Electrostatically confined quantum dots in bilayer graphene have shown potential as building blocks for quantum technologies. To operate the dots, e.g., as qubits, a precise understanding and control of the confined states and their properties is required. Here, we perform large‐scale numerical characterization of confined quantum states in bilayer graphene dots over an extensive range of gate‐tunable parameters such as the dot size, depth, shape, and the bilayer graphene gap. We establish the dot states’ orbital degeneracy, wave function distribution, and valley g‐factor and provide the parametric dependencies to achieve different regimes. We find that the dot states are highly susceptible to gate‐dependent confinement and material parameters, enabling efficient tuning of confined states and valley g‐factor modulation by quantum dot design.This article is protected by copyright. All rights reserved.