Coulomb staircase with negative differential resistance at room temperature for a metal tip-metal dot-semiconductor double junction

Radojkovic, P.; Hartmann, E.; Schwartzkopff, M.; Enachescu, M.; Stefanov, E.; Koch, F.

doi:10.1016/0039-6028(96)00558-4

Cited by 9 publications

(12 citation statements)

References 12 publications

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“…Therefore, the total resistance R total can be expressed as a sum of the quantized contact resistance R c and a resistance of the depletion region (R dep ), that is, R total = R c + R dep . The existence of a similar space-charge region under a nanoscale gold dot deposited on a p-Si(111) surface was previously pointed out by Radojkovic et al [12]. Another possible explanation might be a voltage-drop effect caused by a finite input resistance of a current preamplifier, which was previously indicated by Olsen et al [18].…”

Section: Mechanism Of Nanodot Formationmentioning

confidence: 91%

“…In order to cause a point contact between the gold tip and the Si(111) surface, the voltage pulses were applied to the z-axis piezo actuator, by which the tip can reduce its gap distance by a certain distance for a certain period. Hereafter, this new method is called the z-pulse method so that we can distinguish it from the conventional voltage pulse method [9][10][11][12]. Using the STM control software, we can set the pulse conditions such as the tip position, the magnitude of the z-axis movement, and the duration of pulses.…”

Section: Methodsmentioning

confidence: 99%

“…The STM-based techniques have already proved themselves to be extremely powerful tools for nanotechnology [4]. Various nanofabrication techniques using SPM have been proposed and realized: for example, atom manipulation [5], local deposition from organometallic gases [6], nanoscale selective oxidation [7], nanoscale lithography [8], field induced transfer of tip material [9][10][11][12], and so on. The final goal of our research project is to create nanodevices such as single electron tunneling (SET) circuits on a clean surface by using STM nanofabrication techniques.…”

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confidence: 99%

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Nanostructure fabrication with a point contact formation between a gold tip and a Si(111)-(7×7) surface with an ultrahigh vacuum scanning tunneling microscope

Fujita¹,

Sheng²,

Dong³

et al. 1998

Applied Physics A: Materials Science & Processing

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Ultra-small gold dots of ∼5 nm in diameter have been fabricated reproducibly on a Si(111)-(7 × 7) surface in ultrahigh vacuum at room temperature and at 50 K by applying pulses to a piezo z-axis of a scanning tunneling microscope (z-pulse method). Nanodot formation by the z-pulse method can be attributed to the spontaneous formation of a nanometer-scale point contact of a gold-tip apex on the surface. Atomically resolved images of the reconstructed structure are still observable even after many cycles of point contact formation. Owing to its high deposition probability, fabrication of a continuous gold nanoline of 5 nm wide and 50 nm long can be realized.Fabrication of nanometer-scale structures has become very important during the last decade, not only for scientific interests [1, 2], but also for the potential technological applications in nanoelectronics [3]. The advent of a scanning tunneling microscope (STM) and related scanning probe microscopes (SPM) has spurred this trend significantly. The STM-based techniques have already proved themselves to be extremely powerful tools for nanotechnology [4]. Various nanofabrication techniques using SPM have been proposed and realized: for example, atom manipulation [5], local deposition from organometallic gases [6], nanoscale selective oxidation [7], nanoscale lithography [8], field induced transfer of tip material [9][10][11][12], and so on. The final goal of our research project is to create nanodevices such as single electron tunneling (SET) circuits on a clean surface by using STM nanofabrication techniques. Matsumoto et al. have already fabricated SET transistors by the STM nano-oxidation process in air [13].

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Section: Mechanism Of Nanodot Formationmentioning

confidence: 91%

Section: Methodsmentioning

confidence: 99%

mentioning

confidence: 99%

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Nanostructure fabrication with a point contact formation between a gold tip and a Si(111)-(7×7) surface with an ultrahigh vacuum scanning tunneling microscope

Fujita¹,

Sheng²,

Dong³

et al. 1998

Applied Physics A: Materials Science & Processing

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“…Spectroscopic data monitored in this vertical arrangement clearly reveal Coulomb-charging effects in the lowtemperature regime [2]. At room temperature, single-electron phenomena have been observed in an STM by replacing the tunnel oxide supporting the Au island by a Si substrate; thus the second junction is formed by the depletion region within the semiconductor surrounding the Au dot [3][4][5]. Molecularly coated Au particles have been employed in laterally defined electrode configurations to electronically bridge a gap of a few tens of nm in width.…”

Section: Introductionmentioning

confidence: 95%

STM-assisted manipulation of Ag nanoparticles

Radojkovic

Schwartzkopff

Gabriel

et al. 1998

Applied Physics A: Materials Science & Processing

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We report scanning tunneling microscope (STM) investigations of inert-gas-evaporated Ag nanoparticles deposited on atomically flat, H-terminated Si(111) surfaces, to which they weakly stick. For the present purpose, nanoparticles having an average size of 3 nm are fabricated and the particle coverage on the substrate fluctuates between one and three monolayers. The weakly coupling particle network can repeatedly be imaged with the STM without inadvertently manipulating the fundamental building blocks. When the STM is operated in the field-emission regime and the tunnel current is kept between 50 pA and 39 µA, the temperature of the nanoparticles rises, thus stimulating local manipulation processes. Depending on the power density dissipated in the particles, we distinguish between a local sintering process leading to the formation of narrow necks to the nearest neighbors, while the original granular nature of the particle layer is maintained, and a complete fusion. In the latter case, stable nanometer-scale structures are fabricated which strongly interconnect with the underlying substrate. In combining nanoparticle-inherent properties with existing theory, we roughly estimate the temperature rise of the nanoparticles and confirm the possibility of particle liquefaction for the highest power densities generated.There is substantial interest in research and application of minute metal particles (nanocrystals or nanoparticles) as they present some peculiar features caused by their unusual optical, electronic, and thermodynamic properties relative to bulk metal [1]. For instance, if the energy needed to add one electron to an individual particle exceeds the mean thermal energy, single-electron charging processes, such as Coulomb blockade and Coulomb staircase, will develop. An approach has been to keep the tip of the scanning tunneling microscope (STM) stationary over an isolated Au island deposited onto * On leave to

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“…Nano-clusters can also be deposited and manipulated on surfaces [8][9][10][11][12][13][14][15]. Quantumsize effects, such as Coulomb's blockade and staircase, may become important for nanoclusters, and be used in new devices [16][17][18][19][20][21][22][23][24].…”

Section: Introductionmentioning

confidence: 99%

Generation and analysis of nano-scale Al islands by STM

Hu¹,

Blanckenhagen²

1998

Applied Physics A: Materials Science & Processing

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Metallic nanoclusters on suitable substrates are of particular interest when studying thermally activated island decay processes and single-electron tunneling effects. By application of voltage pulses to the STM tip-sample junction, well-defined Al clusters ranging from 3 to a few hundred nm in diameter have been generated on a clean Si(111) surface in ultra-high vacuum (UHV). The voltage thresholds determined are about −5 V for negative sample pulses and +6 V for positive sample pulses under the current experimental conditions. Thermal decay rates of two Al islands (10 nm and 30 nm in diameter) at room temperature have been studied as a function of time using STM. It is found that Al clusters on clean Si(111) are stable in UHV. Deposition mechanisms in terms of tip melting, point contact, and field evaporation have been discussed.

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Coulomb staircase with negative differential resistance at room temperature for a metal tip-metal dot-semiconductor double junction

Cited by 9 publications

References 12 publications

Nanostructure fabrication with a point contact formation between a gold tip and a Si(111)-(7×7) surface with an ultrahigh vacuum scanning tunneling microscope

Nanostructure fabrication with a point contact formation between a gold tip and a Si(111)-(7×7) surface with an ultrahigh vacuum scanning tunneling microscope

STM-assisted manipulation of Ag nanoparticles

Generation and analysis of nano-scale Al islands by STM

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