Correlation between the extraordinary Hall effect and resistivity

Gerber, A.; Milner, A.; Finkler, Amit; Karpovski, M.; Goldsmith, L.A.; Tuaillon-Combes, J.; Boisron, Olivier; Mélinon, P.; Pérez, A.

doi:10.1103/physrevb.69.224403

Cited by 53 publications

(33 citation statements)

References 35 publications

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“…30 Experimentally, it has been found that the scattering at the surface, in the bulk, or at the interfaces contribute to AHE in different ways. The sign of surface scattering on AHE has been found to be same as that of the bulk in Ni films, 28,29 while it is opposite to that of the bulk or interface scattering in CoAg granular films 31 and Co/Pd multilayers. 27 To identify the specific contributions to AHE, a simple scaling relation between ρ AH and ρ xx is given by where the first term is related to the skew scattering and the second to the side jump.…”

Section: B Scaling Analysis Of Surface Scattering Effectmentioning

confidence: 89%

“…As n decreases to less than 20, ρ xx dramatically increases, which should be attributed to surface scattering. 28,29 Where the change of the sign of AHE from positive to negative is accompanied with a sharp increase in the absolute magnitude |ρ AH |. These phenomena indicate that (i) the sign of AHE for surface scattering is opposite to that of the bulk; it is positive for the bulk scattering, while negative for the surface scattering, and (ii) for the multilayers with n 20, ρ AH is dominated by surface scattering.…”

Section: A Magnetization and Magnetotransport Of The As-deposited Mumentioning

confidence: 94%

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Effects of surface and interface scattering on anomalous Hall effect in Co/Pd multilayers

Zhong

Aboljadayel

et al. 2012

Phys. Rev. B

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In this paper, we report the results of surface and interface scattering on anomalous Hall effect in Co/Pd multilayers with perpendicular magnetic anisotropy. The surface scattering effect has been extracted from the total anomalous Hall effect. By scaling surface scattering contribution with ρ AH s ∼ ρ γ ss , the exponent γ has been found to decrease with the increase of surface scattering resistivity, which could account for the thickness-dependent anomalous Hall effect. Interface diffusion induced by rapid thermal annealing modifies not only the magnetization and longitudinal resistivity but also the anomalous Hall effect; a large exponent γ ∼ 5.7 has been attributed to interface scattering-dominated anomalous Hall effect.

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Section: B Scaling Analysis Of Surface Scattering Effectmentioning

confidence: 89%

Section: A Magnetization and Magnetotransport Of The As-deposited Mumentioning

confidence: 94%

Effects of surface and interface scattering on anomalous Hall effect in Co/Pd multilayers

Zhong

Aboljadayel

et al. 2012

Phys. Rev. B

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“…In general, experimental data does not fit well the predictions of the models. It was then suggested [20] that in systems with several different scattering sources, the total resistivity is not a good parameter to characterize the effect. Instead, both the EHE and resistivity should be decomposed to contributions generated by different scattering sources and the correlation for each source should be followed independently.…”

mentioning

confidence: 99%

“…Instead, both the EHE and resistivity should be decomposed to contributions generated by different scattering sources and the correlation for each source should be followed independently. Surfaces, impurities, and thermal scattering contributions, analyzed separately, were shown [20] to follow the skew scattering model regardless of the total material's resistivity. An additional mechanism connected with Berry phase and believed to take place in the absence of any scattering is also discussed [21].…”

mentioning

confidence: 99%

Perspective of Spintronics Applications Based on the Extraordinary Hall Effect

Gerber¹,

Riss²

2008

Journal of Nanoelectronics and Optoelectronics

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Extraordinary Hall effect (EHE) is a spin-dependent phenomenon that generates voltageproportional to magnetization across a current carrying magnetic film. Magnitude of the effect can be artificially increased by stimulating properly selected spin-orbit scattering events. Already achieved sensitivity of the EHE-based sample devices exceeds 1000 Ω/T, which surpasses the sensitivity of semiconducting Hall sensors. Linear field response, thermal stability, high frequency operation, sub-micron dimensions and, above all, simplicity, robustness and low cost manufacture are good reasons to consider a wide scale technological application of the phenomenon for magnetic sensors and memory devices.2 Anisotropic magnetoresistance [1,2], planar Hall effect [3,4], spin-dependent tunneling [5,6] and the extraordinary or anomalous Hall effect (EHE) [7,8] are spin-dependent electronic transport phenomena known for many years. However, it is the discovery of the giant magnetoresistance (GMR) [9,10] that gave birth to the term spintronics and triggered a world-wide outburst of the spin-related research. Extraordinary Hall Effect (EHE) in magnetic materials was discovered more than a century ago [7], extensively studied both theoretically and experimentally [8], and left out of the mainstream research for the last thirty years. The possibility to use the effect for technical applications, such as magnetic sensors and nonvolatile magnetic random access memories (MRAM), has been mentioned more than three decades ago [11], but no significant progress was reported until recently. A probable reason for this is that although EHE in bulk magnetic materials can be significantly higher than the ordinary Hall effect in normal metals, its magnitude remained far beyond the sensitivity of semiconductors and magnetic sensors based on the anisotropic magnetoresistance [12]. The renewed interest in EHE has only recently arisen when some recipes to enhance the effect were found [13][14][15].The Hall effect in magnetic materials is commonly described [8,16] by the phenomenological equationwhere ρ H is the Hall resistivity, B, H and M are components of the magnetic induction, applied field and magnetization normal to the film plane, and D is the demagnetization factor. R 0 is the ordinary Hall coefficient related to the Lorentz force acting on moving charge carriers. R EHE , the extraordinary Hall coefficient, is associated with a break of the right-left symmetry at spin-orbit scattering in magnetic materials.. Demagnetization factor D is equal to 1 when field is applied perpendicular to a homogeneous magnetic film. In this case Eq.1 is simplified toVoltage measured between Hall contacts located perpendicular to the direction of an electric current is given by:where I is current and t thickness of the film. Fig.1 presents a typical field dependence of the Hall resistance (in a 4 nm thick Ni film at room temperature with field applied normal to the film plane.Magnetization normal to the film increases with field till saturation at about ±0.2 T. The EH...

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“…3,27 Recent experiments also suggested that magnons always give much smaller contribution to AHE in type of skew scattering than phonons. 28 Therefore, it is reasonable to consider the qualitative difference in various contributions to skew scattering and describe AHE resisitivity as…”

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confidence: 99%

Anomalous Hall effect in epitaxialL10-Mn1.5Ga films with variable chemical ordering

2014

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Abstract： The transport behaviors of weak localization and anomalous Hall effect (AHE) in perpendicularly magnetized L1 0 -Mn 1.5 Ga single-crystalline films are investigated as a function of degree of long-range chemical ordering and temperature. We observed significant weak localization and metal-insulator transition in highly disordered films. Our results provide new evidence that weak localization, phonons and magnons have negligibly smaller effect on extrinsic AHE resistivity than static defects for all the chemical disordered films, the overlook of which in conventional scaling laws may result in significant discrepancies and exponent n beyond 2 when fitting the data. Chemical disorder is found to exhibit strong tailoring effect on both intrinsic and extrinsic σ AH . Our results clarify the role of weak localization, phonons and magnons in AHE and offer a technological engineering approach of the AHE by altering long-range chemical ordering parameter of magnetic materials. Key words：Weak localization, Anomalous Hall effect, Chemical disorder, Perpendicular magnetic anisotropy, PACS: 72.15. Rn, 81.30.Hd, 75.30.Gw a) Author to whom correspondence should be addressed; Electronic mail: jhzhao@red.semi.ac.cnThe anomalous Hall effect (AHE) has attracted much attention due to both the fascinating underlying physics and the great application potential in sensors, memories and logics. [1][2][3][4][5][6][7][8] It is widely accepted that there are three mechanisms responsible for the AHE. The intrinsic AHE arises from the transverse velocity of the Bloch electrons induced by SOI and interband mixing, 9 as experimentally evidenced by quantum anomalous Hall effect. 10 The extrinsic mechanisms of skew scattering and side jump result from the impurity scattering of conduction electrons due to SOI. 11,12 Skew scattering yields a scaling relation between longitudinal resistivity ρ xx (conductivity σ xx =1/ρ xx ) and anomalous Hall resistivity ρ AH (conductivity σ AH ≈ρ AH /ρ xx 2 ) as ρ AH~ρxx , while other two mechanisms give ρ AH~ρxx 2 . Accordingly, scaling laws ρ AH~ρxx n and ρ AH =aρ xx +bρ xx 2 are conventionally used to describe the experimental data.In spite of the extensive studies, a unified scaling of AHE has remained a shortage. In stark contrast to present AHE theories, the exponent n was experimentally observed to be below 1 or beyond 2 in a variety of ferromagnets, e.g. 0.4 in hopping transport-accompanied Fe 3 O 4 films, 13 2.7 (2.85) in (111)-orientated Mn 2.03 Ga (Mn 1.38 Ga) films, 14 2.6 in Fe/Cr multilayers 15 and 3.7 in Co-Ag granular films. 16 Electron localization was recently found to yield a scaling with n=0 in chemically disordered FePt ultrathin films. 17 Noticeably, recent studies in Fe films revealed a negligible contribution of phonon skew scattering and a scaling ρ AH =a 0 ρ xx0 +bρ xx 2 , where a 0 ρ xx0 = α 0 ρ xx0 +βρ xx0 2 is the extrinsic contributions of skew scattering and side jump from static defects. 3 These intriguing observations make the scaling of AHE open questions. On the o...

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Correlation between the extraordinary Hall effect and resistivity

Cited by 53 publications

References 35 publications

Effects of surface and interface scattering on anomalous Hall effect in Co/Pd multilayers

Effects of surface and interface scattering on anomalous Hall effect in Co/Pd multilayers

Perspective of Spintronics Applications Based on the Extraordinary Hall Effect

Anomalous Hall effect in epitaxialL10-Mn1.5Ga films with variable chemical ordering

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