Correlation between light emission and dangling bonds in porous silicon

Shimasaki, M.; Show, Yoshiyuki; Iwase, M.; Izumi, Tomio; Ichinohe, Takahisa; Nozaki, Satoshi; Morisaki, Hiroshi

doi:10.1016/0169-4332(95)00304-5

Cited by 14 publications

(6 citation statements)

References 13 publications

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“…33,46 However, for PS layers, Mawhinney et al 32 reported that the growth of the absorbance frequencies near 1176 and 1065 cm Ϫ1 is due to the oxidation of the PS surface, and these modes are distinct from Si-O-Si modes at 1134 and 1125 cm Ϫ1 , which originate from oxygen initially present in the bulk of the silicon. They also observed the SiO-H stretch mode by an isotopic method using 16 O and 18 O. This confirms the results of Steckl et al 8 and Yan et al 10 Also in this work the weak band due to SiOH (and H 2 O) was observed at 3400-3500 cm Ϫ1 .…”

Section: Discussionsupporting

confidence: 91%

“…Shih et al 15 indicated that the PL increases in an anodically oxidized PS layer with increasing laser illumination time while the PS is oxidized without hydrogen loss, and the dangling bond density decreases in the PLenhanced samples. Many authors [16][17][18] have reported that the Si dangling bond is an important factor in PS luminescence. However, in contrast, Prokes and Carlos 19 found a direct correlation between the nonbridging oxygen-hole center clusters (seen as a Si vacancy) and the red PL intensity.…”

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confidence: 99%

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Quenching of Porous Silicon Photoluminescence by Ammonia Hydrogen Peroxide Mixture

Fukuda¹,

Yu²,

Zhou

et al. 2000

J. Electrochem. Soc.

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Low resistivity p‐type porous silicon (PS) samples are subjected to oxidation treatment in an ammonia hydrogen peroxide mixture (APM) and to etching in 0.00035% and 0.0014% ammonia solutions at room temperature for 10 to 2700 s. Photoluminescence (PL) properties of the treated PS are correlated with chemical states and microstructures analyzed by Fourier transform infrared (FTIR) spectroscopy and scanning electron microscopy (SEM). The intensity of the red PL from PS is increased by 0.00035% ammonia solution, decreased by 0.0014% ammonia solution, and almost completely quenched by an APM. FTIR analysis shows that the ammonia solutions do not affect the chemical states of the PS surface, which is terminated primarily by hydrogen. Immersion in an APM replaces the hydrogen‐terminated surface with an oxygen‐terminated surface. SEM observations indicate that the thickness of the PS layer is reduced with aqueous ammonia treatment for 2700 s, but not with APM treatment. These results suggest that the PL quenching by an APM may relate to the dehydrogenated surface. © 2000 The Electrochemical Society. All rights reserved.

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Section: Discussionsupporting

confidence: 91%

mentioning

confidence: 99%

Quenching of Porous Silicon Photoluminescence by Ammonia Hydrogen Peroxide Mixture

Fukuda¹,

Yu²,

Zhou

et al. 2000

J. Electrochem. Soc.

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“…Nanometer-sized particles, especially silicon, raise much interest in applications not only to electronic devices but also to optoelectronic devices. In fact, photoluminescence spectra for silicon nanoparticles have been widely studied to apply nanosized silicon to optoelectronic devices. − Silicon clusters composed of almost all surface atoms become relatively stable because they have corresponding compact structures with less number of dangling bonds . For example, silicon nanoparticles reveal lower oxidation reaction rates as their diameters decrease .…”

Section: Introductionmentioning

confidence: 99%

Characterization and Preparation of Chained Si Species in Zeolite Supercages

et al. 2004

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Chained Si species were synthesized in Y-type zeolite supercages by the reaction with phenylsilane (PhSiH3) at 423 K. The preparation process was studied with the infrared spectra, and the prepared Si species were characterized with X-ray photoelectron spectroscopy (XPS), photoluminescence (PL) spectra, and ultraviolet absorption spectra. The initial sticking reaction of SiH x species to zeolite framework was studied with a temperature-programmed desorption experiment on the deuterium-exchanged zeolite using a quadrupole mass spectrometer. Benzene molecules composed selectively with d1 species (C6H5D) were desorbed with hydrogen molecules at 360−380 K; concurrently, hydroxyl groups in supercages disappeared. These results imply that the initial grafting reaction of Si species to a HY−zeolite framework proceeds through the thermal reaction of PhSiH3 with hydroxyl groups in supercages at 298 K to yield [O]−SiH3 and benzene. The formed [O]−SiH x species were characterized with infrared spectra as a function of reaction temperature. The wavenumbers shift in Si−H species was explained by the thermal conversion of [O]−SiH3 (2180 cm-1) to [O]2−SiH2 (2208 cm-1) and [O]3−SiH (2270 cm-1). The reaction of PhSiH3 molecules with hydroxyl groups in supercages at 423 K suggests the propagation of Si species finally to yield [O]2−Si x H y . The successive propagation reaction with PhSiH3 yielded Si species with Si 2p XPS signals at 101.4 and 102.3 eV, which could be assigned to polysilane families. The quantitative XPS analysis implied that polysilane families with about 30 Si atoms were produced in a zeolite super cage. The zeolite pressed between metal barrels showed intense PL spectra peaked at 340 (3.6 eV) and 460 nm (2.7 eV). The peak intensities diminished considerably with treatment with oxygen gas at 573 K for 48 h, which caused the selective enhancement of X-ray diffraction intensity at around 2θ = 6°, characteristic of a zeolite (111) face. These results induce that surface contaminants such as organic compounds can be removed by the oxygen treatment as well as the zeolite crystallinity is improved by the decrease of oxygen vacancies. Chained Si species in zeolite supercages showed intense PL spectra at around 4 eV. The Si species can be extracted in hexane at 298 K, and the extracted species also showed redshifted intense PL spectra peaked at 4.07 eV. The broad UV spectra due to the polysilane backbone structure was detected at 220−280 nm. It is concluded that polysilane families are formed in zeolite supercages and absorb excitation photon energy and relax to show PL characteristic to the Si backbone structure.

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“…Indeed, a strong EPR response from Si NPs (curve 1) caused by a large amount (0.51 × 10 19 spin g −1 ) of paramagnetic states with unpaired electrons can be seen in Figure c. Data analysis gives a g‐factor value 2.0055 ± 0.0005 that can indicate the presence of dangling bonds of disordered silicon . Based on studied optoelectronic properties, one can imagine a core‐shell structure of Si NPs prepared by laser decomposition where defective amorphous silicon core is covered with optically active crystalline Si/SiO x shell.…”

Section: Resultsmentioning

confidence: 99%

“…Being nonequilibrium process, laser decomposition could provoke an efficient interaction between silicon and oxygen forming Si‐O bonds and resulting to oxidation of silicon NPs. Their surface chemistry is studied by Fourier‐transform infrared spectroscopy (FTIR) indicating some characteristic features in the spectrum, in particular, signals at 911 cm −1 (Si‐H 2 ), 1055 cm −1 (Si‐O‐Si), and 2115 cm −1 (Si‐H x ) that could point out some types of defect states in Si NPs studied by EPR spectroscopy. Indeed, a strong EPR response from Si NPs (curve 1) caused by a large amount (0.51 × 10 19 spin g −1 ) of paramagnetic states with unpaired electrons can be seen in Figure c.…”

Section: Resultsmentioning

confidence: 99%

Size Modification of Optically Active Contamination‐Free Silicon Nanoparticles with Paramagnetic Defects by Their Fast Synthesis and Dissolution

Ryabchikov

2018

Physica Status Solidi (a)

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Contamination-free silicon-based nanoparticles (NPs) with several modalities are developed in this work. They are formed by non-toxic laser-assisted decomposition of silicon microgranules homogeneously dispersed in deionized water. Precise control of numerous experimental parameters allows repeatable fine tuning of nanoparticle size solving significant lacks of a direct laser ablation routine. Such a method provokes a huge amount of paramagnetic defect states of optically active silicon NPs that can serve as a contrast agent for magnetic resonance and nonlinear optical imaging. Perspectives of their bioapplication are driven by detected their fast size degradation in a NaCl-based medium.

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Correlation between light emission and dangling bonds in porous silicon

Cited by 14 publications

References 13 publications

Quenching of Porous Silicon Photoluminescence by Ammonia Hydrogen Peroxide Mixture

Quenching of Porous Silicon Photoluminescence by Ammonia Hydrogen Peroxide Mixture

Characterization and Preparation of Chained Si Species in Zeolite Supercages

Size Modification of Optically Active Contamination‐Free Silicon Nanoparticles with Paramagnetic Defects by Their Fast Synthesis and Dissolution

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