2009
DOI: 10.1103/physrevlett.102.026804
|View full text |Cite
|
Sign up to set email alerts
|

Coulomb Drag in the Exciton Regime in Electron-Hole Bilayers

Abstract: We report electrical transport measurements on GaAs/AlGaAs based electron-hole bilayers. These systems are expected to make a transition from a pair of weakly coupled two-dimensional systems to a strongly coupled exciton system as the barrier between the layers is reduced. Once excitons form, phenomena such as Bose-Einstein condensation of excitons could be observed. In our devices, electrons and holes are confined in double quantum wells, and carriers in the devices are induced with top and bottom gates leadi… Show more

Help me understand this report
View preprint versions

Search citation statements

Order By: Relevance

Paper Sections

Select...
1
1
1
1

Citation Types

10
187
1

Year Published

2009
2009
2023
2023

Publication Types

Select...
8
1

Relationship

0
9

Authors

Journals

citations
Cited by 161 publications
(198 citation statements)
references
References 31 publications
10
187
1
Order By: Relevance
“…The onset of spontaneous coherence was evidenced by a strong enhancement of the recombination [25] and tunneling [26] rate, respectively. The results of other transport and optical experiments were also consistent with spontaneous coherence of indirect excitons [24,25,[27][28][29][30][31][32][33]. However, no direct measurement of coherence has been performed in these studies.…”
Section: Spontaneous Coherence Of Excitonssupporting
confidence: 69%
“…The onset of spontaneous coherence was evidenced by a strong enhancement of the recombination [25] and tunneling [26] rate, respectively. The results of other transport and optical experiments were also consistent with spontaneous coherence of indirect excitons [24,25,[27][28][29][30][31][32][33]. However, no direct measurement of coherence has been performed in these studies.…”
Section: Spontaneous Coherence Of Excitonssupporting
confidence: 69%
“…Finally, we recall that upturns of the Coulomb drag resistivity were reported in e-h doped GaAs/AlGaAs coupled quantum wells [70][71][72] . However, the combination of 2D electron and hole gases in the same GaAs material required a large nanofabrication effort, and the reported magnitude of the drag anomalies was smaller than in our hybrid heterostructures.…”
Section: Discussionmentioning
confidence: 64%
“…While qualitatively resembling the upturn observed in electron-hole bilayers Seamons et al, 2009), the theory accounts neither for a subsequent downturn at the lowest temperatures, nor the apparent violation of Onsager reciprocity [although the latter might be related to heating effects ]. The theory also does not make falsifiable predictions regarding the dependence of ρ D on carrier densities in the two layers [at higher temperatures, where the data show the standard T 2 dependence, the density dependence of ρ D is stronger than expected on the basis of the Fermi-liquid many-body calculations (Hwang and Das Sarma, 2008b)].…”
Section: B Interlayer Exciton Formationmentioning
confidence: 80%
“…They have been used to investigate properties of electron-electron scattering in low-density 2D electron systems Kellogg et al, 2002a); signatures of metal-insulator transition in dilute 2D hole systems (Jörger et al, 2000a,b;Pillarisetty et al, 2002Pillarisetty et al, , 2005a; quantum coherence of electrons (Kim et al, 2011;Price et al, 2008Price et al, , 2007 and composite fermions (Price et al, 2010); exciton effects in electron-hole bilayers Keogh et al, 2005;Morath et al, 2009;Seamons et al, 2009); exotic bilayer collective states (Eisenstein, 2014), especially the quantum Hall effect (QHE) at the total filling factor Îœ T = 1 (Finck et al, 2010;Kellogg et al, 2003Kellogg et al, , 2002bSchmult et al, 2010;Spielman et al, 2004;Tutuc et al, 2009); compressible quantum Hall (QH) states at half-integer filling factor (Muraki et al, 2004;Zelakiewicz et al, 2000); integer QH regime (Lok et al, 2002); Luttinger liquid effects (Debray et al, 2001;Laroche et al, 2008Laroche et al, , 2014; Wigner crystallization in quantum wires (Yamamoto et al, 2002(Yamamoto et al, , 2006(Yamamoto et al, , 2012; and one-dimensional (1D) sub-bands in quasi 1D wires (Debray et al, 2000;Laroche et al, 2011). More generally, interlayer interaction and corresponding transport properties have been studied in hybrid devices comprising a quantum wire and a quantum dot (Krishnaswamy et al, 1999); a SC film and a 2D electron gas (Farina et al, 2004); Si metal-oxide-semiconductor systems …”
Section: Frictional Dragmentioning
confidence: 99%