Coulomb-driven single defect engineering for scalable qubits and spin sensors in diamond

Lühmann, Tobias; John, Roger; Wunderlich, Ralf; Meijer, Jan; Pezzagna, Sébastien

doi:10.1038/s41467-019-12556-0

Cited by 107 publications

(120 citation statements)

References 55 publications

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“…It is worth remarking that the higher PL emission intensity from the F-related ensemble is in line with the observation in Ref. 26 on the increased conversion efficiency of NV centers in N-implanted diamond upon the introduction of dopants with high-electron affinity such as S, O. According to this scheme, the optical activation of defects based on halogen impurities might follow a similar thermodynamic pathway.…”

Section: Resultssupporting

confidence: 89%

Fluorine-based color centers in diamond

Tchernij

Lühmann

Corte

et al. 2020

Sci Rep

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We report on the creation and characterization of the luminescence properties of high-purity diamond substrates upon F ion implantation and subsequent thermal annealing. Their room-temperature photoluminescence emission consists of a weak emission line at 558 nm and of intense bands in the 600–750 nm spectral range. Characterization at liquid He temperature reveals the presence of a structured set of lines in the 600–670 nm spectral range. We discuss the dependence of the emission properties of F-related optical centers on different experimental parameters such as the operating temperature and the excitation wavelength. The correlation of the emission intensity with F implantation fluence, and the exclusive observation of the afore-mentioned spectral features in F-implanted and annealed samples provides a strong indication that the observed emission features are related to a stable F-containing defective complex in the diamond lattice.

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Section: Resultssupporting

confidence: 89%

Fluorine-based color centers in diamond

Tchernij

Lühmann

Corte

et al. 2020

Sci Rep

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“…Given the role of magnetic dopants in dilute magnetic semiconductors 40 – 42 , 48 , the vacancy-induced SOP may provide a new path toward generating large magnetic moments in correlated non-magnetic topological semimetals. Similar to the single defect engineering for scalable qubits and spin sensors in diamond 49 , controlled engineering of the SOPs may pave the way toward practical applications in functional quantum devices.…”

Section: Discussionmentioning

confidence: 99%

Localized spin-orbit polaron in magnetic Weyl semimetal Co3Sn2S2

et al. 2020

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The kagome lattice Co3Sn2S2 exhibits the quintessential topological phenomena of a magnetic Weyl semimetal such as the chiral anomaly and Fermi-arc surface states. Probing its magnetic properties is crucial for understanding this correlated topological state. Here, using spin-polarized scanning tunneling microscopy/spectroscopy (STM/S) and non-contact atomic force microscopy (nc-AFM) combined with first-principle calculations, we report the discovery of localized spin-orbit polarons (SOPs) with three-fold rotation symmetry nucleated around single S-vacancies in Co3Sn2S2. The SOPs carry a magnetic moment and a large diamagnetic orbital magnetization of a possible topological origin associated relating to the diamagnetic circulating current around the S-vacancy. Appreciable magneto-elastic coupling of the SOP is detected by nc-AFM and STM. Our findings suggest that the SOPs can enhance magnetism and more robust time-reversal-symmetry-breaking topological phenomena. Controlled engineering of the SOPs may pave the way toward practical applications in functional quantum devices.

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“…In recent years, ion implantation has been extensively used for the development of single photon emitters for purposes of quantum electronics, photonics, cryptography, magnetometry, etc. [4][5][6][7][8]. To change the conductivity and the optical properties of the surface layer of diamond, one applies ion beam technology [9].…”

Section: Introductionmentioning

confidence: 99%

Probing the Nanostructure of Neutron-Irradiated Diamond Using Raman Spectroscopy

2020

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Disordering of crystal lattice induced by irradiation with fast neutrons and other high-energy particles is used for the deep modification of electrical and optical properties of diamonds via significant nanoscale restructuring and defects engineering. Raman spectroscopy was employed to investigate the nature of radiation damage below the critical graphitization level created when chemical vapor deposition and natural diamonds are irradiated by fast neutrons with fluencies from 1 × 1018 to 3 × 1020 cm−2 and annealed at the 100–1700 °C range. The significant changes in the diamond Raman spectra versus the neutron-irradiated conditions are associated with the formation of intrinsic irradiation-induced defects that do not completely destroy the crystalline feature but decrease the phonon coherence length as the neutron dose increases. It was shown that the Raman spectrum of radiation-damaged diamonds is determined by the phonon confinement effect and that the boson peak is present in the Raman spectra up to annealing at 800–1000 °C. Three groups of defect-induced bands (first group = 260, 495, and 730 cm−1; second group = 230, 500, 530, 685, and 760 cm–1; and third group = 335, 1390, 1415, and 1740 cm−1) were observed in Raman spectra of fast-neutron-irradiated diamonds.

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Coulomb-driven single defect engineering for scalable qubits and spin sensors in diamond

Cited by 107 publications

References 55 publications

Fluorine-based color centers in diamond

Fluorine-based color centers in diamond

Localized spin-orbit polaron in magnetic Weyl semimetal Co3Sn2S2

Probing the Nanostructure of Neutron-Irradiated Diamond Using Raman Spectroscopy

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