Correlation of p-doping in CVD Graphene with Substrate Surface Charges

Goniszewski, Stefan; Adabi, Mohammad; Shaforost, Olena; Hanham, Stephen M.; Líu, Hao; Klein, N.

doi:10.1038/srep22858

Cited by 90 publications

(77 citation statements)

References 27 publications

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“…To generate TFSI self‐organized molecular ions on the GFET channel, a droplet of BMP‐TFSI ionic liquid was casted on the GFET channel for a few hours for the self‐organized TFSI interfacial layer to form. It results in uniform p‐doping to the GFET channel (Figure c) . Rinsing with isopropyl alcohol (IPA) can remove TFSI molecules partially since the TFSI molecules attach on the GFET surface via a weak van der Waals force (Figure d).…”

Section: Resultsmentioning

confidence: 99%

Lateral Graphene p–n Junctions Realized by Nanoscale Bipolar Doping Using Surface Electric Dipoles and Self‐Organized Molecular Anions

Zhang

Gong

et al. 2018

Adv Materials Inter

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Lateral p–n junctions take the unique advantages of 2D materials, such as graphene, to enable single‐atomic layer microelectronics. A major challenge in fabrication of the lateral p–n junctions is in the control of electronic properties on a 2D atomic sheet with nanometer precision. Herein, a facile approach that employs decoration of molecular anions of bis‐(trifluoromethylsulfonyl)‐imide (TFSI) to generate p‐doping on the otherwise n‐doped graphene by positively polarized surface electric dipoles (pointing toward the surface) formed on the surface oxygen‐deficient layer “intrinsic” to an oxide ferroelectric back gate is reported. The characteristic double conductance minima V Dirac− and V Dirac + illustrated in the obtained lateral graphene p–n junctions can be tuned in the range of −1 to 0 V and 0 to +1 V, respectively, by controlling the TFSI anions and surface dipoles quantitatively. The unique advantage of this approach is in adoption of polarity‐controlled molecular ion attachment on graphene, which could be further developed for various lateral electronics on 2D materials.

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Section: Resultsmentioning

confidence: 99%

Lateral Graphene p–n Junctions Realized by Nanoscale Bipolar Doping Using Surface Electric Dipoles and Self‐Organized Molecular Anions

Zhang

Gong

et al. 2018

Adv Materials Inter

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“…[28][29][30][31][32][33][34][35][36] Very recently, there are several reports providing some interesting results indicating that the resistance of graphene can be decreased by using UVO treatment on the traditional SiO 2 substrate. [37][38][39] Most of the researches focus on the effect of graphene on SiO 2 substrate or the wavelength of the utilized UV light for generation ozone molecules. However, various applications of graphene pose different requirements on the substrates, e.g.…”

Section: Page 1 Of 8 Rsc Advancesmentioning

confidence: 99%

Substrate-dependent resistance decrease of graphene by ultraviolet-ozone charge doping

et al. 2016

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a Large sheet resistance is the critical problem of graphene for application in the electronic and optoelectronic devices as transparent electrodes. Ultraviolet/Ozone (UVO) treatment is a convenient, highly effective, vacuum process and postclean free method. This paper reveals that the effect of UVO treatment on resistance of graphene is substrate dependent, which means that the band gap and photogenerated charge carriers of the substrates under UV irritation play a key role in the doping effect. The resistance of graphene can be decreased by as much as 80% on F8BT, GaN and PTFE substrates, by 70% on PMMA substrate, by 50% on paraffin and glass substrates. Large band gap substrate (> hν) will induce p-doping effect, while small band gap substrate (< hν) with plenty of photogenerated free charge carriers will induce n-doping effect. This approach will have great impact on practical application of graphene in electronic and optoelectronic device fabrication.

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“…It causes the charge neutrality point (Dirac point) to shift towards a positive direction. Gonisewski et al have reported that CVD graphene is inherently p-doped due to the adsorbates in contact with graphene [41]. The GFET output characteristics are shown in figure 7(b).…”

Section: Gfet Characterizationmentioning

confidence: 99%

Nonlinear optical absorption and asymmetric charge carrier conduction in chemical vapor deposited single-layer graphene

Thomas

Nalini

Jayaraj

et al. 2020

Mater. Res. Express

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In this work, we report the nonlinear optical absorption and asymmetric charge carrier conduction in single layer graphene films deposited by chemical vapor deposition (CVD) technique on copper foils with pretreated surface. XRD texture and pole figure analysis of the substrate are utilized for the visualization of the effect of the pretreatment on the substrate. The synthesised graphene is employed as a channel layer in a back gated field-effect transistor and the asymmetric behavior of charge carriers is analyzed. Nonlinear optical response of graphene is recorded after transferring it onto a quartz substrate. Open aperture Z-scan technique yields a nonlinear absorption coefficient of 5.34×10 6 cm GW −1 . The film exhibits saturable absorption in the visible range with a saturation intensity as low as 0.134 GW cm −2 .

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Correlation of p-doping in CVD Graphene with Substrate Surface Charges

Cited by 90 publications

References 27 publications

Lateral Graphene p–n Junctions Realized by Nanoscale Bipolar Doping Using Surface Electric Dipoles and Self‐Organized Molecular Anions

Lateral Graphene p–n Junctions Realized by Nanoscale Bipolar Doping Using Surface Electric Dipoles and Self‐Organized Molecular Anions

Substrate-dependent resistance decrease of graphene by ultraviolet-ozone charge doping

Nonlinear optical absorption and asymmetric charge carrier conduction in chemical vapor deposited single-layer graphene

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