Correlation between energy positions of deep intrinsic point-defect levels and a limiting fermi level in irradiated III–V semiconductors

Abstract

The energy levels of neutral anion (V A ) and cation (V C ) vacancies and antisite defects are calculated for the anion C A and cation A C sublattices of III-V semiconductors. An averaged energy level position for these defects is estimated to be E av abs = 4.9 eV. The position coincides with the local charge electroneutrality level. It is shown that the case, where the total energies of formation of V A , V C and antisite C A , A C defects in the sublattices of binary semiconductors are similar, corresponds to the point-defect equilibrium condition and stabilization of the Fermi level in the proximity of the local charge electroneutrality level.