Correlation Between Refractive Index and Electronegativity Difference for A^NB^8-NType Binary Semiconductors

Abstract

A simple correlation between the high-frequency refractive index and electronegativity dierence has been established for large number of A N B 8−N type binary semiconductors. The proposed relation has been applied satisfactorily to evaluate the refractive index of binary semiconductors belonging to groups IVII, IIVI, IIIV and IVVI. The estimated values of refractive index from present relation are utilized to calculate the electronic polarizability of compounds by applying the LorentzLorentz formula. Our calculated values of refractive index and electronic polarizability are in good agreement with the values evaluated by earlier researchers.

Simplified expressions for calculating Debye temperature and melting point of II-VI and III-V semiconductors

“…It is naturally depends on several other quantities, such as the pressure, elastic constants, and other thermal quantities, such as specific heat and lattice thermal conductivity [2]. At ambient temperature and pressure, several II-VI and III-V binary semiconductors possess the cubic zincblende structure; these binary compounds have potential applications in the fields of electronic and optoelectronic devices [3]. The development of new optoelectronic materials depends mostly on the materials engineering at a practical level, and also on a good understanding of the properties of materials [4].…”

Modified expression for calculating refractive index of ANB8-N type binary semiconductors

“…The obtained values of k, C and  are listed in Table 1. The present calculated and known values of refractive index have been presented in Table 2, and compared to the Bahadur's results [11]. As shown in …”

“…Bahadur and Mishra [11] thought that the definition of the E p inequation (2) and the definition of E g in equation (1) are the same. First, they took the expression of E g from the equation (1), then they substituted it into the equation (2), finally, they obtained a relation between the refractive index n and the optical electronegativity difference * X  , their formula is given by the following expression [11]:…”

“…In order to conserve the originality of Bahadur's work [11] we follow exactly the same analysis that followed by Bahadur during the process of simplification.…”

“…Recently, some authors [11][12][13][14] have proposed models correlate the refractive index with the electronegativity difference which is a very useful parameter in understanding the nature of chemical bonding and predicting several important physical parameters. In their work, Bahadur and Mishra [11] proposed an interesting simple formula between the high-frequency refractive index and electronegativity difference, which has been established for large number of A N B 8-N type binary semiconductors (groups: I-VII, II-VI, III-V and IV-VI.). However, the authors, during the analysis of their work they did not distinguish between the two concepts of optical energy gap (E g ) and the Penn gap energy (E p ), which also called bonding-antibonding energy gap.…”