Coupled electron and thermal transport simulation of self-heating effects in junctionless MOSFET

Mohamed, Mohamud Yusuf; Akšamija, Zlatan

doi:10.1088/1742-6596/647/1/012026

Cited by 4 publications

(2 citation statements)

References 4 publications

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“…Thermal management thus remains a constraint for design-technology-co-optimization for neuronal circuit design [2]. The operation of junctionless transistors under low and high temperatures has been investigated and analyzed experimentally [12][13][14][15], and through electrothermal simulations [16][17][18][19] previously. However, existing studies lack in-depth understanding of nanoscale electro-thermal phenomena and thermal parameter extraction methodology compatible with compact modelling [20].…”

Section: Introductionmentioning

confidence: 99%

Nanoscale Thermal Transport in Vertical Gate-All-Around Junctionless Nanowire Transistors—Part I: Experimental Methods

Mukherjee,

Rezgui,

Wang

et al. 2023

IEEE Trans. Electron Devices

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In this paper, we present the first detailed experimental study of electro-thermal effects in 3D vertical gate-all-around junctionless nanowire transistors (JLNT). In contrast with conventional CMOS technologies, JLNTs exhibit steady increase of current with temperature owing to weak mobility degradation in the highly doped nanowires. Consequently, in this work, we proposed novel experimental methods for extracting thermal resistance using DC and low-frequency S-parameter measurements. Experimental results obtained from different methods are validated against theoretical as well as simulated values obtained from multiphysics simulation of JLNTs.

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Section: Introductionmentioning

confidence: 99%

Nanoscale Thermal Transport in Vertical Gate-All-Around Junctionless Nanowire Transistors—Part I: Experimental Methods

Mukherjee,

Rezgui,

Wang

et al. 2023

IEEE Trans. Electron Devices

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“…Monte Carlo method makes it possible to simulate the self-heating effects self-consistently with including detailed physical models and complicated device structures. [18][19][20][21] The nonequilibrium Green function (NEGF) 8,[22][23][24] method also enable us to simulate the self-heating effects in ultra-scaled transistors . 25,26) For the thermoelectric devices, the phonon and electron mutual drag effects should play an important role, [27][28][29] and the self-consistent simulation should include the momentum exchange between electrons and phonons.…”

Section: Introductionmentioning

confidence: 99%

Nonequilibrium Green function simulation of coupled electron–phonon transport in one-dimensional nanostructures

Kajiwara

Mori

2019

Jpn. J. Appl. Phys.

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Phonon thermal-conductance of a one-dimensional semiconductor nanostructure has been calculated by self-consistently solving coupled nonequilibrium Green function equations for electrons and phonons. The channel length, N, dependence of the phonon thermal-conductance change, ΔK p , due to the electron-phonon interaction is found to obey a simple relation ofp e with a constant proportionality factor β for the calculated N range up to N = 100 (G e is the electrical conductance). The phonon thermal-conductance change in the isotopically disordered system is found to be hardly affected by the presence of the isotope impurities. © 2019 The Japan Society of Applied Physics where u i is the mass-renormalized atom displacement.The electron-phonon interaction is taken into account only in the channel region within the Su-Schrieffer-Heeger (SSH) model, 36) where the electron transfer is affected by the lattice distortion. The electron-phonon interaction Hamiltonian 31) is thus given by

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Phonon Dissipation in Nanostructured Semiconductor Devices: Dispersing Heat Is Critical for Continued Integrated Circuit Progress

Mohamed

Raleva

Vasileska

et al. 2019

IEEE Nanotechnology Mag.

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Coupled electron and thermal transport simulation of self-heating effects in junctionless MOSFET

Cited by 4 publications

References 4 publications

Nanoscale Thermal Transport in Vertical Gate-All-Around Junctionless Nanowire Transistors—Part I: Experimental Methods

Nanoscale Thermal Transport in Vertical Gate-All-Around Junctionless Nanowire Transistors—Part I: Experimental Methods

Nonequilibrium Green function simulation of coupled electron–phonon transport in one-dimensional nanostructures

Phonon Dissipation in Nanostructured Semiconductor Devices: Dispersing Heat Is Critical for Continued Integrated Circuit Progress

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