Correlation of a Bipolar-Transistor-Based Neutron Displacement Damage Sensor Methodology With Proton Irradiations

Tonigan, Andrew M.; Arutt, Charles N.; Parma, Edward J.; Griffin, Patrick J.; Fleetwood, D.M.; Schrimpf, R.D.

doi:10.1109/tns.2017.2774759

Cited by 6 publications

(1 citation statement)

References 21 publications

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“…The gain is higher than that previously reported [1,[39][40][41]. The device with high gain is of interest for ensuring the effective operation of the SiGe HBT within an amplification circuit [42][43][44]. It also contributes to functions such as control, linearity, sensitivity and sensing, noise reduction and other aspects of applications [44,45].…”

Section: Sige Hbt Structure and Physical Modelsmentioning

confidence: 91%

Simulation and analysis of inverse-mode operation of single event transient mechanisms on NPN-SiGe HBT

Adekoya,

Liu,

Wang

et al. 2024

Phys. Scr.

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This paper presents single-event transient (SET) mechanisms on a 3D NPN-SiGe HBT structure using Silvaco TCAD simulations under three conditions. The three conditions were the linear energy transfer (LET), striking angle, and bias voltage. A three-dimensional (3D) structure of the NPN-SiGe HBT was built on the DevEdit simulator and simulated on Deckbuild using device and radiation effect simulations. The length, breadth, and height of the structure were; 6.0 µm, 4.55 µm, and 2.5 µm, with doping concentrations of cm3 and cm3. The results obtained show that the TCAD simulation on the three conditions significantly influences the trends of heavy ion transient current and collected charge. The results reveal that the increased collected charge and wider pulse width result from the bipolar amplification effect. The drift and diffusion mechanisms also influence the increase in the emitter current as the ion loses energy along the trajectory path.

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