Correlation of Telemetered Solar Array Data With Particle Detector Data On GPS Spacecraft

Messenger, S.; Jackson, Edward M.; Warner, Jeffrey H.; Walters, R.J.; Cayton, T. E.; Chen, Yue; Friedel, R.; Kippen, R. M.; Reed, Barbara M.

doi:10.1109/tns.2011.2172957

Cited by 27 publications

(21 citation statements)

References 17 publications

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“…The data for the different electron energies do not collapse into a single, characteristic degradation curve. The RF data are expected to follow a logarithmic degradation curve with the three fitting parameters A , C , and D c r i t .

R F = A - C normal l o g ((), 1 + \frac{D_{d}}{D_{c r i t}})

D c r i t is the critical DDD value where the RF starts to follow an inverse logarithmic dependence on DDD.…”

Section: Data Fittingmentioning

confidence: 99%

Degradation fitting of irradiated solar cells using variable threshold energy for atomic displacement

Salzberger

Nomayr

Lugli

et al. 2017

Progress in Photovoltaics

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Characteristic degradation curves for proton and electron induced degradation of triple junction (3J) and isotype Ga0.5In0.5P/GaAs/Ge solar cells were obtained. The displacement damage dose methodology in combination with a varying effective threshold energy for atomic displacement Td,eff was used to analyze 3G28 and 3G30 3J cell data. The nonionizing energy loss (NIEL) was calculated analytically, and Td,eff was explicitly introduced as a fit parameter. Using the GaAs NIEL in fitting the 3J degradation data, a Td,eff of 21 eV was determined, whereas a Td,eff of 36 eV was found using the Ga0.5In0.5P NIEL. In GaAs and Ga0.5In0.5P single junction cells, the effective threshold energies for atomic displacement of 22 and 34 eV were determined. Copyright © 2017 John Wiley & Sons, Ltd.

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R F = A - C normal l o g ((), 1 + \frac{D_{d}}{D_{c r i t}})

D c r i t is the critical DDD value where the RF starts to follow an inverse logarithmic dependence on DDD.…”

Section: Data Fittingmentioning

confidence: 99%

Degradation fitting of irradiated solar cells using variable threshold energy for atomic displacement

Salzberger

Nomayr

Lugli

et al. 2017

Progress in Photovoltaics

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“…6 shows some results using this option for the GPS radiation environment shown in Fig. 4 [15]. Calculations were performed separately for trapped protons, solar event protons, and trapped electrons and then combined to get the total DDD-depth curve for this mission.…”

Section: A Shieldddose Optionmentioning

confidence: 99%

“…In Fig. 7b, the remaining short current as a function of time in orbit for GPS SVN41 is calculated for over 9 years on orbit [15]. On-orbit radiation dosimetry data using BDD-IIR detectors fabricated by Los Alamos National Laboratory (LANL) were spectrally inverted to produce electron and proton energy spectra in daily increments.…”

Section: B Multispectrum Input Optionmentioning

confidence: 99%

“…Fig. 7b shows some example results using the electron energy spectrum data derived from on-orbit dosimetry measurements onboard GPS service vehicle 41 (2000-present) transported through a multilayered shielding stack (10 mils CMX coverglass and 2 mils of adhesive) for silicon solar cells to produce short-circuit current degradation as a function of time on orbit [15]. In Fig.…”

Section: B Multispectrum Input Optionmentioning

confidence: 99%

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Advancements to SCREAM: Multiple spectrum input and ShielDDDose options

Messenger

Jackson

Warner

et al. 2012

2012 38th IEEE Photovoltaic Specialists Conference

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“…Recent evidence has suggested that electron NIEL may deviate significantly from existing models [3][4][5]. However, new models that correctly predict the damage at low electron energies can greatly overestimate the damage at higher energies.…”

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confidence: 95%

Validation of NIEL for >1MeV electrons in silicon using the CCD47-20

et al. 2016

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For future space missions that are visiting hostile electron radiation environments, such as ESA's JUICE mission, it is important to understand the effects of electron irradiation on silicon devices. This paper outlines a study to validate and improve upon the Non-Ionising Energy Loss (NIEL) model for high energy electrons in silicon using Charge Coupled Devices (CCD), CMOS Imaging Sensors (CIS) and PIPS photodiodes. Initial results of radiation effects in an e2v technologies CCD47-20 after irradiation to 10 krad of 1 MeV electrons are presented with future results and analysis to be presented in future publications.

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Correlation of Telemetered Solar Array Data With Particle Detector Data On GPS Spacecraft

Cited by 27 publications

References 17 publications

Degradation fitting of irradiated solar cells using variable threshold energy for atomic displacement

Degradation fitting of irradiated solar cells using variable threshold energy for atomic displacement

Advancements to SCREAM: Multiple spectrum input and ShielDDDose options

Validation of NIEL for >1MeV electrons in silicon using the CCD47-20

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