Correlation between luminescence and compositional striations in InGaN layers grown on miscut GaN substrates

Abstract

Articles you may be interested inComparative study of polar and semipolar ( 11 2 ¯ 2 ) InGaN layers grown by metalorganic vapour phase epitaxy

Investigation of InN mole fraction fluctuation in InGaN films grown by RF‐MBE

“…shows that Ga atoms are preferentially captured at step edges and that In atoms are swept out. This is because Ga−N has a higher binding energy than In−N and is consistent with results for InGaN growth on a misoriented GaN substrate [3,5,7]. We have recently developed a novel growth method, called droplet elimination by radical-beam irradiation (DERI) for InN [14].…”

“…Yamada et al also performed SNOM measurements and found that Ga-rich InGaN grows around the spiral growth region [4]. Discussion regarding In and Ga incorporation continues and our understanding of the composition fluctuation mechanism in InGaN is still limited [3][4][5][6][7]. To gain a better understanding of incorporation and fluctuation mechanisms in InGaN, it is critical to observe the In content distribution on a nanoscale.…”

“…Much effort has been devoted to understanding this phenomenon and various techniques have been used to investigate it, including cathodoluminescence (CL) and scanning near-field optical microscopy (SNOM). Krysko et al observed InN mole fraction fluctuation by performing CL measurements of InGaN grown on misoriented substrates [3]. Yamada et al also performed SNOM measurements and found that Ga-rich InGaN grows around the spiral growth region [4].…”

Polarization-resolved fine-structure splitting of zero-dimensional InxGa1−xN excitons

“…16 A ∼2.5-nm-thick compressively strained In x Ga 1-x N layer (nominally 20% In) was formed on a 230-nm GaN barrier layer and capped with a 30-nm-thick GaN layer. 17,18 Scanning transmission electron microscopy imaging reveals significant In segregation within the In x Ga 1-x N layer and the formation of QD-like exciton localization centers. The density of optically active localization centers were determined to be in the range 10 9 −10 10 cm −2 , as estimated from number of sharp emission lines observed in the optical emission spectra.…”

Measurement of misorientation of AlN layer grown on (111)Si for freestanding substrate

“…More recently, they found that the quality of the film is depending on the misorientation of (111) Si starting substrate. On the other hand, it is widely known that the wavelength of emitted light from InGaN based light emitting devices is highly influenced by the misorientation of crystal due to different incorporation of In atoms at steps resulting in formation of compositional growth striations [3]. For such reasons, misorientation determination is especially important for nitride semiconductors from the view point of crystal growth and device property.…”