2003
DOI: 10.1103/physrevb.68.153303
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Coulomb interaction in the spin Hall effect

Abstract: The influence of the electronic Coulomb interaction on the spin-orbit-coupling induced spin Hall effect was discussed. It was shown that the electronic Coulomb interaction may decrease substantially the spin-orbitcoupling induced transverse spin accumulation in a sample when a longitudinal charge current circulates in it, and the decrease of the transverse spin accumulation due to the influences of the Coulomb interaction is determined by the ratio of the spin-drag resistivity to the ordinary resistivity of th… Show more

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Cited by 23 publications
(30 citation statements)
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“…The inverse effect, that, in materials showing the anomalous Hall effect, an unpolarized charge current leads to a transversal spin (but not charge!) current has been proposed by Hirsch 20,21,22 and is called the spin Hall effect. Both of these effects will in the following be identified for our model system.…”
Section: Introductionmentioning
confidence: 99%
“…The inverse effect, that, in materials showing the anomalous Hall effect, an unpolarized charge current leads to a transversal spin (but not charge!) current has been proposed by Hirsch 20,21,22 and is called the spin Hall effect. Both of these effects will in the following be identified for our model system.…”
Section: Introductionmentioning
confidence: 99%
“…Coulomb interactions are known to reduce the effect of spin-orbit coupling in the spin-Hall effect 47 . The phononmodulated spin-orbit interaction has been investigated to show that the screening is influenced by the spin-orbit coupling 48 .…”
Section: Introductionmentioning
confidence: 99%
“…The spin-orbit (SO) interaction in semiconductors has attracted great attention in recent years 1,2,3,4,5,6,7,8,9,10,11 as it plays a very interesting role for the emerging field of semiconductor spintronics. SO interaction can couple the spin degree of freedom of an electron to its orbital motion and vice versa thereby giving a useful handle for manipulating and controlling the electron spin by external electric fields or gate voltages.…”
Section: Introductionmentioning
confidence: 99%