2000
DOI: 10.1063/1.1323522
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Coulomb blockade effects in anodically oxidized titanium wires

Abstract: We investigate the electrical transport properties of narrow titanium ͑Ti͒ wires which are anodically oxidized through a resist mask. At temperatures below 1.2 K the current-voltage characteristics of the resulting Ti/TiOx nanostructures exhibit a zero-current state, characteristic of the Coulomb blockade. The blockade region can be modulated by a capacitively coupled gate electrode. The observed experimental features can be explained in terms of a single electron tunneling model of a multi-island device.

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Cited by 13 publications
(8 citation statements)
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“…The nanowire sheet resistivity R from 0.4 to 1.9 kΩ is still on the metallic side of the metal-to-insulator transition. Coulomb effects in titanium have been observed so far in deliberately oxidized nanowires with noticeably higher resistivity [24], [25]. However, the finite Coulomb gap above the T c requires the existence of tunnel barrier(s), presumably unintentionally formed at the overlapping regions with bismuth contacts.…”
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confidence: 98%
“…The nanowire sheet resistivity R from 0.4 to 1.9 kΩ is still on the metallic side of the metal-to-insulator transition. Coulomb effects in titanium have been observed so far in deliberately oxidized nanowires with noticeably higher resistivity [24], [25]. However, the finite Coulomb gap above the T c requires the existence of tunnel barrier(s), presumably unintentionally formed at the overlapping regions with bismuth contacts.…”
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confidence: 98%
“…We would like to note that all our samples, including the thinnest wires with a typical sheet resistance R 200 Ω, are still comfortably on the metal side of a 'dirty' titanium. Formation of a network of weakly coupled metal grains and the corresponding Coulomb effects have been observed in deliberately oxidized titanium films with the sheet resistance R exceeding few kΩ 29 , 30 . All our samples above the critical temperature demonstrate I − V dependencies without any non-linearities, which otherwise might indicate the existence of weak links (Fig.…”
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confidence: 99%
“…Nanocrystals of titanium monoxide are candidates for use in nanoelectronics [12] as single-electron transistors. The use of single-electron transistors based on quantum tunneling effects can significantly miniaturize computer processors.…”
Section: Introductionmentioning
confidence: 99%