Correlation between mechanical and electrical properties of silicon oxide deposited by PECVD-TEOS at low temperature

Gonçalves, L. C. D.; Viana, C.E.; Santos, João; Morimoto, Nilton Itiro

doi:10.1016/j.surfcoat.2003.10.069

Cited by 10 publications

(5 citation statements)

References 11 publications

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“…Conventional IGZO TFTs used as a pixel switcher and driver in the AMOLED display have the PECVDderived SiO 2 (∼200 nm, κ ≈ 3.9) as a gate oxide where the areal capacitance (C ox ) is ∼1.7 × 10 −8 F/cm 2 . 62,63 In this study, the enhanced C ox value (8.9 × 10 −7 F/cm 2 ) by ∼50-fold resulted in the small SS value of 78.4 mV/decade and low voltage driving range (<2 V). 64,65 The boost, in terms of mobility, can be also explained by this improved capacitive coupling because the increase in free electron density under the accumulation mode (ex.…”

Section: Device Fabrication and Characterizationmentioning

confidence: 57%

“…Note that the physical thickness (10 nm) of HfO 2 ensured low gate leakage currents less than ∼10 –12 A for all devices, even with the low EOT values of 3.9 nm (see Figure S3 in the Supporting Information). Conventional IGZO TFTs used as a pixel switcher and driver in the AMOLED display have the PECVD-derived SiO 2 (∼200 nm, κ ≈ 3.9) as a gate oxide where the areal capacitance ( C ox ) is ∼1.7 × 10 –8 F/cm 2 . , In this study, the enhanced C ox value (8.9 × 10 –7 F/cm 2 ) by ∼50-fold resulted in the small SS value of 78.4 mV/decade and low voltage driving range (<2 V). , The boost, in terms of mobility, can be also explained by this improved capacitive coupling because the increase in free electron density under the accumulation mode (ex. V GS = 0.5 V) caused the enhanced field-effect mobility, because of the percolation conduction mechanism. , Despite of these promising features, the In 2 O y TFTs still suffered from the non-negligible V TH spread (worst standard deviation of V TH = ±0.12 V, Figure S4 in the Supporting Information), as well as the slightly negative V TH value of −0.6 V, which should result from the uncontrolled GB distribution due to the completely random polycrystalline structure.…”

Section: Results and Discussionmentioning

confidence: 74%

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High-Performance Thin-Film Transistor with Atomic Layer Deposition (ALD)-Derived Indium–Gallium Oxide Channel for Back-End-of-Line Compatible Transistor Applications: Cation Combinatorial Approach

Hur

Kim

Yoon

et al. 2022

ACS Appl. Mater. Interfaces

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In this paper, the feasibility of an indium−gallium oxide (In 2(1-x) Ga 2x O y ) film through combinatorial atomic layer deposition (ALD) as an alternative channel material for back-endof-line (BEOL) compatible transistor applications is studied. The microstructure of random polycrystalline In 2 O y with a bixbyite structure was converted to the amorphous phase of In 2(1−x) Ga 2x O y film under thermal annealing at 400 °C when the fraction of Ga is ≥29 at. %. In contrast, the enhancement in the orientation of the (222) face and subsequent grain size was observed for the In 1.60 Ga 0.40 O y film with the intermediate Ga fraction of 20 at. %. The suitability as a channel layer was tested on the 10-nm-thick HfO 2 gate oxide where the natural length was designed to meet the requirement of short channel devices with a smaller gate length (<100 nm). The In 1.60 Ga 0.40 O y thin-film transistors (TFTs) exhibited the high field-effect mobility (μ FE ) of 71.27 ± 0.98 cm 2 /(V s), low subthreshold gate swing (SS) of 74.4 mV/decade, threshold voltage (V TH ) of −0.3 V, and I ON/OFF ratio of >10 8 , which would be applicable to the logic devices such as peripheral circuit of heterogeneous DRAM. The in-depth origin for this promising performance was discussed in detail, based on physical, optical, and chemical analysis.

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Section: Device Fabrication and Characterizationmentioning

confidence: 57%

Section: Results and Discussionmentioning

confidence: 74%

High-Performance Thin-Film Transistor with Atomic Layer Deposition (ALD)-Derived Indium–Gallium Oxide Channel for Back-End-of-Line Compatible Transistor Applications: Cation Combinatorial Approach

Hur

Kim

Yoon

et al. 2022

ACS Appl. Mater. Interfaces

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“…3(b). Here, film properties of a-SiO2:H were as follows: mass density 2.2 g/cm 3 [26] and its component H:5, Si:31.7, O:63.3 at.% [27,28]. The Ar + ion energy and its parallel component as function of depth h of trench and angle of ion incident used in this simulation is shown in Fig.…”

Section: Resultsmentioning

confidence: 99%

Ion Trajectory Control in Processing Plasmas for Nano-Fabrication

Otomo,

Nagao,

Kamataki

et al. 2023

KEM

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To realize ion trajectory control in processing plasmas for nano-fabrication, we applied amplitude modulation (AM) discharges to control of ion trajectory in high aspect trenches. We investigated behavior of incident ions in AR25 (aspect ratio = 25) trench structure in AM discharges using data of Ar+ ion with ion energy and ion angular distribution functions (IEDF and IADF) on the substrate obtained by the PIC-MCC model. AM discharges have higher ion flux onto the trench sidewalls than the continuous waveform (CW) discharges, whereas AM discharges have almost the same ion energy as CW ones. SRIM simulation results suggest that AM discharges can desorb more hydrogen atoms from TEOS-PECVD SiO2 films on the trench sidewall than CW ones, which explains the previous results of improved SiO2 film quality on trench sidewall by AM discharges.

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“…lower leakage current and higher breakdown voltage. 8,17,18) However, high-temperature annealing may lose some effectiveness of the lowtemperature deposition process. Therefore, in order to reduce the number of residual OH bonds before removing a deposited film from the deposition chamber, we treated a deposited SiO x film by in-site post-deposition heating (PDH) and compared the OH content with that of a non-PDH(NPDH)-treated film.…”

Section: Ohmentioning

confidence: 99%

Study on residual OH content in low-temperature Si oxide films after in situ post-deposition heating (PDH)

Horita,

2023

Jpn. J. Appl. Phys.

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We investigated the post-deposition-heating (PDH) effect on OH-content in the SiOx films deposited by atmospheric-pressure CVD using a deposition source of silicone oil (SO) with O3 and TCE vapor at the temperature Td of 180 to 250 oC. The PDH is performed in-situ for 5 min in the deposition chamber just after film deposition without supply of SO, where the heating temperature is the same as Td. OH contents in the films deposited normally are decreased with increasing Td. On the contrary, those with PDH are decreased with deceasing Td from 220 oC, and, at Td = 190 oC, a minimum OH content can be obtained. This means that lower OH content remains at a lower deposition temperature. This PDH effect on OH reduction can be explained by easily-reconstructible structure of SiOx films deposited at low temperature. Further, we discussed mechanism of the PDH effect from the other points.

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Correlation between mechanical and electrical properties of silicon oxide deposited by PECVD-TEOS at low temperature

Cited by 10 publications

References 11 publications

High-Performance Thin-Film Transistor with Atomic Layer Deposition (ALD)-Derived Indium–Gallium Oxide Channel for Back-End-of-Line Compatible Transistor Applications: Cation Combinatorial Approach

High-Performance Thin-Film Transistor with Atomic Layer Deposition (ALD)-Derived Indium–Gallium Oxide Channel for Back-End-of-Line Compatible Transistor Applications: Cation Combinatorial Approach

Ion Trajectory Control in Processing Plasmas for Nano-Fabrication

Study on residual OH content in low-temperature Si oxide films after in situ post-deposition heating (PDH)

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