Corrigendum to “Influence of oxygen ion elementary diffusion jumps on the electron current through the conductive filament in yttria stabilized zirconia nanometer-sized memristor” [Chaos, Solitons Fractals 148 (2021) 111014]

Yakimov, A. V.; Филатов, Д. О.; Горшков, О. Н.; Klyuev, Alexey V.; Shtraub, Nikolay I.; Kochergin, Viktor S.; Spagnolo, Bernardo

doi:10.1016/j.chaos.2022.112652

Chaos, Solitons & Fractals

2022

DOI: 10.1016/j.chaos.2022.112652

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Corrigendum to “Influence of oxygen ion elementary diffusion jumps on the electron current through the conductive filament in yttria stabilized zirconia nanometer-sized memristor” [Chaos, Solitons Fractals 148 (2021) 111014]

A. V. Yakimov¹,

Д. О. Филатов²,

О. Н. Горшков³

et al.

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Effect of Nitrogen Ion Diffusion Jumps in Nanometer-Sized Si₃N₄ Memristors Investigated by Low-Frequency Noise Spectroscopy

Yakimov,

Klyuev,

Filatov

et al. 2023

Fluct. Noise Lett.

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The elementary jumps in the electron current through conducting filaments of two nanometer-sized virtual memristor structures consisting of a contact of a conductive atomic force microscope probe to the Si3N4 layer with the thickness of 6[Formula: see text]nm deposited onto the [Formula: see text]-Si(001) conductive substrates are investigated. These structures are: (S1) the Si3N4/Si film; (S2) the Si3N4/SiO2/Si stack, a similar structure with 2[Formula: see text]nm SiO2 sublayer between the film and the substrate. Usually, such investigations are performed by the analysis of the waveform of this current with the aim of extracting the random telegraph noise (RTN). Here, we develop a new indirect method, which is based on the measurement of the spectrum of the low-frequency flicker noise in the current without extracting the RTN. We propose that the flicker noise is caused by the motion (drift/diffusion) of nitrogen ions via vacancies within and around the filament. The number of these ions is estimated by taking into account the geometrical parameters of the filament. This allows us to estimate the root mean square magnitude [Formula: see text] of the current jumps, which are caused by random jumps of nitrogen ions, and the number M of these ions. This is fundamental for understanding the elementary mechanisms of the electron current flowing through the filament and the resistive switching in memristor devices.

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Effect of Nitrogen Ion Diffusion Jumps in Nanometer-Sized Si₃N₄ Memristors Investigated by Low-Frequency Noise Spectroscopy

Yakimov,

Klyuev,

Filatov

et al. 2023

Fluct. Noise Lett.

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show abstract

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Corrigendum to “Influence of oxygen ion elementary diffusion jumps on the electron current through the conductive filament in yttria stabilized zirconia nanometer-sized memristor” [Chaos, Solitons Fractals 148 (2021) 111014]

Cited by 1 publication

References 0 publications

Effect of Nitrogen Ion Diffusion Jumps in Nanometer-Sized Si₃N₄ Memristors Investigated by Low-Frequency Noise Spectroscopy

Effect of Nitrogen Ion Diffusion Jumps in Nanometer-Sized Si₃N₄ Memristors Investigated by Low-Frequency Noise Spectroscopy

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Corrigendum to “Influence of oxygen ion elementary diffusion jumps on the electron current through the conductive filament in yttria stabilized zirconia nanometer-sized memristor” [Chaos, Solitons Fractals 148 (2021) 111014]

Cited by 1 publication

References 0 publications

Effect of Nitrogen Ion Diffusion Jumps in Nanometer-Sized Si3N4 Memristors Investigated by Low-Frequency Noise Spectroscopy

Effect of Nitrogen Ion Diffusion Jumps in Nanometer-Sized Si3N4 Memristors Investigated by Low-Frequency Noise Spectroscopy

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Product

Resources

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Effect of Nitrogen Ion Diffusion Jumps in Nanometer-Sized Si₃N₄ Memristors Investigated by Low-Frequency Noise Spectroscopy

Effect of Nitrogen Ion Diffusion Jumps in Nanometer-Sized Si₃N₄ Memristors Investigated by Low-Frequency Noise Spectroscopy