Correlation between hot carrier stress, oxide breakdown and gate leakage current for monitoring plasma processing induced damage on gate oxide

Ackaert, J.; Wang, Zhichun; Backer, E. De; Salm, Cora

doi:10.1109/ppid.2002.1042605

Cited by 12 publications

(2 citation statements)

References 10 publications

(4 reference statements)

Supporting

Mentioning

Contrasting

Order By: Relevance

“…The occurrence of additional gate oxide leakage indicates that additional current paths have been generated within the gate oxide. However, prior to the formation of a conductive path within the SiO 2 bulk, the SiO 2 /Si substrate interface must accumulate a sufficient number of defects due to the damage process, resulting in the degradation of transistor reliability including the occurrence of hot-carrier-injection (HCI) stress 15) or NBTI stress. 16) In other words, the degradation of transistor reliability occurs before the gate leakage increases.…”

Section: Transistor Reliability Degradation Modelmentioning

confidence: 99%

Effects of Plasma Damage on Metal–Insulator–Metal Capacitors and Transistors for Advanced Mixed-Signal/Radio-Frequency Metal–Oxide–Semiconductor Field-Effect Transistor Technology

Weng¹,

Lee

Lin³

et al. 2009

Jpn. J. Appl. Phys.

View full text Add to dashboard Cite

The effects of damage on mixed-signal (MS)/radio-frequency (RF) circuits integrated with metal-insulator-metal (MIM) capacitors and advanced metal-oxide-semiconductor field-effect transistors (MOSFETs) are studied in this work. The impact of damage on an MIM oxide is evaluated by connecting its capacitor top metal (CTM) to an upper-level metal with a large antenna ratio (AR CTM) used in an actual CTM circuit connected to an interconnect. In addition to the dielectric degradation of a transistor, we also investigate the damage-enhanced negative bias temperature instability (NBTI) degradation of a transistor with its gate electrode connected to an MIM capacitor with a large AR CTM for various gate oxide thicknesses. A model is proposed to explain the experimentally observed dependence of NBTI degradation on AR CTM and accurately simulate failure distributions in the presence of plasma damage.

show abstract

Section: Transistor Reliability Degradation Modelmentioning

confidence: 99%

Effects of Plasma Damage on Metal–Insulator–Metal Capacitors and Transistors for Advanced Mixed-Signal/Radio-Frequency Metal–Oxide–Semiconductor Field-Effect Transistor Technology

Weng¹,

Lee

Lin³

et al. 2009

Jpn. J. Appl. Phys.

View full text Add to dashboard Cite

show abstract

“…Note that the designer must try to maximize the product in the numerator of Eq. An initial gate leakage current lower than 0.1 nA also guarantees that the applied electrical field of 10 MV/cm can be used without causing long term degradation effects [13]. Of course the three performance indicators (unbalanced PAE, power gain, output power) are interdependent, therefore maximizing one performance indicator results in lowering another.…”

Section: A Figure Of Merit For Saturated Pamentioning

confidence: 99%

A Fully Integrated Class 1 Bluetooth 0.25 μm CMOS PA

Mertens

Steyaert

2005

Analog Integr Circ Sig Process

View full text Add to dashboard Cite

A fully integrated 0.25 µm CMOS bluetooth class 1 power amplifier is presented. On this chip all inductors and decoupling capacitors are situated on the silicon die. Due to the high level of integration, a cheap flip chip assembly method has been used. The chip delivers 138 mW (21.4 dBm) of output power with a power added efficiency of 25.8%. When the amplifier is tuned to its optimum frequency of 2.1 GHz, the output power increases to 184 mW and the power added efficiency increases to 29.5%. To compare the performance of this realisation with other recently published PA, a figure of merit for saturated (switched) power amplifiers is introduced.

show abstract

Plasma process induced damages on n-MOSFET with plasma oxidized and nitrided gate dielectrics

Jang¹,

Ha²,

Yoo³

et al. 2004

Microelectronic Engineering

View full text Add to dashboard Cite

Correlation between hot carrier stress, oxide breakdown and gate leakage current for monitoring plasma processing induced damage on gate oxide

Cited by 12 publications

References 10 publications

Effects of Plasma Damage on Metal–Insulator–Metal Capacitors and Transistors for Advanced Mixed-Signal/Radio-Frequency Metal–Oxide–Semiconductor Field-Effect Transistor Technology

Effects of Plasma Damage on Metal–Insulator–Metal Capacitors and Transistors for Advanced Mixed-Signal/Radio-Frequency Metal–Oxide–Semiconductor Field-Effect Transistor Technology

A Fully Integrated Class 1 Bluetooth 0.25 μm CMOS PA

Plasma process induced damages on n-MOSFET with plasma oxidized and nitrided gate dielectrics

Contact Info

Product

Resources

About