Coupled Monte Carlo-drift diffusion analysis of hot-electron effects in MOSFETs

Higman, J.M.; Hess, K.; Hwang, C.G.; Dutton, R.W.

doi:10.1109/16.299675

Cited by 75 publications

(13 citation statements)

References 31 publications

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“…The sub-band-gap portions of CB-CB EL are similar to the CB-VB near-band-gap recombination EL in intensity, but span a much broader range of photon energies away from the band gap. When modeled [36][37][38] using an empirical distribution function [40], the CB-CB EL is slowly varying throughout a wide range from 0.5 eV to 1 eV. …”

Section: Below-gap El: Hot-electron Radiative Transitions Between Conmentioning

confidence: 99%

“…The various types of transitions are shown in Figure In these models, the conduction-band electron-energy distribution functions are taken to be either a simple Maxwellian thermal distribution, or a more realistic Gaussian form. The empirical Gaussian form is used to approximate the results of Monte Carlo simulations of hot-electron drift and diffusion near the drain of MOSFETs [40]. This empirical form is thought to be applicable to hot carriers in a variety of high-field situations, including those associated with impact ionization.…”

Section: Below-gap El: Hot-electron Radiative Transitions Between Conmentioning

confidence: 99%

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Light emission in silicon tunnel diodes

et al. 2004

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We report general hot-carrier mechanisms for electroluminescence (EL) in metal-insulator-silicon tunnel diodes. We demonstrate these effects using various combinations of Si-oxide and Al-oxide tunnel-barrier insulators. In addition to an EL peak near the 1.1-eV Si band gap, we observe broad-spectrum EL that can span the detector-limited range from 0.7 eV to 2.6 eV (1780 nm to 480 nm). The maximum above-band-gap photon energy increases with the forward bias, consistent with hot-carrier recombination in Si. Below-band-gap EL is likely due to (i) hot-electron inter-conductionband radiative transitions in Si and/or (ii) radiative recombination via localized interface states. Light emanates from specific sites with apparent size < 1 µm that appear during high-forward-current electrical stress. The number of sites can be in the hundreds, and is in direct proportion to the stress current, as anticipated for tunnel barrier dielectric breakdown. Current-voltage characteristics can be fit using a model appropriate to localized breakdown sites. Virtually all current is thought to cross the barrier at such sites, with local current densities as high as 10 8 A/cm 2 . We also describe novel devices where tunnelling occurs at predetermined sub-micron sites formed in 18-nm-thick SiO 2 using electron-beam lithography and wet-chemical etching.

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Section: Below-gap El: Hot-electron Radiative Transitions Between Conmentioning

confidence: 99%

Section: Below-gap El: Hot-electron Radiative Transitions Between Conmentioning

confidence: 99%

Light emission in silicon tunnel diodes

et al. 2004

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“…The NSC-MC also allows us to restrict the MC simulation window domain to a small window of the active device region and to neglect most parts of the high particle density areas of the source and drain regions [42]. Fig.…”

Section: Non-self Consistent Simulationsmentioning

confidence: 99%

Investigation of the performance of strained-SiGe vertical IMOS-transistors

Dinh

Kraus

Jungemann

2010

Solid-State Electronics

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“…This is discussed at length elsewhere including our own work where we have worked on strategies to deal with this [22,23]. Others have implemented the frozen-field approach, with the plausible assumption that the details of the distribution arising from nonlocal and hot-electron effects do not significantly influence the electric field [24]. It has previously been demonstrated that differences in electrostatic potential profiles as obtained from self-consistent and nonself-consistent Monte Carlo simulations are negligible.…”

Section: Introductionmentioning

confidence: 96%