Cost-effectively improving life endurance of MLC NAND flash SSDs via hierarchical data redundancy and heterogeneous flash memory

Tan, Shishi; Yu, Ruirong; Wan, Shenggang; Cao, Qiang

doi:10.1109/nas.2015.7255200

Cited by 2 publications

(1 citation statement)

References 16 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…As already mentioned, these solutions gained significant market shares from magnetic memories pushing these classic memories more and more toward applications not relying on frequent access to data [7,10,72]. Moreover, without mechanically moving parts and the consequent resistance against physical shock, they are particularly attractive for mobile devices [72,[79][80][81].…”

Section: Flash Memory and Solid-state Drive (Ssd)mentioning

confidence: 99%

Memory technology—a primer for material scientists

et al. 2020

View full text Add to dashboard Cite

From our own experience, we know that there is a gap to bridge between the scientists focused on basic material research and their counterparts in a close-to-application community focused on identifying and solving final technological and engineering challenges. In this review, we try to provide an easy-to-grasp introduction to the field of memory technology for materials scientists. An understanding of the big picture is vital, so we first provide an overview of the development and architecture of memories as part of a computer and call attention to some basic limitations that all memories are subject to. As any new technology has to compete with mature existing solutions on the market, today's mainstream memories are explained, and the need for future solutions is highlighted. The most prominent contenders in the field of emerging memories are introduced and major challenges on their way to commercialization are elucidated. Based on these discussions, we derive some predictions for the memory market to conclude the paper.

show abstract

Section: Flash Memory and Solid-state Drive (Ssd)mentioning

confidence: 99%

Memory technology—a primer for material scientists

et al. 2020

View full text Add to dashboard Cite

show abstract

Cost‐effectively improving solid state drive lifetime by hierarchical redundancy and heterogeneous memories

Zhou

Tan

et al. 2020

Concurrency and Computation

View full text Add to dashboard Cite

Summary Solid state drives (SSDs) built upon MLC NAND flash memories suffer from a low lifetime endurance induced by continuously scaling‐down feature sizes and increasing bit density per cell. To cost‐effectively address this problem, we propose to integrate both hierarchical data redundancy and heterogeneous flash memory techniques into the SSD, named H2‐SSD. Through deploying across‐chips data redundancy in addition to conventional in‐page error correction codes, error correction capacity, so does the lifetime endurance of H2‐SSD can be dramatically improved. Furthermore, an extra small‐size sisngle‐level cell (SLC) chip is integrated into H2‐SSD to store across‐chips parities. Due to the high program/erase performance and lifetime endurance of that SLC chip, I/O performance degradation induced by the hierarchical data redundancy can be significantly mitigated, even under strict synchronous parity update strategies. Quantitative analysis and trace‐driven simulations are conducted to evaluate the effectiveness and efficiency of H2‐SSD, in both the scenes with and without degraded reads. Experimental results demonstrate that H2‐SSD outperform the conventional SSD in maximum Program/Erase cycles by 23% to 178%, and suffer from negligible degradation of I/O performance in terms of both throughput and average response time in most cases.

show abstract

Cost-effectively improving life endurance of MLC NAND flash SSDs via hierarchical data redundancy and heterogeneous flash memory

Cited by 2 publications

References 16 publications

Memory technology—a primer for material scientists

Memory technology—a primer for material scientists

Cost‐effectively improving solid state drive lifetime by hierarchical redundancy and heterogeneous memories

Contact Info

Product

Resources

About