Correlation between island-formation kinetics, surface roughening, and RHEED oscillation damping during GaAs homoepitaxy

Heyn, Ch.; Franke, T.; Antón, R.; Harsdorff, M.

doi:10.1103/physrevb.56.13483

Cited by 28 publications

(10 citation statements)

References 22 publications

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“…Some characteristic features of compound semiconductors can, however, be included in the generic model as a compromise. 40,41,42 We use an algorithm 43 that advances simulated time depending on the probability of the chosen event. This algorithm is commonly used in the epitaxial growth simulations.…”

Section: A Simulation Methodsmentioning

confidence: 99%

Ostwald ripening of faceted two-dimensional islands

2007

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We study Ostwald ripening of two-dimensional adatom and advacancy islands on a crystal surface by means of kinetic Monte Carlo simulations. At large bond energies the islands are square-shaped, which qualitatively changes the coarsening kinetics. The Gibbs--Thomson chemical potential is violated: the coarsening proceeds through a sequence of `magic' sizes corresponding to square or rectangular islands. The coarsening becomes attachment-limited, but Wagner's asymptotic law is reached after a very long transient time. The unusual coarsening kinetics obtained in Monte Carlo simulations are well described by the Becker--D\"oring equations of nucleation kinetics. These equations can be applied to a wide range of coarsening problems

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Section: A Simulation Methodsmentioning

confidence: 99%

Ostwald ripening of faceted two-dimensional islands

2007

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“…Although epitaxial integration of SrTiO 3 on Si has been successfully demonstrated 15 and has been scaled up to 200 mm Si wafers using an industry-scale molecular beam epitaxy (MBE) system 16 , typical film growth rates of about 50 nm h −1 or lower 16–19 impede high-throughput required for profitability. MBE systems have been operated on an industrial scale since the 1980s 20 primarily for the growth of high-quality binary semiconductor structures with controlled stoichiometry and desired composition at growth rates in excess of 1000 nm h −1 21,22 . Metamorphic buffers have been developed for nonoxide materials using this growth technology 23,24 .…”

Section: Introductionmentioning

confidence: 99%

Scaling growth rates for perovskite oxide virtual substrates on silicon

et al. 2019

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The availability of native substrates is a cornerstone in the development of microelectronic technologies relying on epitaxial films. If native substrates are not available, virtual substrates - crystalline buffer layers epitaxially grown on a structurally dissimilar substrate - offer a solution. Realizing commercially viable virtual substrates requires the growth of high-quality films at high growth rates for large-scale production. We report the stoichiometric growth of SrTiO 3 exceeding 600 nm hr −1 . This tenfold increase in growth rate compared to SrTiO 3 grown on silicon by conventional methods is enabled by a self-regulated growth window accessible in hybrid molecular beam epitaxy. Overcoming the materials integration challenge for complex oxides on silicon using virtual substrates opens a path to develop new electronic devices in the More than Moore era and silicon integrated quantum computation hardware.

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“…RHEED patterns contain both qualitative and quantitative information about a growth, such as the in-plane lattice parameters [2], growth mode [3,4] and surface disorder [5]. The intensity oscillations in RHEED patterns during growth have been commonly used to control the film thickness during epitaxial growth, as the periodicity of the oscillation is correlated with the growth rate [6,7]. In typical single or two-component materials such as Si or GaAs, the oscillation period directly corresponds with the deposition time of a single monolayer in a layer-bylayer growth mode, and thus is equivalent to the growth rate measured in monolayers/second.…”

Section: Introductionmentioning

confidence: 99%

Machine Learning Analysis of Perovskite Oxides Grown by Molecular Beam Epitaxy

Provence,

Thapa,

Paudel

et al. 2020

Preprint

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Reflection high-energy electron diffraction (RHEED) is a ubiquitous in situ molecular beam epitaxial (MBE) characterization tool. Although RHEED can be a powerful means for crystal surface structure determination, it is often used as a static qualitative surface characterization method at discrete intervals during a growth. A full analysis of RHEED data collected during the entirety of MBE growths is made possible using principle component analysis (PCA) and k-means clustering to examine significant boundaries that occur in the temporal clusters grouped from RHEED data and identify statistically significant patterns. This process is applied to data from homoepitaxial SrTiO3 growths, heteroepitaxial SrTiO3 grown on scandate substrates, BaSnO3 films grown on SrTiO3 substrates, and LaNiO3 films grown on LaAlO3 substrates. This analysis may provide additional insights into the surface evolution and transitions in growth modes at precise times and depths during growth, and that video archival of an entire RHEED image sequence may be able to provide more insight and control over growth processes and film quality.

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Correlation between island-formation kinetics, surface roughening, and RHEED oscillation damping during GaAs homoepitaxy

Cited by 28 publications

References 22 publications

Ostwald ripening of faceted two-dimensional islands

Ostwald ripening of faceted two-dimensional islands

Scaling growth rates for perovskite oxide virtual substrates on silicon

Machine Learning Analysis of Perovskite Oxides Grown by Molecular Beam Epitaxy

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