Correlation between optical electronegativity and refractive index of ternary chalcopyrites, semiconductors, insulators, oxides and alkali halides

Reddy, R.R.; Gopal, K. Rama; Narasimhulu, K.; Reddy, L. Siva Sankara; kumar, kunal; Reddy, C. R. R. M.; Ahmed, Syed Nisar

doi:10.1016/j.optmat.2008.03.010

Cited by 155 publications

(40 citation statements)

References 20 publications

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“…Thus, there must be a correlation between refractive index and product of ionic charge and average atomic number of constituent atoms. Moss [27,28] and Reddy et al [41], band gap and optical electronegativity depends on the refractive index. So according to above description there must be a correlation between product of ionic charge and band gap and optical electronegativity.…”

Section: Resultsmentioning

confidence: 95%

“…From the Ravindra relation, the refractive index cannot be greater than a value of 4.1, which corresponds to an energy gap of 6.587 eV. In an effort to broaden the application of these two concepts; several authors [40,41] (6) is that the refractive index is related to the high frequency dielectric constant of the crystals [27,28]. The dielectric constant also depends on the product of ionic charge and average atomic number of constituent atoms [18].…”

Section: Resultsmentioning

confidence: 99%

“…∆χ* Duffy's [33,34] ∆χ* This work n (Exp.) [41] n (Moss) [41] n (Ravindra) [41] This work α(Å3) [22] α(Å3) [21] α(Å3) [25,26] …”

Section: Journal Of Materials Physics and Chemistrymentioning

confidence: 99%

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Simplistic Theoretical Model for Optoelectronic Properties of Compound Semiconductors

Pal¹,

Tiwari²,

Gupta³

et al. 2014

JMPC

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In order to enhance the viability of this paper for that issue, we suggest adding this to the beginning of IV C 2 V ) structured solids. The electronic polarizability (α), refractive index (n), band gap (E g ) and optical electronegativity (∆χ) of these solids exhibit a linear relationship when plotted against the average atomic number constituent atoms (Z av ), but fall on different lines due to the region of product of the ionic charges (PIC) of the compounds. We have applied the proposed relation on these solids and found a better agreement with the experimental data as compared to the values evaluated by earlier researchers so far.

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Section: Resultsmentioning

confidence: 95%

Section: Resultsmentioning

confidence: 99%

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Simplistic Theoretical Model for Optoelectronic Properties of Compound Semiconductors

Pal¹,

Tiwari²,

Gupta³

et al. 2014

JMPC

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“…The correlation between optical energy gap and optical electronegativity is Dv* = 0.2688 E g [23,24]. Here Dv* = v anion * -v cation *, v anion * and v cation * are the optical electronegativities of anion and cation, respectively.…”

Section: Resultsmentioning

confidence: 99%

Magnetic and optical properties of La-doped BiFeO3 films prepared by sol–gel route

Gao

Tian

Zheng

et al. 2014

J Mater Sci: Mater Electron

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La-doped BiFeO 3 films were prepared on quartz substrates by sol-gel method. X-ray diffraction results showed that La doping can refrain from the forming of the impurity phase in the films. Magnetic measurement at room temperature indicated that the magnetization of the samples have been enhanced by the addition of La dopants. The optical constants and optical band gaps of the films were extracted from the transmittance spectra at the same time. At the wavelength of 650 nm, the refractive indices and extinction coefficients of the films decrease and increase with increasing La content, respectively. The optical band gaps of the samples decrease from 2.52 to 2.42 eV, and the electro-optical parameters E 0 /S 0 of the samples increase from 9.40 9 10 -14 to 2.71 9 10 -13 eV m 2 with the addition of La dopants. The optical electronegativity parameters Dv* decrease gradually from 0.68 to 0.65 with increasing the La composition, indicating La doping slightly affecting BFO ionic in nature.

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“…Recently, some authors [11][12][13][14] have proposed models correlate the refractive index with the electronegativity difference which is a very useful parameter in understanding the nature of chemical bonding and predicting several important physical parameters. In their work, Bahadur and Mishra [11] proposed an interesting simple formula between the high-frequency refractive index and electronegativity difference, which has been established for large number of A N B 8-N type binary semiconductors (groups: I-VII, II-VI, III-V and IV-VI.).…”

Section: Introductionmentioning

confidence: 99%

Modified expression for calculating refractive index of ANB8-N type binary semiconductors

Latreche

Daoud

2016

IJPR

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In their recent work, Bahadur and Mishra proposed a new simple formula between the high-frequency refractive index and optical electronegativity difference, which has been established for large number of A N B 8-N type binary semiconductors (groups: I-VII, II-VI, III-V and IV-VI.). In the present work, we have improved their expression by addition a correction term in their proposed formula. The minimum average percentage deviation in the present approach reveals that the modified Bahadur relation proves its identity and soundness compared to that of Bahadur's and others authors' relations.

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Correlation between optical electronegativity and refractive index of ternary chalcopyrites, semiconductors, insulators, oxides and alkali halides

Cited by 155 publications

References 20 publications

Simplistic Theoretical Model for Optoelectronic Properties of Compound Semiconductors

Simplistic Theoretical Model for Optoelectronic Properties of Compound Semiconductors

Magnetic and optical properties of La-doped BiFeO3 films prepared by sol–gel route

Modified expression for calculating refractive index of ANB8-N type binary semiconductors

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