2018
DOI: 10.1016/j.matlet.2018.05.130
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Corrigendum to “A method for optimizing the electrical conductivity of Al:ZnO TCO films” [Mater. Lett. 195 (2017) 52–54]

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“…4 Due to its semiconductive and optical properties, ZnO lms with various dopants have found extensive use in optoelectronic applications. 5,6 Doped zinc oxide thin lms have been prepared using several techniques, including plasma-assisted molecular beam epitaxy (PMBE), spin coating, chemical vapor deposition, radio frequency sputtering, and pulsed laser deposition (PLD). [7][8][9][10][11] Among these methods, sputtering stands out as a promising approach, allowing the synthesis of doped ZnO nanoparticles in multiple layers, leading to polycrystalline lms with a hexagonal structure under specic experimental conditions.…”
Section: Introductionmentioning
confidence: 99%
“…4 Due to its semiconductive and optical properties, ZnO lms with various dopants have found extensive use in optoelectronic applications. 5,6 Doped zinc oxide thin lms have been prepared using several techniques, including plasma-assisted molecular beam epitaxy (PMBE), spin coating, chemical vapor deposition, radio frequency sputtering, and pulsed laser deposition (PLD). [7][8][9][10][11] Among these methods, sputtering stands out as a promising approach, allowing the synthesis of doped ZnO nanoparticles in multiple layers, leading to polycrystalline lms with a hexagonal structure under specic experimental conditions.…”
Section: Introductionmentioning
confidence: 99%