterize and assess the optoelectronic
properties of Cu
2
Zn
1–
x
Cd
x
SnS
4
materials. Tunable
direct band gap energy ranging from 1.51 to 1.03 eV with high absorption
coefficient was demonstrated for the Cu
2
Zn
1–
x
Cd
x
SnS
4
nanocrystals
with changing Zn/Cd ratio. Such bandgap engineering in Cu
2
Zn
1–
x
Cd
x
SnS
4
helps in effective carrier separation at interface.
Ultrafast spectroscopy reveals a longer lifetime and efficient separation
of photoexcited charge carriers in Cu
2
CdSnS
4
(CCTS) nanocrystals compared to that of CZTS. We found that there
exists a type-II staggered band alignment at the CZTS (CCTS)/CdS interface,
from cyclic voltammetric (CV) measurements, corroborated by first-principles
density functional theory (DFT) calculations, predicting smaller conduction
band offset (CBO) at the CCTS/CdS interface as compared to the CZTS/CdS
interface. These results point toward efficient separation of photoexcited
carriers across the p–n junction in the ultrafast time scale
and highlight a route to improve device performances.