Correlation between structure, stress and deposition parameters in direct current sputtered zinc oxide films

Abstract

Zinc oxide-based transparent conductive oxide films prepared by pulsed magnetron sputtering from powder targets: Process features and film properties Stress evolution during growth in direct-current-sputtered zinc oxide films at various oxygen flows J. Appl. Phys. 98, 073514 (2005); 10.1063/1.2061888In situ measurement of mechanical stress in polycrystalline zinc-oxide thin films prepared by magnetron sputtering Al-doped zinc oxide films deposited by simultaneous rf and dc excitation of a magnetron plasma: Relationships between plasma parameters and structural and electrical film properties

Tailoring of structure formation and phase composition in reactively sputtered zirconium oxide films using nitrogen as an additional reactive gas

“…It has been reported in a number of studies that these ions have a strong influence on the structure formation of metal oxides. 9,12,13 It is therefore essential to control the fraction of the target that is covered with the oxide in order to tailor the bombardment of the growing film by high energy oxygen ions.…”

Substrate temperature dependence of growth mode, microstructure and optical properties of highly oriented zinc oxide films deposited by reactive sputtering

“…It may be recalled from earlier work [13], that the uniform strain in the films deposited below 300°C was considered intrinsic to the growth process. The intrinsic strain was attributed to the O − ions formed at the target, which may have sufficient energies to bombard the growing film [29], causing implantation, displacement or removal of surface atoms. The relatively large micro-strain present in the film deposited at 300°C is also attributed to bombardment due to O − ions.…”

Effect of O2/Ar Mixture on the Structural and Optical Properties of ZnO Thin Films Fabricated by DC Cylindrical Magnetron Sputtering

“…High kinetic energies are needed for the rearrangement of atoms on the substrate which leads to an improved crystallinity. Therefore, the films deposited at higher O 2 pressure turn amorphous [25]. Although, total reactive gas pressure has been constant in our experiments, the fabricated films produced at higher O 2 were more amorphous.…”