Correlation Between Bands Structure and Quantum Magneto Transport Properties in InAs/GaxIn1−xSb Type II Superlattice for Infrared Detection

Abstract

We have used the envelope function formalism to investigate the bands structure of LWIR type II SL InAs (d 1 = 2. 18d 2)/In 0.25 Ga 0.75 Sb(d 2 = 21.5 Å). Thus, we extracted optical and transport parameters as the band gap, cut off wavelength, carriers effective mass, Fermi level and the density of state. Our results show that the higher optical cutoff wavelength can be achieved with smaller layer thicknesses. The semiconductor-semi metal transition was studied as a function of temperature. Our results permit us the interpretations of Hall and Shubnikov-de Haas effects. These results are in agreement with experimental results in literature and a guide for engineering infrared detectors.

Acoustic velocity and phonon frequencies of GaxIn1−xSb alloys under pressure, temperature, and compositions

“…These materials are sensitive to external effects such as temperature, external fields, and pressure, in addition to the value of their physical characteristics which make them good candidates for sensors of several types [8]. Several experimental and theoretical works have been published on some of the properties of semiconductor alloys, but, no sufficient data is available for the acoustic velocity and phonon frequencies under pressure and temperature [8][9][10][11][12][13][14][15][16][17][18][19][20][21]. Insufficient methods have been developed to find out the semiconductor band structure, including the (EPM) [22][23][24][25][26][27][28].…”