Correlation between Crystallite Characteristics and the Properties of Copper Thin Film Deposited by Magnetron Sputtering: Bias Voltage Effect

Abstract

This work investigates the properties of copper thin films deposited by magnetron sputtering. The substrate is biased by a negative voltage (Vs), which controls the energy ions bombardment during the deposition of the thin films. In order to focus solely on the ions energy contribution, the power supply was fixed and the working pressure was selected at 5 Pa. This ensures energetic sputtered particles completely thermalized, by a sufficient number of collisions with the Argon gas. X-ray diffraction analysis revealed that substrate voltage Vs affects essentially the structure and size of the formed crystallites. The preferred orientation (111) and the larger crystallite size (30 nm) were achieved at Vs = - 60 V. The Cu (111)/(200) peak intensity ratio is maximal (12.55) at - 60 V, corresponding to the lowest resistivity value (6.33 mW.cm). Optimum corrosion resistance of the deposited thin film was achieved at -60 V. At high crystallite sizes, nanoindentation analysis showed a thin film that is more elastic (133 GPa) and less hard (1.96 GPa).