Coulomb blockade in PtSi/porous Si Schottky barrier as a two‐dimensional multi‐tunnelling junction

Mehrara, Hamed; Raissi, Farshid; Khaje, Mahdi

doi:10.1049/iet-cds.2013.0475

Cited by 2 publications

(2 citation statements)

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“…Figure 2 shows the equivalent circuits for the assumed configuration of palladium nanoparticles in Figure 1 . Using a SIMON2.0 simulator, we investigated the

characteristics of equivalent circuits consisting of palladium nano-islands and tunneling junctions [ 32 , 33 , 40 ]. The results from the simulations of

and

arrays are provided in the results and discussion section.…”

Section: Assumptions Of the Model And Simulation Methodsmentioning

confidence: 99%

“…The gaps then form a tunnel barrier with an associated energy barrier. In such a system, single-electron tunneling occurs, which holds the promise of achieving the lowest power consumption in modern electronic devices [ 32 , 33 ]. Hence, the palladium nanoparticles disconnect from each other upon the adsorption of hydrogen gas and the size and widths of the gaps between the nanoparticles change.…”

Section: Introductionmentioning

confidence: 99%

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Coulomb Blockade Effect in Well-Arranged 2D Arrays of Palladium Nano-Islands for Hydrogen Detection at Room Temperature: A Modeling Study

et al. 2020

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The fast growth of hydrogen usage as a clean fuel in civil applications such as transportation, space technology, etc. highlights the importance of the reliable detection of its leakage and accumulation under explosion limit by sensors with a low power consumption at times when there is no accumulation of hydrogen in the environment. In this research, a new and efficient mechanism is presented for hydrogen detection—using the Coulomb blockade effect in a well-arranged 2D array of palladium nano-islands—which can operate at room temperature. We demonstrated that under certain conditions of size distribution and the regularity of palladium nano-islands, with selected sizes of 1.7, 3 and 6.1 nm, the blockade threshold will appear in current-voltage (IV) characteristics. In reality, it will be achieved by the inherent uncertainty in the size of the islands in nano-scale fabrication or by controlling the size of nanoparticles from 1.7 to 6.1 nm, considering a regular arrangement of nanoparticles that satisfies single-electron tunneling requirements. Based on the simulation results, the threshold voltage is shifted towards lower ones due to the expansion of Pd nanoparticles exposed to the environment with hydrogen concentrations lower than 2.6%. Also, exploring the features of the presented structure as a gas sensor, provides robustness against the Gaussian variation in nano-islands sizes and temperature variations. Remarkably, the existence of the threshold voltage in the IV curve and adjusting the bias voltage below this threshold leads to a drastic reduction in power consumption. There is also an improvement in the minimum detectable hydrogen concentration as well as the sensor response.

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“…Figure 2 shows the equivalent circuits for the assumed configuration of palladium nanoparticles in Figure 1 . Using a SIMON2.0 simulator, we investigated the

characteristics of equivalent circuits consisting of palladium nano-islands and tunneling junctions [ 32 , 33 , 40 ]. The results from the simulations of

and

arrays are provided in the results and discussion section.…”

Section: Assumptions Of the Model And Simulation Methodsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Coulomb Blockade Effect in Well-Arranged 2D Arrays of Palladium Nano-Islands for Hydrogen Detection at Room Temperature: A Modeling Study

et al. 2020

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Mid-Infrared Response from Cr/n-Si Schottky Junction with an Ultra-Thin Cr Metal

Lin

2022

Nanomaterials

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Infrared detection technology has been widely applied in many areas. Unlike internal photoemission and the photoelectric mechanism, which are limited by the interface barrier height and material bandgap, the research of the hot carrier effect from nanometer thickness of metal could surpass the capability of silicon-based Schottky devices to detect mid-infrared and even far-infrared. In this work, we investigate the effects of physical characteristics of Cr nanometal surfaces and metal/silicon interfaces on hot carrier optical detection. Based on the results of scanning electron microscopy, atomic force microscopy, and X-ray diffraction analysis, the hot carrier effect and the variation of optical response intensity are found to depend highly on the physical properties of metal surfaces, such as surface coverage, metal thickness, and internal stress. Since the contact layer formed by Cr and Si is the main role of infrared light detection in the experiment, the higher the metal coverage, the higher the optical response. Additionally, a thicker metal surface makes the hot carriers take a longer time to convert into current signals after generation, leading to signal degradation due to the short lifetime of the hot carriers. Furthermore, the film with the best hot carrier effect induced in the Cr/Si structure is able to detect an infrared signal up to 4.2 μm. Additionally, it has a 229 times improvement in the signal-to-noise ratio (SNR) for a single band compared with ones with less favorable conditions.

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Coulomb blockade in PtSi/porous Si Schottky barrier as a two‐dimensional multi‐tunnelling junction

Cited by 2 publications

References 36 publications

Coulomb Blockade Effect in Well-Arranged 2D Arrays of Palladium Nano-Islands for Hydrogen Detection at Room Temperature: A Modeling Study

Coulomb Blockade Effect in Well-Arranged 2D Arrays of Palladium Nano-Islands for Hydrogen Detection at Room Temperature: A Modeling Study

Mid-Infrared Response from Cr/n-Si Schottky Junction with an Ultra-Thin Cr Metal

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