Correlation between structural and optical properties of nanocrystal particles prepared at low temperature by plasma-enhanced chemical vapor deposition

Mechanisms of the growth of nanocrystalline Si:H films deposited by PECVD

“…Furthermore, the hdi and the XRD intensity are found to become smaller and larger, respectively, as [H 2 ] increases (Figs. 1 and 2), in agreement with the results in previous articles [13][14][15]24]. of 46 sccm, a strong Raman scattering peak at around 520 cm À1 arising from the crystalline phase can be observed.…”

“…By contrast, the increase in [H 2 ] decreases hdi but increases q. The increase in q with increasing either [H 2 ] or T d is consistent with previously reported results [13][14][15]24]. The increase in hdi and q with increasing T d may be interpreted in terms of enhanced self-diffusion of Si [25].…”

“…The increase in hdi and q with increasing T d may be interpreted in terms of enhanced self-diffusion of Si [25]. On the other hand, the decrease in hdi and the increase in q with increasing [H 2 ] may be connected with an increase in the nucleation rate [13,14]. As shown in Figs.…”

“…In addition, it has been pointed out that H-radicals eliminate hydrogen from deposited silicon films at the growing surface, in order to relax the strain in Si network that occurred during crystallization of Si films [12]. On the other hand, Kim et al [13] and Milovzorov et al [14] found that; as the rate of H 2 addition to a SiH 4 /SiF 4 mixture increased, the crystalline volume fraction of the resultant polycrystalline silicon (poly-Si) films increased but the grain size decreased [13,14]. As a result, it has been suggested that the nucleation rate increases with the H 2 flow rate, [H 2 ], increases [13].…”

Origin of photoluminescence in nanocrystalline Si:H films

“…It has been reported that the enhanced nucleation on the growing surface during deposition of nc-Si can be achieved by increasing the hydrogen flow rate, [H 2 ] [51,52], or the deposition temperature, T d [53]. However, the increase in T d also caused an increase in d. Thus, the increase in [H 2 ] leads to reduction of d [51,52], while the increase in T d should lead to increase in d [53]. Furthermore, it has been reported that formation of nc-Si is due also to higher etching activity of hydrogen radicals for the amorphous phase than the crystalline one [26,27].…”