Correlation between radiative transitions and structural defects in zinc selenide epitaxial layers

Shahzad, Khurram; Petruzzello, J.; Olego, D. J.; Cammack, D. A.; Gaines, J. M.

doi:10.1063/1.103875

Cited by 69 publications

(31 citation statements)

References 10 publications

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“…This is further confirmed by the existence of the n = 2 free exciton. In the PL spectrum, the so-called Y peak and I," which have been reported to be related to extended defects are clearly visible [7]. It has been mentioned that in ZnSe layers of comparable defect densities, both Y peak and I," are found to be stronger in pure material, i.e.…”

Section: 'mentioning

confidence: 95%

Current Activity in CNRS‐Sophia Antipolis Regarding Wide‐Gap II–VI Materials

Faurie

Brunet

Morhain

et al. 1995

Physica Status Solidi (b)

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Preliminary results about MBE growth and characterization of ZnSe-based alloys and multi-quantum wells (MQW) are presented. Undoped ZnSe and Zn, -,Cd,Se compounds exhibiting structural and optical properties, comparable to the best results previously published, are grown. RHEED intensity oscillations are observed during ZnSe and Zn, -,Cd,Se growth. Several Zn, -,Cd,Se/ZnSe MQWs are grown. RHEED intensity analysis is used to accurately control the well thicknesses. The MQWs produce very intense and sharp photoluminescence peaks. The sharpness of interfaces is confirmed by X-ray analysis. C1-doped ZnSe epilayers with doping levels at 77 K ranging from 6 x 10'' to 6 x lo'* cm-3 are obtained.

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Section: 'mentioning

confidence: 95%

Current Activity in CNRS‐Sophia Antipolis Regarding Wide‐Gap II–VI Materials

Faurie

Brunet

Morhain

et al. 1995

Physica Status Solidi (b)

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“…The 1-LO phonon replica for this peak can be observed at 2.740 eV. This peak has been related to structural defects [15], more exactly it is thought to be a result of recombinations involving selenium-site-related defects [16]. The appearance of this emission shows that heating under vacuum in the 500-600 ºC temperature range produces selenium losses and consequently Se vacancies in the samples.…”

Section: Resultsmentioning

confidence: 80%

“…1. This peak is due to a recombination involving selenium-site-related defects [15,16].The line at 2.803 eV corresponds to the recombination of free excitons (FX). These peaks are followed by a region where their 1-LO and 2-LO phonon replicas are located ( hw LO ¼ 31:8 meV).…”

Section: Resultsmentioning

confidence: 99%

Photoluminescence Study of ZnSe Single Crystals Obtained by Solid Phase Recrystallization under Different Pressure Conditions. Effects of Thermal Treatment

Garca

Remn

Zubiaga

et al. 2002

phys. stat. sol. (a)

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ZnSe single crystals, obtained by the Solid Phase Recrystallization (SPR) method under three different pressure conditions, 10 and 5 atm of Se, and 2 atm of argon, have been investigated by means of photoluminescence (PL) and optical microscopy. Special attention has been paid to the surface state of the samples. Samples recrystallized under 10 atm of Se present the best rate between the PL response for the excitonic zone and the deep level one that shows a “clean” PL emission without significant peaks and/or bands. The presence of slip bands has been detected and analysed by means of optical microscopy and photoluminescence. In order to study the changes introduced by post growth thermal treatments, we have analysed the low temperature PL response on SPR samples after different thermal treatments. Striking changes have been detected in the PL response before and after the thermal treatment. The involved mechanisms have been studied.

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“…[ 26 ] Other peaks of low intensity include the deep acceptor bound exciton I 1 d at 2.782 eV (generally attributed to Zn vacancies), [ 27 ] the broad donor-acceptor pair (DAP) emission peak at 2.73 eV (along with its LO phonon replica at 2.70 eV), and the dislocation bound exciton I v 0 at 2.775 eV. [ 28 ] These defect-bound excitons are frequently observed in high-quality fi lms deposited by means of conventional organometallic CVD. [ 29 ] Temperature-dependent photoluminescence shows that the bandgap emission is visible up to room temperature (Figure 3 b), implying that the HPCVD material has a low Se vacancy density, as Se vacancies are able to quench photoluminescence above 100 K. [ 30 ] The dark electrical conductivity at room temperature of the ZnSe wires etched out from silica is less than 10 − 13 S cm − 1 , implying that the Cl donor impurity concentration is very low and that the free carriers are depleted by trapping states at the grain boundaries.…”

Section: Zinc Selenide Optical Fibersmentioning

confidence: 99%

Zinc Selenide Optical Fibers

et al. 2011

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Semiconductor waveguide fabrication for photonics applications is usually performed in a planar geometry. However, over the past decade a new fi eld of semiconductor-based optical fi ber devices has emerged. The drawing of soft chalcogenide semiconductor glasses together with low melting point metals allows for meters-long distributed photoconductive detectors, for example. [ 1 , 2 ] Crystalline unary semiconductors (e.g., Si, Ge) have been chemically deposited at high pressure into silica capillaries, [ 3 , 4 ] allowing the optical and electronic properties of these materials to be exploited for applications such as all-fi ber optoelectronics. [ 5 -7 ] In contrast to planar rib and ridge waveguides with rectilinear cross sections that generally give rise to polarization dependence, the cylindrical fi ber waveguides have the advantage of a circular, polarization-independent cross section. Furthermore, the fi ber pores, and thus the wires deposited in them, are exceptionally smooth [ 8 ] with extremely uniform diameter over their entire length. The high-pressure chemical vapor deposition (HPCVD) technique is simple, low cost, and fl exible so that it can be modifi ed to fi ll a range of capillaries with differing core dimensions, while high production rates can be obtained by parallel fabrication of multiple fi bers in a single deposition. It can also be extended to fi ll the large number of micro-and nanoscale pores in microstructured optical fi bers (MOFs), providing additional geometrical design fl exibility to enhance the potential application base of the fi ber devices. [ 9 ] Semiconductor fi bers fabricated via HPCVD in silica pores also retain the inherent characteristics of silica fi bers, including their robustness and compatibility with existing optical fi ber infrastructure, thus presenting considerable advantages over fi bers based on multicomponent soft glasses.However, one key challenge in this rapidly developing fi eld is to realize low-optical-loss crystalline, direct-bandgap compound semiconductor fi bers. High-performance optoelectronic devices are almost exclusively fabricated from crystalline compound semiconductors owing to their superior light emission effi ciency, excellent electronic properties (e.g., high carrier mobility), and large optical nonlinearities. [ 10 ] In particular, compound semiconductors can have high second-order nonlinear optical coeffi cients, χ (2) , [ 11 ] not found in centrosymmetric crystalline unary semiconductors or in amorphous semiconductors. These second-order nonlinearities allow for effi cient frequency conversion on which devices such as optical parametric oscillators are typically based. [ 10 ] Compound semiconductors can also be optically transparent over a wider wavelength range than unary semiconductors, with ZnSe, for example, having excellent optical transmission at wavelengths from 500 to 22 000 nm. [ 12 ] An additional advantage of crystalline compound semiconductors is their ability to host transition metal ions; Cr 2 + -doped ZnSe functions as an ...

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Correlation between radiative transitions and structural defects in zinc selenide epitaxial layers

Cited by 69 publications

References 10 publications

Current Activity in CNRS‐Sophia Antipolis Regarding Wide‐Gap II–VI Materials

Current Activity in CNRS‐Sophia Antipolis Regarding Wide‐Gap II–VI Materials

Photoluminescence Study of ZnSe Single Crystals Obtained by Solid Phase Recrystallization under Different Pressure Conditions. Effects of Thermal Treatment

Zinc Selenide Optical Fibers

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