Correlation of the anisotropic etching of single−crystal silicon spheres and wafers

Weirauch, D. F.

doi:10.1063/1.321787

Cited by 57 publications

(25 citation statements)

References 6 publications

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“…Even for KOH soluti:ons at a higher etch temperature (60~ the etch-rate dependence on boron concentration is different from that obtained for EPW solutions (11). It is also well known that the magnitude and orientation dependence of etch rate of lightly doped silicon in KOH solutions (26) is different from that in EPW solutions (8). Consequently, the rate-determining reaction may be different for the two solutions, even though the main solution constituents believed to be responsible for etching (OH-and H20) are the same.…”

Section: Discussionmentioning

confidence: 96%

(100) Silicon Etch‐Rate Dependence on Boron Concentration in Ethylenediamine‐Pyrocatechol‐Water Solutions

Raley

Sugiyama

Duzer

1984

J. Electrochem. Soc.

100

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The (100) silicon etch-rate dependence on boron concentration in ethylenediamine-pyrocatechol-~ater (EPW) solutions at 110~ has been measured by successive etching of boron-diffused silicon. The etch rate begins to decrease near 10'9cm -3 and decreases approximately as the fourth power of doping over three orders of magnitude in etch rate. The etch-rate ratio between heavily and lightly doped silicon appears insensitive to pyrazine concentration from 0.01 to 6.0g/liter E, oxygen exposure of the etch solution, and light. The etch-rate decrease is sensitive to hole concentration and not to atomic concentration of boron or stress. The etch-rate dependence may be explained by assuming that the hydrogen-evolution cathodic half-reaction of the oxidation-reduction reaction is the rate-determining step. The reason for the etch-rate decrease as the hole concentration increases is given in terms of increased Auger recombination of large numbers of electrons chemically produced at the silicon surface during etching. Excellent agreement with experiment is obtained. Similarities of this etch system and the phenomenon of silicon staining are discussed in terms of oxidation-reduction reactions. Application to control of thickness and uniformity of boron-doped silicon membranes is discussed.Boron-doped silicon membranes have been fabricated using ethylenediamine-pyrocatechol-water (EPW) etching solutions for a variey of purposes: as thin substrates to reduce backscattering in electron (1) or ion beam lithography (2), to reduce scattering of transmitted radiation in x-ray lithography (3), as thin highly doped barriers for Josephson junctions or super-Schottky diodes (4), as ink-jet nozzles (5), and for the fa~iqation of micromechanical beams used in accelerometers (6, 7). In almost all cases, boron diffusions are used to stop the EPW-etchant attack on silicon. Thus far, there has been very little work reported on the etch-rate dependence on boron or on the basic etchant system itself. Finne and Klein (8) first reported the etchant but did not find any etchrate dependence up to 8 • 1017 cm -3 boron. It was reported later that the etchant stopped at 7 • 1019 cm -3 (9), but there was no detailed measurement of the transition region. Reisman et al. (10) discovered the effect of pyrazine and oxygen-induced benzoquinone catalysts on the etch rate for lightly doped silicon in EPW solutions. This is important, since the pyrazine and quinone concentration in commercially available ethylenediamine and pyrocatechol, respectively, varies from lot to lot. They briefly report the etch-rate dependence on boron in bulk silicon wafers at two levels of heavy doping for high pyrazine/low benzoquinone etch solutions and find the etch rate to be small but finite in the 102o cm -3 range. Seidel and Csepregi (11) reported a stronger etch-rate dependence on doping in epitaxial layers than that reported by Reisman et al. They used a similar etch solution, except with somewhat lower pyrazine concentration and unknown benzoquinone content. Initial experime...

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Section: Discussionmentioning

confidence: 96%

(100) Silicon Etch‐Rate Dependence on Boron Concentration in Ethylenediamine‐Pyrocatechol‐Water Solutions

Raley

Sugiyama

Duzer

1984

J. Electrochem. Soc.

100

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“…If greatly overetched, the knife-edge emitter will eventually shrink to become a cone-shape emitter Another anomalous etching result appears in slow-etching planes). According to the usual anisotropic etching characteristics [14,31] , the planes should be (-1,1,2) and (1,-1,-2) surfaces. This etching process is schematically shown in Fig.…”

Section: Isotropic Wet Etchingmentioning

confidence: 99%

“…Strong preferential etching is observed, and an array of very sharp knife edges are formed between the two fast-etching (110) planes of silicon. According to the anisotropic etching characteristics [14,31] which comes from the important parameters in orientation-dependent etching of silicon (i.e. the lattice packing density and available bonds in the crystallographic plane), the planes should be (-1,1,0) and…”

Section: Isotropic Wet Etchingmentioning

confidence: 99%

A study of emitter formation by various etching techniques and its application to flat panel display

Lee

Huang

1995

Journal of the Chinese Institute of Engineers

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In view of the potential advantages of using field-emission cathodes as electron sources, a renewed interest in advanced IC technology utilizing silicon-based coldcathode microelectronics is emerging. However, some etching results concerning emitter formation are still unknown. This paper presents a study of emitter formation by various wet and dry etching methods. Some geometrical models are given for the analysis of anisotropic etching results. The emission features from different emitter arrays are also given for comparison. Through understanding the emission characteristics of various emitter arrays, a novel design for Field-Emission Flat Panel Display is proposed.

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“…The key aspects of the process are its low cost, the ability to generate smooth surfaces, the possibility to release suspended structures and the simplicity to perform batch fabrication. Nevertheless, the particular shapes of the resulting three-dimensional structures depend on multiple factors, such as the crystallographic orientation of the surface [1,2,3,4,5,6], the composition of the applied etchant -e.g. potassium hydroxide (KOH) [7,8], tetramethylammonium hydroxide (TMAH) [9,10] or various other solutions [11]-the etchant concentration [4,6], the temperature [2,4,6] or the use of additives, such as Triton X-100 [12,13] or isopropyl alcohol [4,8,14].…”

Section: Introductionmentioning

confidence: 99%

Level set implementation for the simulation of anisotropic etching: application to complex MEMS micromachining

Montoliu

Ferrando

Gosálvez

et al. 2013

J. Micromech. Microeng.

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Abstract.The use of atomistic methods, such as the Continuous Cellular Automaton (CCA), is currently regarded as an accurate and efficient approach for the simulation of anisotropic etching in the development of Micro-Electro-Mechanical-Systems (MEMS). However, whenever the targeted etching condition is modified (e.g. by changing the substrate material, etchant type, concentration and/or temperature) this approach requires performing a time-consuming recalibration of the full set of internal atomistic rates defined within the method. Based on the Level Set (LS) approach as an alternative and using the experimental data directly as input, we present a fully operational simulator that exhibits similar accuracy than the latest CCA models. The proposed simulator is tested by describing a wide range of silicon and quartz MEMS structures obtained in different etchants through complex processes, including doubleside etching as well as different mask patterns during different etching steps and/or simultaneous masking materials on different regions of the substrate. The results demonstrate that the LS method is able to simulate anisotropic etching for complex MEMS processes with similar computational times and accuracy as the atomistic models.

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Correlation of the anisotropic etching of single−crystal silicon spheres and wafers

Cited by 57 publications

References 6 publications

(100) Silicon Etch‐Rate Dependence on Boron Concentration in Ethylenediamine‐Pyrocatechol‐Water Solutions

(100) Silicon Etch‐Rate Dependence on Boron Concentration in Ethylenediamine‐Pyrocatechol‐Water Solutions

A study of emitter formation by various etching techniques and its application to flat panel display

Level set implementation for the simulation of anisotropic etching: application to complex MEMS micromachining

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