Correlation between the microscopic and macroscopic characteristics of SnO2 thin film gas sensors

Lopes, Andreia; Fortunato, Elvira; Nunes, Patrı́cia; Vilarinho, Paula M.; Martins, Rodrigo

doi:10.1016/s1466-6049(01)00160-x

Cited by 7 publications

(3 citation statements)

References 5 publications

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“…5 Over the time, tin (IV) oxide (SnO 2 ) proved to be the most widely used semiconductor oxide gas sensor which can detect a wide range of pollutant gases. [6][7][8][9][10] The sensing mechanism of tin (IV) oxide, being an n-type semiconductor, is based on resistance changes if it is exposed to oxidizing or reducing gases. A major drawback of SnO 2 and metal oxide-based gas sensors is the lack of selectivity, which limits its further applications when each gas must be detected in a mixture of gases.…”

Section: Introductionmentioning

confidence: 99%

Preparation and characterization of SnO2 and Cu-doped SnO2 thin films using electrostatic spray deposition (ESD)

Ghimbeu

Landschoot

Schoonman

et al. 2007

Journal of the European Ceramic Society

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Section: Introductionmentioning

confidence: 99%

Preparation and characterization of SnO2 and Cu-doped SnO2 thin films using electrostatic spray deposition (ESD)

Ghimbeu

Landschoot

Schoonman

et al. 2007

Journal of the European Ceramic Society

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“…In the undoped form, this compound exhibits n-type conductivity, due to oxygen vacancies and interstitial tin atoms, generated during sample processing. Over the time, SnO 2 proved to be the most widely used semiconductor oxide gas sensor which can detect a wide range of pollutant gases [5,6]. A major drawback of SnO 2 and metal oxide-based gas sensors is the lack of selectivity, which limits its further applications when each gas must be detected in a mixture of gases.…”

Section: Introductionmentioning

confidence: 99%

First-Principles and Experimental Study on Cu Doped SnO<sub>2</sub> Structure

Shan

Han

2013

AMM

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SnO2 and Cu-SnO2 thin films were fabricated by the sol-gel method. The influence of annealing temperature and copper addition on the morphology and microstructure of the films was studied using X-ray diffraction (XRD) and UV-Visible, respectively. The results show that the tetragonal rutile phase is evidenced by XRD with no other phases observed. The crystallinity of SnO2 and Cu-SnO2 thin films had been improved with the increasing annealing temperature. The grain size decreased after Cu doping. On theoretical, Pure and Cu-SnO2 were calculated by first-principles full potential linearized augmented plane wave ultra-soft pseudo-potential method to investigate band structure.

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“…Hall measurements have been employed to probe the surface chemical interactions induced changes in the physical quantities under in-situ sensing conditions. [15][16][17][18][19] Sanjines et al used Hall measurement studies on SnO 2 thick film toward hydrogen and measured the changes in conductivity, carrier concentration and carrier mobility of the film. Ogawa et al also carried out Hall voltage measurements on ultra fine SnO 2 thin film in the presence of ethanol and discussed the variation of the carrier mobility with increase in concentration of ethanol.…”

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confidence: 99%

Changes in Carrier Concentration and Debye Length: Experimental Evidence from van der Pauw Hall Measurements on NO_xSensing of In₂O₃

Prabhu

Gnanasekar

Ravindran

et al. 2014

J. Electrochem. Soc.

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Changes in conductivity, carrier concentration and mobility of In 2 O 3 thin film on exposure to NO x at different temperatures were measured using van der Pauw technique. The species responsible for these changes were probed by laser Raman spectroscopic technique. The direct correlation between the adsorbed species and the observed changes in the electrical properties of In 2 O 3 thin film toward NO x as a function of temperature had been elucidated.Among various metal oxides, SnO 2 , WO 3 and In 2 O 3 are well known semi-conductors for gas sensing applications. 1-9 Their gas sensing action and signal transduction mechanism are still the subjects of interest to many research teams. 10-14 As the gas sensing action is being a surface phenomenon, probing the changes in conductivity and carrier concentration in presence of trace levels of the pollutant gas is expected to provide a meaningful insight into the mechanism of the gas sensing. Hall measurements have been employed to probe the surface chemical interactions induced changes in the physical quantities under in-situ sensing conditions. [15][16][17][18][19] Sanjines et al used Hall measurement studies on SnO 2 thick film toward hydrogen and measured the changes in conductivity, carrier concentration and carrier mobility of the film. Ogawa et al also carried out Hall voltage measurements on ultra fine SnO 2 thin film in the presence of ethanol and discussed the variation of the carrier mobility with increase in concentration of ethanol. In the present investigations, In 2 O 3 thin films with granular morphology are employed and the changes in the physical quantities upon exposure to NO x (mixture of NO and NO 2 ) are probed by Hall voltage measurements using van der Pauw technique. The details of these experiments and the results obtained are presented in this paper. ExperimentalThin films of In 2 O 3 were deposited on 10 × 10 mm polished alumina substrates by pulsed laser deposition. A KrF laser (M/s Lumonics, Canada) operating at a wavelength of 248 nm with repetition rate of 10 Hz and a fluence of ∼5 J/cm 2 was used for this purpose. In 2 O 3 targets for deposition were made from the high purity powders of In 2 O 3 (99.9%, M/s Aldrich, USA). The powders were pelletized into disks of 15 mm diameter and ∼ 3 mm thickness and then sintered at 1273 K for about 48 h in air. The temperature of the substrate was maintained at 773 K during film deposition under an oxygen partial pressure of about 2 × 10 −1 mbar. Prior to the film deposition on the substrate, gold electrical pads were screen printed on four corners of the substrate for four probe measurements. The substrate to target distance was maintained at 4.5 cm and the deposition was carried out for 20 min. The deposited thin films were analyzed by X-ray diffraction using model D 500, M/s Siemens, Germany. The thickness of In 2 O 3 thin films was measured using profilometer Dektak 3 of M/s Veeco, USA. The morphology of the films was studied using Atomic Force Microscope model Solver Pro, M/s NT -MDT, Russia.Hall ...

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Correlation between the microscopic and macroscopic characteristics of SnO2 thin film gas sensors

Cited by 7 publications

References 5 publications

Preparation and characterization of SnO2 and Cu-doped SnO2 thin films using electrostatic spray deposition (ESD)

Preparation and characterization of SnO2 and Cu-doped SnO2 thin films using electrostatic spray deposition (ESD)

First-Principles and Experimental Study on Cu Doped SnO<sub>2</sub> Structure

Changes in Carrier Concentration and Debye Length: Experimental Evidence from van der Pauw Hall Measurements on NO_xSensing of In₂O₃

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Correlation between the microscopic and macroscopic characteristics of SnO2 thin film gas sensors

Cited by 7 publications

References 5 publications

Preparation and characterization of SnO2 and Cu-doped SnO2 thin films using electrostatic spray deposition (ESD)

Preparation and characterization of SnO2 and Cu-doped SnO2 thin films using electrostatic spray deposition (ESD)

First-Principles and Experimental Study on Cu Doped SnO<sub>2</sub> Structure

Changes in Carrier Concentration and Debye Length: Experimental Evidence from van der Pauw Hall Measurements on NOxSensing of In2O3

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Changes in Carrier Concentration and Debye Length: Experimental Evidence from van der Pauw Hall Measurements on NO_xSensing of In₂O₃