Correlation between barrier height and interface structure of   Schottky diodes

Schmitsdorf, R. F.; Kampen, Thorsten U.; Mönch, Winfried

doi:10.1016/0039-6028(94)00791-8

Cited by 219 publications

(138 citation statements)

References 25 publications

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“…Schmitsdorf et al 42 used Tung's theoretical barrier inhomogeneity results to analyze the experimental data and found a linear correlation between the barrier height Φ b0 and the ideality factor n. As can be seen in Figure 5(a), there is a linear relationship between Φ b0 and n that agrees with the above-mentioned linear correlation. Extrapolating the experimental Φ b0 n plot to n = 1 gives a fundamental Φ b0 value of 1.01 V. Thus, one can conclude that the Φ b0 decrease and n increase are probably caused by barrier inhomogeneity.…”

confidence: 74%

Characterization of the inhomogeneous barrier distribution in a Pt/(100)β-Ga2O3 Schottky diode via its temperature-dependent electrical properties

Jian

et al. 2018

AIP Advances

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β-Ga2O3 is an ultra-wide bandgap semiconductor with applications in power electronic devices. Revealing the transport characteristics of β-Ga2O3 devices at various temperatures is important for improving device performance and reliability. In this study, we fabricated a Pt/β-Ga2O3 Schottky barrier diode with good performance characteristics, such as a low ON-resistance, high forward current, and a large rectification ratio. Its temperature-dependent current–voltage and capacitance–voltage characteristics were measured at various temperatures. The characteristic diode parameters were derived using thermionic emission theory. The ideality factor n was found to decrease from 2.57 to 1.16 while the zero-bias barrier height Φb0 increased from 0.47 V to 1.00 V when the temperature was increased from 125 K to 350 K. This was explained by the Gaussian distribution of barrier height inhomogeneity. The mean barrier height Φ¯b0 = 1.27 V and zero-bias standard deviation σ0 = 0.13 V were obtained. A modified Richardson plot gave a Richardson constant A* of 36.02 A·cm−2·K−2, which is close to the theoretical value of 41.11 A·cm−2·K−2. The differences between the barrier heights determined using the capacitance–voltage and current–voltage curves were also in line with the Gaussian distribution of barrier height inhomogeneity.

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confidence: 74%

Characterization of the inhomogeneous barrier distribution in a Pt/(100)β-Ga2O3 Schottky diode via its temperature-dependent electrical properties

Jian

et al. 2018

AIP Advances

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“…However, a linear correlation between both quantities was observed for Ag/S/n-GaAs(001) [14], Ag/n-Si(111)-"7×7", Ag/n-Si(111)-1×1 [15], Ag/n-Si(111):H-1×1 [16], Pb/H:p-Si(111) and Pb/n-Si(111) Schottky diodes [8]. Therefore, the barrier heights of all our Ag-and Pb/n-αGaN contacts are plotted in Figure 2 versus their ideality factors.…”

Section: Resultsmentioning

confidence: 99%

“…For the GaN samples used the respective ideality factor results as n if =1.01 [15] [16].The extrapolation of the least-squares fits in Figure 2 to this ideality factor gives zero-bias barrier heights of 0.82 eV and 0.73 eV for uniform Ag and Pb contacts, respectively. The two important parameters of the MIGS-and-electronegativity model are the CNL and the slope parameter.…”

Section: Discussionmentioning

confidence: 99%

Metal Contacts on a-GaN

Kampen¹,

Mönch²

1996

MRS Internet j. nitride semicond. res.

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The Schottky barrier heights of silver and lead contacts on n-type GaN (0001) epilayers were determined from current-voltage characteristics. The zero-bias barrier heights and the ideality factors were found to be linearly correlated. Similar observations were previously reported for metal contacts on Si (111) and GaAs (110) surfaces. The barrier heights of ideal Schottky contacts are characterized by image force lowering of the barrier only. This gives an ideality factor of 1.01. From our data we obtain barrier heights of 0.82 eV and 0.73eV for ideal Ag and Pb contacts on GaN, respectively. The metal-induced gap states (MIGS) model predicts the barrier heights of ideal Schottky contacts on a given semiconductor to be linearly correlated with the electronegativities of the metals. The two important parameters of this MIGS-and-electronegativity model are the charge neutrality level (CNL) of the MIGS and a slope parameter. The CNL may be calculated from the dielectric band gap and using the empirical tight-binding method. The slope parameters are given by the optical dielectric constant of the respective semiconductor. The predictions of the MIGS model for metal/GaN contacts are confirmed by the results presented here and by barrier heights previously reported by others for Au, Ti, Pt, and Pd contacts on GaN.

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“…For ideal, abrupt metal-semiconductor interfaces an ideality factor of 1.01 is expected. 14 The larger values for the thin Cu/Si diode indicate a bias dependent barrier height 7 which may be due to a broad barrier height distribution, i.e., a laterally nonuniform interface. Since ideality factors larger than unity imply smaller Schottky barriers, 15 the measured barrier is lower than reported values of uniform Cu/Si and Cu 3 Si/Si interfaces which vary between 0.62 and 0.7 eV.…”

Section: A Current-voltage Measurementsmentioning

confidence: 99%

Ultrathin Cu films on Si(111): Schottky barrier formation and sensor applications

Nienhaus

Bergh

Gergen

et al. 1999

Journal of Vacuum Science &Amp; Technology A: Vacuum, Surfaces, and Films

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Ultrathin Cu films were evaporated on Si(111) surfaces at substrate temperatures of 175 K. By use of a microfabricated device structure, zero-force electrical contacts were formed on the thin Cu layers during evaporation. They allowed current/voltage measurements of diodes with Cu films between 40 and 60 Å . Although the rectifier properties are improved with increasing thickness, the 60 Å diode still exhibits a large inhomogeneous interface with a low barrier height of 0.47 eV and an ideality factor of 2.1. Annealing the diode to room temperature leads to significant changes in the barrier height which increases to 0.65 eV and the ideality factor which decreases to unity, suggesting a modification of the interface. The annealed thin-metal diodes may be used as atomic hydrogen sensors. A chemicurrent is observed in the diode when exposed to H atoms. The current is based on a nonadiabatic electron–hole pair creation which occurs during exothermic adsorption of hydrogen on Cu surfaces.

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Correlation between barrier height and interface structure of Schottky diodes

Cited by 219 publications

References 25 publications

Characterization of the inhomogeneous barrier distribution in a Pt/(100)β-Ga2O3 Schottky diode via its temperature-dependent electrical properties

Characterization of the inhomogeneous barrier distribution in a Pt/(100)β-Ga2O3 Schottky diode via its temperature-dependent electrical properties

Metal Contacts on a-GaN

Ultrathin Cu films on Si(111): Schottky barrier formation and sensor applications

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