2022
DOI: 10.1016/j.jpcs.2021.110409
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Correlation between carrier mobility and effective mass in Sr2RuO4–xFx (x = 2) under uniaxial strain using the Yukawa screened PBE0 hybrid functional

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Cited by 10 publications
(4 citation statements)
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“…It consists of alternating monolayers stacked along the c-axis, as is evident from its layered crystal structure (see figure 1). As expected, based on static calculations, the relaxed state parameters attained using the generalized gradient approximation (a = b = 3.84 Å; c = 12.78 Å) are congruent with earlier theoretical reports as well as experimental findings [21][22][23]. The electronic properties of Sr 2 RuO 4 along the high-symmetry direction were investigated through the equilibrium lattice parameters via the Yukawa screened hybrid functional and spin-orbit (SO) coupling.…”
Section: Geometric and Electronic Properties: Dftsupporting
confidence: 85%
“…It consists of alternating monolayers stacked along the c-axis, as is evident from its layered crystal structure (see figure 1). As expected, based on static calculations, the relaxed state parameters attained using the generalized gradient approximation (a = b = 3.84 Å; c = 12.78 Å) are congruent with earlier theoretical reports as well as experimental findings [21][22][23]. The electronic properties of Sr 2 RuO 4 along the high-symmetry direction were investigated through the equilibrium lattice parameters via the Yukawa screened hybrid functional and spin-orbit (SO) coupling.…”
Section: Geometric and Electronic Properties: Dftsupporting
confidence: 85%
“…Consequently, it is believed that the band dispersion in the G–R direction controls the charge density 50 . Highly dispersive bands correspond to higher electrical conductivity due to their low carrier effective mass and higher charge mobility 51 .…”
Section: Resultsmentioning
confidence: 99%
“…Firstly, it should be noted that the maximum conduction band (CBM) and minimum valence band (VBM) of the band structure of BMO and Ln-BMO are in the same position in K-space, indicating that the materials before and after doping belong to the direct band gap semiconductor. It has better responsive activity than other semiconductor materials [46]. Compared to BMO, the electronic states of Ln-BMO in the VB and CB are denser, indicating that more electron states are generated in the valence and conduction bands.…”
Section: Band Structurementioning
confidence: 98%