Corrosion Rate of n‐ and p‐Silicon Substrates in HF, HF + HCl, and  HF  +  NH 4 F  Aqueous Solutions

Bertagna, Valérie; Erre, R.; Rouelle, François; Chemla, M.

doi:10.1149/1.1391568

Cited by 18 publications

(12 citation statements)

References 23 publications

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“…Surface roughness.-In qALE of SiGe process, SiGe and Si are etched many times by dBOE which will result in rough surface in Si and SiGe. 44 It is important to check out the surface roughness after qALE. Figure 9 shows the morphology of as grown Epi-SiGe and qALE etched (60 cycles) Epi-SiGe which was obtained by atomic force microscope (AFM) measurement.…”

Section: Resultsmentioning

confidence: 99%

Study of Isotropic and Si-Selective Quasi Atomic Layer Etching of Si_1−xGe_x

Yin

Zhu

Zhao

et al. 2020

ECS J. Solid State Sci. Technol.

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The lateral and vertical gate-all-around (GAA) field-effect transistors are considered the most promising candidates for next generation logic device at and beyond 3-nm technology node. SiGe plays an important role in these devices as the sacrificial layer or channel material and needs isotropic etching. In this paper, an advanced etching process termed quasi atomic layer etching (qALE) is developed with advantages of controllable etch rate and atomically smooth surfaces. The qALE of SiGe is based on wet chemical etching, in which H2O2 is applied to oxidate the surface with cyclic manner, and diluted buffered oxide etchant (dBOE) is applied to remove the oxide. The profiles of SiGe qALE for quasi-self-limited behavior, etch rate and the effect in concentration and temperature of H2O2 have been studied. The etch per cycle (EPC) of Si0.7Ge0.3 is 0.50 nm and the etching selectivity between Si0.7Ge0.3 and heavily p-type doped silicon is 4.99 in Si/SiGe/Si stacked layers with (110) sidewall. The etch rate and the selectivity are influenced by Ge fraction of SiGe and the boron doping in Si. The root mean square (RMS) roughness after 60 cycles qALE is 0.183 nm indicating atomically smooth surfaces. Finally, the application of qALE for vertical nanowire compared with wet continuous etching is discussed in this work.

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Section: Resultsmentioning

confidence: 99%

Study of Isotropic and Si-Selective Quasi Atomic Layer Etching of Si_1−xGe_x

Yin

Zhu

Zhao

et al. 2020

ECS J. Solid State Sci. Technol.

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“…OCP.-We measured the OCP of the PS in contact with these deposition baths. The values of OCP are subject to different factors such as electrolyte composition, 38 different solution contaminants, 27 the presence of dissolved oxygen, 39 whether measurements are carried out in the dark, under illumination, or normal room light. 40 In addition to these factors, the potential is strongly affected by the roughness of the substrate surface that directly affects the surface reactivity during immersion.…”

Section: Resultsmentioning

confidence: 99%

Different Behavior in Immersion Plating of Nickel on Porous Silicon from Acidic and Alkaline Fluoride Media

Harraz

Sasano

Sakka

et al. 2003

J. Electrochem. Soc.

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Immersion plating of nickel ͑Ni͒ on a porous silicon ͑PS͒ layer has been investigated in concentrated ammonium fluoride (NH 4 F) and dilute hydrofluoric acid ͑HF͒ solutions containing Ni 2ϩ . When the PS sample was exposed to the bath containing 5 M NH 4 F and 50 mM Ni 2ϩ at pH 8, metallic Ni was clearly observed at the open-circuit potential without using a reducing agent or any activation treatment at room temperature. However, no deposition was detected when the sample was immersed in a 0.5 wt % HF solution containing the same concentration of Ni 2ϩ at pH 2. The different deposition behavior is discussed on the basis of mixed potential theory, changes in the stability of Si-H bonds of PS as indicated in the Fourier transform infrared spectra, and the different state of Ni complex formation as obtained from the UV-vis spectra. The position of the Ni redox levels in both solutions with respect to the bandedges of Si was also determined and the results revealed a nearly similar energetic situation. Results from current-potential curves showed that a slow Ni deposition from the alkaline solution occurred in the dark and different possible reaction mechanisms were proposed. They also revealed the enhancement of the deposition under illumination, indicating that the deposition mechanism is electron transfer from the conduction band. X-ray photoelectron spectroscopy detected no silicon oxides on the PS surface after being immersed in the alkaline solution, giving merit that a binary PS/Ni nanostructure without Si oxides can be successfully achieved.

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“…After this procedure, an atomically smooth and hydrogen-terminated surface is obtained. For each measurement, a new electrode of n-Si(100) was used because it is well-known that copper can diffuse toward the inside of the silicon. ,,,,,,− …”

Section: Methodsmentioning

confidence: 99%

The Influence of Poly(ethylene oxide) and Illumination on the Copper Electrodeposition Process onto n-Si(100)

et al. 2006

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In this study, we examined the influence of illumination and the presence of poly(ethylene oxide) (PEO) as an additive for the copper electrodeposition process onto n-Si(100). The study was carried out by means of cyclic voltammetry (CV) and the potential steps method, from which the corresponding nucleation and growth mechanism (NGM) were determined. Likewise, a morphologic analysis of the deposits obtained at different potential values by means of atomic force microscopy (AFM) was carried out. In a first stage, Mott-Schottky measurements so as to characterize the energetics of the semiconductor/electrolyte interface were made. Also, parallel capacity measurements were carried out in order to determine the surface state density of the substrate. It was found that when PEO concentration is increased, the number of these surface states decreases. The CV results indicated that the presence of PEO inhibits the photoelectrochemical reaction of oxide formation on the surface of the semiconductor. This allows a decrease in the overpotential associated with the electrodeposition process. The analysis of the j/t transients shows that the NGM corresponds to progressive three-dimensional (3D) diffusional controlled (PN3D(Diff)), which was confirmed by the AFM technique. Neither illumination nor the presence of PEO changes the mechanisms. Their influence is in that they diminish the size of the nuclei and the speed with which these are formed, which produces a more homogeneous electrodeposit.

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Corrosion Rate of n‐ and p‐Silicon Substrates in HF, HF + HCl, and HF + NH 4 F Aqueous Solutions

Cited by 18 publications

References 23 publications

Study of Isotropic and Si-Selective Quasi Atomic Layer Etching of Si_1−xGe_x

Study of Isotropic and Si-Selective Quasi Atomic Layer Etching of Si_1−xGe_x

Different Behavior in Immersion Plating of Nickel on Porous Silicon from Acidic and Alkaline Fluoride Media

The Influence of Poly(ethylene oxide) and Illumination on the Copper Electrodeposition Process onto n-Si(100)

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Corrosion Rate of n‐ and p‐Silicon Substrates in HF, HF + HCl, and HF + NH 4 F Aqueous Solutions

Cited by 18 publications

References 23 publications

Study of Isotropic and Si-Selective Quasi Atomic Layer Etching of Si1−xGex

Study of Isotropic and Si-Selective Quasi Atomic Layer Etching of Si1−xGex

Different Behavior in Immersion Plating of Nickel on Porous Silicon from Acidic and Alkaline Fluoride Media

The Influence of Poly(ethylene oxide) and Illumination on the Copper Electrodeposition Process onto n-Si(100)

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Study of Isotropic and Si-Selective Quasi Atomic Layer Etching of Si_1−xGe_x

Study of Isotropic and Si-Selective Quasi Atomic Layer Etching of Si_1−xGe_x