Coulomb blockade and hopping transport behaviors of donor-induced quantum dots in junctionless transistors*

Abstract

The ionized dopants, working as quantum dots in silicon nanowires, exhibit potential advantages for the development of atomic-scale transistors. We investigate single electron tunneling through a phosphorus dopant induced quantum dots array in heavily n-doped junctionless nanowire transistors. Several subpeaks splittings in current oscillations are clearly observed due to the coupling of the quantum dots at the temperature of 6 K. The transport behaviors change from resonance tunneling to hoping conduction with increased temperature. The charging energy of the phosphorus donors is approximately 12.8 meV. This work helps clear the basic mechanism of electron transport through donor-induced quantum dots and electron transport properties in the heavily doped nanowire through dopant engineering.

Observation of source/drain bias-controlled quantum transport spectrum in junctionless silicon nanowire transistor

“…Nowadays junctionless silicon nanowire field-effect transistor (JNT) is considered as a potential candidate for sub-7-nm CMOS node due to its simplified manufacturing technology and outstanding gate controllability. [1,2] In such nanoscale dimensions, the electronic transport characteristics of the device can perform quite differently from those in bulk silicon. [3,4] Indeed, the reduction of device dimensions enhances the importance of quantum mechanical effects.…”

A comparative study on radiation reliability of composite channel InP high electron mobility transistors*

“…In recent years, high-precision sensing and high-quality communication have imposed huge requirements on the operating frequency of integrated circuits, which has increased from W-band to G-band or even terahertz. [1,2] A variety of techniques are adopted to extend the Moore' law and improve the devices' frequency characteristics, such as novel structures [3,4] and fabrication technology. [5] The InP-based high electron mobility transistors (HEMTs) have demonstrated high carrier sheet density, peak drift velocity, and low-field mobility, and the recorded frequency characteristics have exceeded 1 THz.…”