2023
DOI: 10.1007/s10854-022-09537-3
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Correlation of 2D-interface defect density and electrical parameters of a GZO/p-Si heterojunctions: application to three surface morphologies

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“…Thus, we obtain E g = 3.30 eV for ZnO and E g = 3.64 eV for the phase Zn 9 Ga 2 O 12 . The latter was obtained by a sputtering method with similar gap value 28 …”
Section: Resultsmentioning
confidence: 99%
“…Thus, we obtain E g = 3.30 eV for ZnO and E g = 3.64 eV for the phase Zn 9 Ga 2 O 12 . The latter was obtained by a sputtering method with similar gap value 28 …”
Section: Resultsmentioning
confidence: 99%