2014
DOI: 10.1063/1.4885424
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Correlating defect induced ferromagnetism and gas sensing properties of undoped tin oxide sensors

Abstract: Influence of oxygen level on structure and ferromagnetism in Sn 0.95 Fe 0.05 O 2 nanoparticles

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Cited by 34 publications
(5 citation statements)
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“…This is also in agreement with a previous report where the lattice expands in oxide particles . The increase in the lattice parameter with a decreasing particle size may result from the oxygen vacancy associated with particles. , Actually, the room-temperature ferromagnetism has been observed previously in nonmagnetic metal oxide particles such as CeO 2 , Al 2 O 3 , ZnO, In 2 O 3 , SnO 2 , etc., originating from the oxygen vacancies on the particle surface due to exchange interactions among localized electron spin moments, and the electrons trapped in oxygen vacancies ( F center) are polarized to give room-temperature ferromagnetism . The oxygen defects of ZGGO particles obtained in NaCl can be determined from the XPS spectra for the O 1s signal (Figure S15).…”
Section: Resultsmentioning
confidence: 99%
“…This is also in agreement with a previous report where the lattice expands in oxide particles . The increase in the lattice parameter with a decreasing particle size may result from the oxygen vacancy associated with particles. , Actually, the room-temperature ferromagnetism has been observed previously in nonmagnetic metal oxide particles such as CeO 2 , Al 2 O 3 , ZnO, In 2 O 3 , SnO 2 , etc., originating from the oxygen vacancies on the particle surface due to exchange interactions among localized electron spin moments, and the electrons trapped in oxygen vacancies ( F center) are polarized to give room-temperature ferromagnetism . The oxygen defects of ZGGO particles obtained in NaCl can be determined from the XPS spectra for the O 1s signal (Figure S15).…”
Section: Resultsmentioning
confidence: 99%
“…Even now, the room temperature ferromagnetic property has been experimentally observed in many oxide based DMSs [3][4][5][6][7]. Tin dioxide is a wide band gap semiconductor with many applications like optoelectronic devices, sensor, catalyst, solar cell [8][9][10][11][12]. Like ZnO, TiO 2 and Fe 3 O 4 , tin oxide is one of the most studied oxides.…”
Section: Introductionmentioning
confidence: 99%
“…However, both the gas sensing mechanism and the magnetization depend primarily on defects. It is well known that oxygen vacancies (V O ) play a vital role in the gas sensing mechanism, 25,26 and similarly, it is also understood that the presence of V O may lead to RTFM in MOS. Currently; there are only a few reports on the correlation between magnetism and sensing.…”
Section: Introductionmentioning
confidence: 99%