“…Along with the evolution of ultra-short pulse laser techniques, the implements of radio-frequency compression, [36][37][38] mega-eV electron source, [39][40][41] terahertz radiation compression, [42,43] and highly compact instrument design [44][45][46][47] make UED leap in temporal resolution from hundreds of ps to nowadays tens of fs. [48] On the other hand, efforts have been made to extend the capabilities of UED, i.e., to apply UED in more fields. For example, UED working in reflection geometry [49] was applied in tracking transient structure of germanium surface [50] and phospholipids, [51] and thermal transport across a heterostructure interface; [52] convergent-beam UED was employed to map out lattice deformations in silicon wedge [53,54] and graphite sheet; [55,56] pulsed electron sources working with medium kinetic energy of 1 keV-10 keV [45] and low kinetic energy of hundreds of electron volts [33,34,46,47] were designed to specify UED in studies of thin film, monolayer, surface, and interface.…”