Correlation of lattice distortion with optical and electrical properties of In2O3:Sn films

Mergel, Dieter; Qiao, Zhongliang

doi:10.1063/1.1704852

Cited by 80 publications

(40 citation statements)

References 27 publications

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“…Neutral shallow-impurity scattering is often discussed in papers about transport in TCO films at room temperature [17,18]. The mobility due to neutral impurity scattering was first derived by Erginsoy [19] who scaled the electron scattering at hydrogen atoms to a semiconductor by using its dielectric constant and carrier effective mass, which leads to :…”

Section: Ionized Impurity Scatteringmentioning

confidence: 99%

Carrier transport in polycrystalline transparent conductive oxides: A comparative study of zinc oxide and indium oxide

Ellmer

Mientus²

2008

Thin Solid Films

336

191

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Highly-doped indium-tin oxide films exhibit resistivities ρ as low as 1. . Thus the grain barrier trap densities of ZnO and ITO are significantly different, which seems to be connected with the defect chemistry of the two oxides and especially with the piezoelectricity of zinc oxide.Keywords Transparent conductive oxides, carrier transport, degenerate semiconductors, grain barriers, electron mobility 2 Therefore, in the present study the carrier transport processes in ITO and ZnO are compared in order to get a deeper understanding of the differences between these TCO materials. For this purpose conductivity and Hall mobility measurements on ZnO:Al and ITO films were undertaken for films deposited on amorphous as well as single crystalline substrates (sapphire) in order to determine the dominant scattering processes (ionized impurities, grain barriers, crystallographic defects). Our own data are compared with literature data reported for ZnO and ITO to show the general trends. Theoretical and semiempirical models are used to fit the experimental data and to derive characteristic material parameters for these three oxides. Introduction Theoretical modelsThe theoretical models on ionized impurity scattering were already reviewed in 2001 by one of the authors when estimating the mobility limit of highly-doped zinc oxide [3]. In the following a short summary is given to lay the basis for the further discussion.Ionized impurity scattering. This scattering process is caused by ionized dopant atoms and dominates for carrier concentrations above about 10 19 cm -3. An analytical expression for the mobility µ ii of degenerately doped semiconductors, taking into account the non-parabolicity of the conduction band, was given by Zawadzki [7] and refined by Pisarkiewicz et al. [6]:where the screening functionwith the parameter ξ np =1-m 0 */m*, which describes the non-parabolicity of the conduction band (m*, m 0 * -effective masses in the conduction band and at the conduction band edge, 4 respectively). The prefactor in equ. (1) The fit parameters µ max , µ min and µ min -µ 1 describe the lattice mobility at low carrier concentrations, the mobility limited by ionized impurity scattering and the clustering mobility, discussed above (see Table 2). . The ZnO mobility values were fitted using the empirical formula (3) and the fit parameters are summarized in Table 2 together with the corresponding values for silicon. In the transition region from lattice to ionized scattering for 5 . 10 16 < N < 5 . 10 18 cm -3 a large scattering of the experimental ZnO data can be observed. Therefore, the data have been fitted in analogy to the silicon data, which exhibit a much higher accuracy [14].However, the exact transition does not influence the conclusions much since we are interested predominantly in ionized impurity scattering in the region N > 10 19 cm -3 .5 Neutral impurity scattering. Neutral shallow-impurity scattering is often discussed in papers about transport in TCO films at room temperature [17,18]. The mobility due to ...

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Section: Ionized Impurity Scatteringmentioning

confidence: 99%

Carrier transport in polycrystalline transparent conductive oxides: A comparative study of zinc oxide and indium oxide

Ellmer

Mientus²

2008

Thin Solid Films

336

191

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“…However, the optically measured carrier concentration and mobility usually differ from those obtained by electrical measurements. This difference can be explained by a microstructure with pronounced grain boundaries which impedes the dc conductivity [24].…”

Section: Introductionmentioning

confidence: 99%

High quality ITO thin films grown by dc and RF sputtering without oxygen

Tuna

Selamet

Aygün

et al. 2010

J. Phys. D: Appl. Phys.

278

131

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High quality indium tin oxide (ITO) thin films were grown without oxygen by both dc and RF magnetron sputtering techniques on glass substrates. The effects of substrate temperature, film thickness and sputtering method on the structural, electrical and optical properties of the as-grown films were investigated. The results showed that the substrate temperature had substantial effects on the film properties, in particular on the crystallization and resistivity. When the substrate temperature was increased to 150 • C, crystallization in the (2 2 2) plane started appearing for both dc and RF sputtered films. We additionally found that with further increments of substrate temperature, the preferred crystallization orientation changed differently for dc and RF sputtered films. Optical transmission in the visible region for a film thickness of 70 nm was found to be above 85%. The bandgap was calculated to be about 3.64 eV for the substrate temperature of 150 • C for a 70 nm thick film. The value of the bandgap increased with respect to the increment in film thickness as well as substrate temperature. We also measured the temperature dependence of the resistivity and Hall coefficient of the films, and calculated the carrier concentration and Hall mobility. Very low room temperature resistivities for dc and RF magnetron sputtered grown films of about 1.28 × 10 −4 cm and 1.29 × 10 −4 cm, respectively, were obtained.

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“…high values of the extinction coefficients), while the minimum extinction coefficient was found with an O 2 flow rate of about 0.6 sccm. For the electrical resistivity (see Figure 1b), we notice that regardless of the O 2 flow rate during deposition the inert annealing process consistently improves the electrical conductivity of the film probably by minimizing grain boundary defects in the films [26]. However, when the oxygen flow rate increases, the electrical performance of annealed samples shows a monotonic increase in their resistivity.…”

Section: Thick Ito Filmsmentioning

confidence: 99%

Spectroelectrochemical properties of ultra-thin indium tin oxide films under electric potential modulation

Han

Mendes

2016

Thin Solid Films

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In this work, the spectroscopic properties of ultra-thin ITO films are characterized under an applied electric potential modulation. To detect minute spectroscopic features, the ultra-thin ITO film was coated over an extremely sensitive single-mode integrated optical waveguide, which provided a long pathlength with more than adequate sensitivity for optical interrogation of the ultra-thin film. Experimental configurations with broadband light and several laser lines at different modulation schemes of an applied electric potential were utilized to elucidate the nature of intrinsic changes. The imaginary component of the refractive index (absorption coefficient) of the ultra-thin ITO film is unequivocally shown to have a dependence on the applied potential and the profile of this dependence changes substantially even for wavelengths inside a small spectral window (500–600 nm). The characterization technique and the data reported here can be crucial to several applications of the ITO material as a transparent conductive electrode, as for example in spectroelectrochemical investigations of surface-confined redox species.

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Correlation of lattice distortion with optical and electrical properties of In2O3:Sn films

Cited by 80 publications

References 27 publications

Carrier transport in polycrystalline transparent conductive oxides: A comparative study of zinc oxide and indium oxide

Carrier transport in polycrystalline transparent conductive oxides: A comparative study of zinc oxide and indium oxide

High quality ITO thin films grown by dc and RF sputtering without oxygen

Spectroelectrochemical properties of ultra-thin indium tin oxide films under electric potential modulation

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