Correlation between growth kinetics and nanoscale resistive switching properties of SrTiO3 thin films

Muenstermann, Ruth; Menke, Tobias; Dittmann, Ralf W.; Mi, Shao‐Bo; Jia, Chun-Lin; Park, Dae-Sung; Mayer, J.

doi:10.1063/1.3520674

Cited by 50 publications

(51 citation statements)

References 33 publications

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“…These spots can be identified with exits of conducting STO filaments on the thin film surface. According to our previous studies, 15 the positions of these filaments could be ascribed to defective thin film regions. According to the fact that the reduction enthalpy is lowered at extended defects in STO, 24 these areas are preferentially reduced by the application of the conductive tip.…”

Section: -3mentioning

confidence: 99%

Detection of filament formation in forming-free resistive switching SrTiO3 devices with Ti top electrodes

Stille

Lenser²,

Dittmann³

et al. 2012

Applied Physics Letters

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Photoexpansion and nano-lenslet formation in amorphous As2S3 thin films by 800nm femtosecond laser irradiation J. Appl. Phys. 112, 033105 (2012) Thickness effects on the magnetic and electrical transport properties of highly epitaxial LaBaCo2O5.5+δ thin films on MgO substrates Appl. Phys. Lett. 101, 021602 (2012) Temperature dependence of nanometer-size metallic phase texture and its correlation with bulk magnetic and transport properties and defects of a (La0.4Pr0.6)0.67Ca0.33MnO3 film Appl. Phys. Lett. 101, 022404 (2012) Theoretical and experimental investigation of magnetoelectric effect for bending-tension coupled modes in magnetostrictive-piezoelectric layered composites J. Appl. Phys. 112, 013908 (2012) Comment on "Twin symmetry texture of energetically condensed niobium thin films on sapphire substrates (aplane Al2O3)" [J.

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Section: -3mentioning

confidence: 99%

Detection of filament formation in forming-free resistive switching SrTiO3 devices with Ti top electrodes

Stille

Lenser²,

Dittmann³

et al. 2012

Applied Physics Letters

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“…14,36 CAFM was utilized by Muenstermann et al 37 to investigate the morphology and different defect paths in niobium (Nb) doped SrTiO 3 stacks.…”

Section: 33-35mentioning

confidence: 99%

Microscopic investigations of switching phenomenon in memristive systems: a mini review

Younis

2018

RSC Adv.

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Resistive switching memories have been regarded as one of the most up and coming memory systems and researchers have shown great interest in them because of their simple structure, high speed and low fabrication cost. These memory systems also have great potential for scaling, however, this has been difficult to achieve without detailed understanding of underlying switching mechanisms. Meanwhile, scaling down could also raise reliability concerns in its performance. This work provides an overview of various switching mechanisms and their investigations at nanoscale levels using high resolution microscopy techniques. In this mini review, the main focus was to understand the working mechanism derived from the so-called filament model. The high resolution conductive atomic force microscope, transmission electron microscope and scanning electron microscopes are the best tools available to investigate the dynamics of filamentary switching. Several issues with the existing techniques are also highlighted.

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“…Among these, ferro-electricity, para-electricity, resistive-switching behavior and oxygen sensing have been reported for thin STO layers deposited by various techniques, such as physical vapor deposition (PVD), chemical vapor deposition (CVD) and pulsed laser deposition (PLD). [1][2][3][4][5][6][7][8][9] Furthermore STO is an ultrahigh-k material with a theoretical k-value ∼300 for bulk STO. This property combined with a good thermal stability and relatively low crystallization temperature makes STO the dielectric material of choice for next generation dynamic random access memories (DRAM).…”

mentioning

confidence: 99%

Crystallization Study by Transmission Electron Microscopy of SrTiO₃Thin Films Prepared by Plasma-Assisted ALD

Longo

Verheijen

Roozeboom

et al. 2013

ECS J. Solid State Sci. Technol.

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The crystallization behavior of thin strontium titanate (SrTiO3, STO) films with ∼15 nm thickness was studied by Transmission Electron Microscopy (TEM). Amorphous STO films with [Sr]/([Sr]+[Ti]) ratio ranging from 0.50 to 0.63 were deposited at 350°C by plasma-assisted ALD and subsequently treated by rapid thermal annealing in flowing N2 for crystallization. Different temperatures and annealing durations were employed to fully characterize the crystallization process. TEM analysis showed that transrotational crystals were formed and evidenced the influence of the STO composition and of the thermal budget applied on the grain size, crack and void formation. In particular, Sr-rich layers ([Sr]/([Sr]+[Ti] ≥ 0.59) showed a finer crystalline structure which was imputed to a higher nucleation probability at the onset of the crystallization process. Crystallization into the perovskite structure was confirmed for all the film compositions studied. By tuning the STO composition and the thermal budget of the annealing step it was demonstrated that it is possible to control the microstructure of the crystallized film as a further step in optimizing the STO film properties.

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Correlation between growth kinetics and nanoscale resistive switching properties of SrTiO3 thin films

Abstract: Articles you may be interested inBipolar resistive switching behavior of La0.5Sr0.5CoO3−σ films for nonvolatile memory applications Appl. Phys. Lett.

Cited by 50 publications

References 33 publications

Detection of filament formation in forming-free resistive switching SrTiO3 devices with Ti top electrodes

Detection of filament formation in forming-free resistive switching SrTiO3 devices with Ti top electrodes

Microscopic investigations of switching phenomenon in memristive systems: a mini review

Crystallization Study by Transmission Electron Microscopy of SrTiO₃Thin Films Prepared by Plasma-Assisted ALD

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Correlation between growth kinetics and nanoscale resistive switching properties of SrTiO3 thin films

Abstract: Articles you may be interested inBipolar resistive switching behavior of La0.5Sr0.5CoO3−σ films for nonvolatile memory applications Appl. Phys. Lett.

Cited by 50 publications

References 33 publications

Detection of filament formation in forming-free resistive switching SrTiO3 devices with Ti top electrodes

Detection of filament formation in forming-free resistive switching SrTiO3 devices with Ti top electrodes

Microscopic investigations of switching phenomenon in memristive systems: a mini review

Crystallization Study by Transmission Electron Microscopy of SrTiO3Thin Films Prepared by Plasma-Assisted ALD

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Product

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Crystallization Study by Transmission Electron Microscopy of SrTiO₃Thin Films Prepared by Plasma-Assisted ALD