2013 14th European Conference on Radiation and Its Effects on Components and Systems (RADECS) 2013
DOI: 10.1109/radecs.2013.6937444
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Coupled theoretical and experimental studies for the radiation hardening of silica-based optical fibers

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Cited by 4 publications
(5 citation statements)
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“…The tested singlemode OFs were produced by iXBlue Photonics Division through the Modified Chemical Vapor Deposition (MCVD) method [16]- [19]. The samples, which are named iXSM-P and iXSM-F, are step-index single-mode OFs with an external cladding diameter of 125 μm.…”
Section: A Tested Optical Fibermentioning
confidence: 99%
“…The tested singlemode OFs were produced by iXBlue Photonics Division through the Modified Chemical Vapor Deposition (MCVD) method [16]- [19]. The samples, which are named iXSM-P and iXSM-F, are step-index single-mode OFs with an external cladding diameter of 125 μm.…”
Section: A Tested Optical Fibermentioning
confidence: 99%
“…I COMPOSITION OF TESTED OPTICAL FIBERS IN WEIGHT% OR CONCENTRATION (SEE TEXT FOR MORE DETAILS) for specific research purposes on radiation vulnerability in the framework of the so-called "canonical approach" [8].…”
Section: A Tested Optical Fibersmentioning
confidence: 99%
“…密度泛函理论(DFT)是用基态电子密度分布代替波函数表示多电子体系的电子结构。 在玻璃辐照损伤研究中,可用来计算玻璃结构和能量等特性 [85][86][87] ,如,Laudernet 等利用 DFT 计算了纯二氧化硅和掺锗二氧化硅中氧空穴的 OA 波段 [88] 。经典的电子结构理论有 Hartree-Fock 方法和后 Hartree-Fock 方法,两种方法均基于波函数描述电子结构。其中,…”
Section: 密度泛函理论(Dft)unclassified
“…Thomas-Fermi 模型(假设电子不受外力,且没有相互作用力) ,发展出 Hohenberg-Kohn 定理 [89] 。定理指出,模拟体系中的所有物理量均为电子密度的泛函,将体系的总能量变分, 得到基态能量。密度泛函理论的实现可通过 Kohn-Sham 方法,该方法的原理是将相互作 用的电子系统简化为在有效场中运动的非相互作用电子系统的问题。 关于密度泛函理论交换 能和关联能,可以通过局域密度近似(LDA)进行求解。 DFT 计算可用于分子类似物模拟。例如,Du 等 [90] 通过 DFT 获得锗掺杂二氧化硅玻璃 中的锗相关缺陷。Girard 等 [86] 使用 DFT 框架下的局部密度近似方法(LDA)模拟了锗掺杂 二氧化硅玻璃中点缺陷的结构和能量特性,Richard 等 [85] 利用投影增广波(GIPAW)方法 计算了 SiE'心的 EPR 超精细耦合和 g 张量。Zatsepin 等 [69][70][71] 通过离子注入将改良元素选 择性嵌入宿主基质的研究中,通过将 XPS 与 DFT 理论结合进行建模分析,模拟计算了锗、 铋注入二氧化硅玻璃中不同原子构型结构的形成能、电子结构等,结果表明锗、铋与 Si、O 形成化学键,并且产生部分嵌入元素相关的缺陷。Strand 等 [91] 利用 CP2K 代码(通过求解 Kohn-Sham 方程,得到分子的基态电子结构)对电荷捕获位点进行计算,此方法还可根据 时间依赖密度泛函理论(TD DFT)计算光学跃迁能,从而用于解释电荷捕获过程的单电子 和双电子。…”
Section: 密度泛函理论(Dft)unclassified