Correlative microscopy of radial junction nanowire solar cells using nanoindent position markers

Fejfar, A.; Hývl, Matěj; Vetushka, Aliaksei; Pikna, Peter; Hájková, Zdeňka; Ledinský, Martin; Kočka, J.; Klapetek, Petr; Marek, A.; Mašková, Andrea; Vyskočil, Jiří; Merkel, J.J.; Becker, Christiane; Itoh, Takashi; Misra, Soumyadeep; Yu, Linwei; Cabarrocas, Pere Roca i

doi:10.1016/j.solmat.2014.10.027

Cited by 11 publications

(11 citation statements)

References 25 publications

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“…To investigate these different regions, we performed CL and EDX measurements on the same area, using a correlative microscopy approach. , The CL maps are given in Figure a,b, showing that the matrix film is highly luminescent, while the precipitates are dark in the probed spectral range, between 1.7 and 2.6 eV. The CL intensity of the matrix film is nonuniform, with observed regions of high intensity around the precipitates.…”

Section: Resultsmentioning

confidence: 99%

“…In order to investigate these different regions, we performed CL and EDX measurements on the same area, using a correlative microscopy approach. 38,39 The CL maps are given in We measured different compositions for the matrix and precipitates using EDX, as shown in constant. Since EDX quantification requires delicate calibration to report an accurate stoichiometry, we report the relative increase in the net counts averaged at the different phases (see Table S1): the difference in the Br counts between the matrix and the precipitates is negligible.…”

Section: Calculated Formation Enthalpies Of the Cs-pb-br Ternary Phasesmentioning

confidence: 99%

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Spatial Phase Distributions in Solution-Based and Evaporated Cs–Pb–Br Thin Films

Caicedo‐Dávila

Funk

Lovrinčić³

et al. 2019

J. Phys. Chem. C

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In recent years, inorganic cesium-lead-halide perovskites, CsPbX3 (X=I, Br, Cl), have attracted 2 interest for optoelectronic applications such as highly efficient thin-film light-emitting diodes or wide-gap absorber materials for photovoltaics. However, phase segregation and secondary phases in as-deposited thin films are still considered to be limiting factors for devices based on CsPbX3. Here, we report a correlative electron microscopy and spectroscopy approach for the identification of secondary phases and their distributions in Cs-Pb-Br thin films, deposited by solution-based and coevaporation methods on various substrates. We identified phases by their compositional, structural, and optoelectronic properties, using X-ray diffraction, spectroscopy and a variety of microscopy techniques. We found that the Cs-Pb-Br films contain ternary Cs4PbBr6 and CsPb2Br5 phases in addition to CsPbBr3, a finding consistent with calculations of formation enthalpies by means of density functional theory showing that these values are very similar for the three ternary phases. We find that these phases can exhibit different spatial distributions inside the film and discuss the influence of the deposition method and synthesis parameters on the resulting phase composition of the Cs-Pb-Br layers.

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Section: Resultsmentioning

confidence: 99%

Section: Calculated Formation Enthalpies Of the Cs-pb-br Ternary Phasesmentioning

confidence: 99%

Spatial Phase Distributions in Solution-Based and Evaporated Cs–Pb–Br Thin Films

Caicedo‐Dávila

Funk

Lovrinčić³

et al. 2019

J. Phys. Chem. C

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“…C-AFM was previously used to study photovoltaic materials , as well as mix-phased Si thin films. , This advanced AFM technique uses a conductive tip to measure the current map in high spatial resolution on the biased sample surface. To convert the measured C-AFM current signal into local sample resistivity via Ohm’s law, it is necessary to uncouple it from the tip–sample contact resistance , and other artifacts. , This can be achieved by applying high tip–sample forces during the measurement.…”

Section: Experimental Sectionmentioning

confidence: 99%

Nanoscale Study of the Hole-Selective Passivating Contacts with High Thermal Budget Using C-AFM Tomography

Hývl

Nogay

Löper

et al. 2021

ACS Appl. Mater. Interfaces

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We investigate hole-selective passivating contacts that consist of an interfacial layer of silicon oxide (SiO x ) and a layer of boron-doped SiC x (p). The fabrication process of these contacts involves an annealing step at temperatures above 750 °C which crystallizes the initially amorphous layer and diffuses dopants across the interfacial oxide into the wafer to facilitate charge transport, but it can also disrupt the SiO x layer necessary for wafer-surface passivation. To investigate the transport mechanism of the charge carriers through the selective contact and its changes during the annealing process, we utilize various characterization methods, such as transmission electron microscopy, micro Raman spectroscopy, and conductive atomic force microscopy. Combining the latter with a sequential removal of material, we assemble a tomographic reconstruction of the crystallized layer that reveals the presence of preferential vertical transport channels.

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“…Enhanced solar cells with various semiconductor nanowires and diverse formation of P/N junctions were widely reported based on the feature of high absorption of solar spectrum and collection of photogenerated carriers of nanowires [88][89][90][91][92][93][94][95][96][97]. Ebaid [98] investigated the combination between the band gap engineering and performance of solar cell by tuning the content of In, as shown in Fig.…”

Section: Characterization Of Nanowires For Photovoltaicsmentioning

confidence: 99%

Atomic-scale tomography of semiconductor nanowires

Ringer

Zheng

2015

Materials Science in Semiconductor Processing

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Correlative microscopy of radial junction nanowire solar cells using nanoindent position markers

Cited by 11 publications

References 25 publications

Spatial Phase Distributions in Solution-Based and Evaporated Cs–Pb–Br Thin Films

Spatial Phase Distributions in Solution-Based and Evaporated Cs–Pb–Br Thin Films

Nanoscale Study of the Hole-Selective Passivating Contacts with High Thermal Budget Using C-AFM Tomography

Atomic-scale tomography of semiconductor nanowires

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