Coupled Cavity Single-Mode Laser Based on Regrowth-Free Integrated MMI Reflectors

Morrissey, Padraic E.; Kelly, Niall P.; Dernaika, Mohamad; Caro, Ludovic; Yang, Hua; Peters, Frank

doi:10.1109/lpt.2016.2541695

Cited by 21 publications

(10 citation statements)

References 15 publications

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“…The incident light is reflected on the angled facet and back into the waveguide due to total internal reflection. The active MIR design and fabrication process is similar to the reflector reported in (16). Although theoretically the MIR should reflect back 100% of the light, it has been shown that it suffers from some loss.…”

Section: Device Design and Fabricationmentioning

confidence: 93%

Single facet semiconductor laser with deep etched V-notch reflectors integrated with an active multimode interference reflector

Dernaika

Caro

Kelly

et al. 2017

Journal of Modern Optics

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A single mode laser based on novel deep etched V-notch reflectors is presented in this paper. The reported device has a stable single mode operation and a side mode suppression ratio of 37 dB. The laser is widely tunable and it can be fine-tuned. Moreover, the laser cavity is monolithically integrated with an active multimode interference reflector, and has a total length of 860 µm. ARTICLE HISTORY

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Section: Device Design and Fabricationmentioning

confidence: 93%

Single facet semiconductor laser with deep etched V-notch reflectors integrated with an active multimode interference reflector

Dernaika

Caro

Kelly

et al. 2017

Journal of Modern Optics

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“…Evolving from colliding pulse ML, multiple colliding pulse ML features and multiple SAs concatenated with gain sections, for repetition rates multiplication >2 as has been extensively investigated [20,21]. Recently, a new class of on-chip broadband reflector based on the multimode interference (MMI) principle has been proposed [22] and demonstrated its wide applicability [23,24]. Such multimode interference reflectors (MIRs) are simple to create in lithography with greater fabrication tolerance to replace DBRs and cleaved facets.…”

Section: Photonic Integrated Signal Sourcementioning

confidence: 99%

300 GHz Optoelectronic Transmitter Combining Integrated Photonics and Electronic Multipliers for Wireless Communication

et al. 2019

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THz communications systems at carrier frequencies above 200 GHz are the key to enable next-generation mobile communication networks with 100 Gbit/s wireless data rates. One of the key questions is, which carrier frequency generation technique will be the most suitable. This is currently addressed by two separate approaches, electronics-based and photonics-based. We present in this paper a truly microwave photonic approach that benefits from the main key features of each, bandwidth, tunability, stability and fiber compatibility from photonics and power handling capability from the electronics. It is based on a Photonic Local Oscillator (PLO), generating a 100 GHz frequency, fed into an electronic frequency multiplier. A high speed uni-travelling carrier photodiode (UTC-PD) provides the 100 GHz PLO for Schottky tripler diodes, generating 300 GHz signal. To feed the UTC-PD, we present a photonic integrated mode locked laser source. According to the simulations and measurements, the developed transmitter can produce a maximum of 12 μW of THz power at 280 GHz.

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“…9,10 Pulse testing of the first growth allowed the material to lase at high currents, with the spectrum centered at 1.5 μm, Figure 5, indicating that the QWs had been correctly designed but that the optical efficiency had been greatly reduced. A Fourier transform of the optical spectra was used to extract the cleaved cavity length 11 and indicates that the cleaved facets were unharmed and not responsible for the failure to lase. An electrochemical capacitance-voltage profile (ECVP) was performed on a sample to determine the doping profile after growth.…”

Section: Testing and Characterizationmentioning

confidence: 99%

P‐substrate InP‐based 1.5 μm lasers using an internal carbon‐doped layer to block p‐dopant diffusion

Duggan,

Yang,

Kelly

et al. 2018

Micro & Optical Tech Letters

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P‐substrate AlGaInAs/InP lasers are enabled using an internal carbon‐doped layer to block Zn‐diffusion. These inverted lasers are developed for the aim of further monolithic vertical integration with passive or active material, which would allow full system on‐chip integration. The lasers emit at 1.5 μm making them ideal for telecommunication applications. Different p‐substrate laser designs were grown to quantify the effect the carbon doped layer had on blocking Zn p‐dopants diffusion, which permits the long growths necessary for vertical integration. Current, voltage, and capacitance measurements were used to examine the different laser designs, proving that Zn p‐dopant diffusion is responsible for p‐substrate laser failure.

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Coupled Cavity Single-Mode Laser Based on Regrowth-Free Integrated MMI Reflectors

Cited by 21 publications

References 15 publications

Single facet semiconductor laser with deep etched V-notch reflectors integrated with an active multimode interference reflector

Single facet semiconductor laser with deep etched V-notch reflectors integrated with an active multimode interference reflector

300 GHz Optoelectronic Transmitter Combining Integrated Photonics and Electronic Multipliers for Wireless Communication

P‐substrate InP‐based 1.5 μm lasers using an internal carbon‐doped layer to block p‐dopant diffusion

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