Correlation of Nano Edge Roughness in Resist Patterns with Base Polymers

Abstract

Stability conditions for a class of anisotropically inflating solutions in the Bianchi type II background space are shown explicitly in this paper. These inflating solutions were known to break the cosmic no-hair theorem such that they do not approach the de Sitter universe at large times. It can be shown that unstable modes of the anisotropic perturbations always exist for this class of expanding solutions. As a result, we show that these set of anisotropically expanding solutions are unstable against anisotropic perturbations in the Bianchi type II space.

Radiation Chemistry in Chemically Amplified Resists

“…Since the early stages of this research, the effects of polymer properties have been investigated. The sizes of molecules (molecular weight or gyration radius), 12,13) molecular dispersion, 14,15) and rigidity 16) have been reported as causes of LER, particularly from the viewpoint of dissolution phenomena (development). These factors obviously affect LER because a polymer molecule is a minimum block for dissolution.…”

Monte Carlo Simulation of SEM and SAM Images

“…Among them, however, the influence of the side wall roughness, the line edge roughness (LER) or the line width roughness (LWR), to CDs has rarely been included in a theoretical calculation because of the complexity of constructing a reasonable rough surface model. The LER or the LWR can degrade resolution and linewidth accuracy (Yoshimura et al, 1993) and cause fluctuation of transistor performance (Asenov et al, 2003;Croon et al, 2002;Diaz et al, 2001;Ercken et al, 2002;Hamadeh et al, 2006;Kaya et al, 2001;Kim et al, 2004a;Kim et al, 2004b;Linton et al, 1999;Linton et al, 2002;Oldiges et al, 2000;Xiong & Bokor, 2002;Yamaguchi et al, 2003;Yamaguchi et al, 2004). It becomes a critical issue when the CDs for semiconductor devices shrink into few tens nanometers (ITRS, 2007;Gwyn et al, 2003) because the roughness on the edge of the line does not scale with the linewidth (Asenov et al, 2003).…”

DUV Interferometry for Micro and Nanopatterned Surfaces

“…However, sensitivity is a parameter of importance for practical applications due to the necessity to achieve short exposure times. Line width roughness (LWR) and line edge roughness (LER), measuring the deviation from an atomically smooth surface have also become new parameters preventing the feasibility of smaller feature sizes (Yoshimura et al, 1993). These material requirements for the next generations of DUV lithography have justified the recent efforts to develop innovative photoresists.…”