Corrigendum to "Numerical Simulation of Copper Indium Gallium Diselenide Solar Cells Using One Dimensional SCAPS Software [J. Nig. Soc. Phys. Sci. 3 (2021) 48–58, https://doi.org/10.46481/jnsps.2021.133]"

Abstract

The original content of this published Article has an error in the name of one of the co-authors Eli Danladi which was written incorrectly as D. Eli. We highly regret this.

Enhanced Performance of CuIn1-xGxSe2 Solar Cell Through Optimization of Absorber and Buffer Layer Properties Using SCAPS-1D

“…In accordance to the optimized parameters obtained in this research and those sourced from our previous work [3] (see Table 5), an efficiency of 31.13 %, current density of 31.55 mA/cm 3 , voltage of 1.11 V and fill factor of 88.91 % were obtained (see Figure 10 and Table 6). These photovoltaic parameters obtained from optimization agree very much with those of the theoretical limits quoted by Ruhle [14].…”

“…In line with the initial device set up demonstrated in our previous work [3], we utilized a solar capacitance simulation software based on the poisson and continuity equation to achieve the desired objective. The details of the set-up and simulation can be obtained in Lawani et al [3].…”

“…In line with the initial device set up demonstrated in our previous work [3], we utilized a solar capacitance simulation software based on the poisson and continuity equation to achieve the desired objective. The details of the set-up and simulation can be obtained in Lawani et al [3]. In this study, similarly, a defect from double acceptor with a gaussian energy distribution, value of concentration of 1.0E + 14 cm -3 defect, and level of energy of 0.1, 0.4, eV slightly above valence band, were introduced into the CIGS (absorber) layer.…”

“…Over the years, researchers have been finding the most efficient ways to harness solar energy and this has led to the development of the solar cell. In order to be able to understand the operation of solar cells, numerical modeling has been used in a number of instances and it has proven to be a very important tool in this regard [2,3].…”

“…As a follow up to our previously published article [3], we made use of SCAPS to optimize additional five parameters which include: absorber band gap, absorber electron affinity, buffer layer band gap, buffer layer electron affinity and working temperature.…”